GB1041466A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1041466A
GB1041466A GB19381/63A GB1938163A GB1041466A GB 1041466 A GB1041466 A GB 1041466A GB 19381/63 A GB19381/63 A GB 19381/63A GB 1938163 A GB1938163 A GB 1938163A GB 1041466 A GB1041466 A GB 1041466A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
protective layer
transistors
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19381/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
TDK Micronas GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Micronas GmbH filed Critical TDK Micronas GmbH
Publication of GB1041466A publication Critical patent/GB1041466A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/838—Bonding techniques
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/30105—Capacitance

Abstract

1,041,466. Semi-conductor devices. INTERMETALL GESELLSCHAFT FUR METALLURGIE UND ELEKTRONIK. May 15, 1963 [May 15, 1962], No. 19381/63. Heading H1K. An ohmic contact is made to a P(N)-type zone of a semi-conductor body by alloying to it at a temperature of less than 100‹ C. a material comprising acceptor (donor) impurity and then covering the material with a protective layer of metal or semi-conductor. Suitable acceptor containing materials are gallium and certain alloys of gallium or aluminium with such carrier metals as indium, lead, cadmium, zinc, bismuth and tin while certain alloys of phosphorus or arsenic with these carrier metals are suitable donor materials. Materials suitable for the protective layer are iron, chromium, nickel, palladium, platinum, gold and semi-conductor material, e.g. germanium, of the same conductivity type as the zone. In the embodiment a germanium wafer 3 (Fig. 1) comprising PNP transistors with evaporated emitter and base contacts of aluminium and gold-antimony respectively, is etched to the form shown. stuck to an alumina support 1 with picein and then etched down to line 11 to isolate the transistors. The low melting material and protective layer are then vapour deposited in turn on the collector zones and the transistors separated by dissolving away the picein and mounted in conventional manner.
GB19381/63A 1962-05-15 1963-05-15 Semiconductor devices Expired GB1041466A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ21774A DE1163977B (en) 1962-05-15 1962-05-15 Barrier-free contact on a zone of the semiconductor body of a semiconductor component

Publications (1)

Publication Number Publication Date
GB1041466A true GB1041466A (en) 1966-09-07

Family

ID=7200690

Family Applications (1)

Application Number Title Priority Date Filing Date
GB19381/63A Expired GB1041466A (en) 1962-05-15 1963-05-15 Semiconductor devices

Country Status (2)

Country Link
DE (1) DE1163977B (en)
GB (1) GB1041466A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1280420B (en) * 1964-04-02 1968-10-17 Siemens Ag Method for contacting semiconductor components
DE2042463C2 (en) * 1970-07-31 1982-06-09 General Electric Co., Schenectady, N.Y. External leads joining appliance - for contact areas of semiconductor wafers with aligning, joining, feeding and shifting devices
US3706409A (en) * 1970-02-26 1972-12-19 Gen Electric Semiconductor lead attachment system including a semiconductor pellet orientation plate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE906455C (en) * 1949-02-24 1954-03-15 Wacker Chemie Gmbh Process for the production of AEthylchlorosilanes
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
BE533946A (en) * 1953-12-09
NL190762A (en) * 1954-02-27
US2936256A (en) * 1954-06-01 1960-05-10 Gen Electric Semiconductor devices

Also Published As

Publication number Publication date
DE1163977B (en) 1964-02-27

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