GB986512A - Manufacture of semiconductive materials - Google Patents

Manufacture of semiconductive materials

Info

Publication number
GB986512A
GB986512A GB4740463A GB4740463A GB986512A GB 986512 A GB986512 A GB 986512A GB 4740463 A GB4740463 A GB 4740463A GB 4740463 A GB4740463 A GB 4740463A GB 986512 A GB986512 A GB 986512A
Authority
GB
United Kingdom
Prior art keywords
compound
arsenide
semi
conductor
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4740463A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US248679A external-priority patent/US3239393A/en
Priority claimed from US248308A external-priority patent/US3342618A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB986512A publication Critical patent/GB986512A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/28—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used using thermochromic compounds or layers containing liquid crystals, microcapsules, bleachable dyes or heat- decomposable compounds, e.g. gas- liberating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Dental Preparations (AREA)
GB4740463A 1962-12-31 1963-12-02 Manufacture of semiconductive materials Expired GB986512A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US248679A US3239393A (en) 1962-12-31 1962-12-31 Method for producing semiconductor articles
US248308A US3342618A (en) 1962-12-31 1962-12-31 Thermographic copying material

Publications (1)

Publication Number Publication Date
GB986512A true GB986512A (en) 1965-03-17

Family

ID=26939269

Family Applications (2)

Application Number Title Priority Date Filing Date
GB4740463A Expired GB986512A (en) 1962-12-31 1963-12-02 Manufacture of semiconductive materials
GB4740363A Expired GB1074452A (en) 1962-12-31 1963-12-02 Improvements in or relating to thermographic copying

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB4740363A Expired GB1074452A (en) 1962-12-31 1963-12-02 Improvements in or relating to thermographic copying

Country Status (6)

Country Link
BE (1) BE641995A (de)
CH (1) CH433407A (de)
DE (2) DE1237144B (de)
GB (2) GB986512A (de)
NL (1) NL302498A (de)
SE (1) SE329332B (de)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1077509A (fr) * 1951-04-20 1954-11-09 France Etat Procédé d'homogénéisation et d'activation de cristaux semi-conducteurs et de couches semi-conductrices
NL254846A (de) * 1959-08-29

Also Published As

Publication number Publication date
BE641995A (de) 1964-04-16
GB1074452A (en) 1967-07-05
DE1237144B (de) 1967-03-23
SE329332B (de) 1970-10-05
CH433407A (de) 1967-04-15
DE1285639B (de) 1968-12-19
NL302498A (de)

Similar Documents

Publication Publication Date Title
GB719873A (en) Improvements in or relating to electric semi-conductor devices and processes for their production
NL168892B (nl) Werkwijze voor het onder verminderde druk doen groeien van een epitaxiale dunne laag van een verbinding van het type iii(a) - v(a) van het periodiek systeem der elementen en halfgeleiderinrichting, verkregen onder toepassing van deze werkwijze.
GB916888A (en) Improvements in and relating to the epitaxial deposition of semi-conductor material
GB949799A (en) Process for the production of crystalline semi-conductor material
GB1239044A (de)
GB1012124A (en) Improvements in or relating to semiconductor devices
GB1100780A (en) Improvements in or relating to the diffusion of doping substances into semiconductor crystals
GB1080306A (en) Semiconductor device fabrication
GB1176691A (en) High Resistivity Compounds and Alloys and Methods of Making Same.
GB1199399A (en) Improvements in or relating to the Manufacture of Semiconductors.
GB986512A (en) Manufacture of semiconductive materials
GB989890A (en) Semiconductor device fabrication
GB1186945A (en) Improvements relating to Semiconductor Devices
GB1002528A (en) Manufacture of semiconductive bodies
US3793093A (en) Method for producing a semiconductor device having a very small deviation in lattice constant
GB1108774A (en) Transistors
GB1062398A (en) Process of diffusion into semiconductor body and product thereof
GB1508799A (en) Light emissive semiconductor device
GB903509A (en) Vapour deposition of heavily doped semiconductor material
GB1273188A (en) Improvements in or relating to the production of semiconductor arrangements
KR910015006A (ko) 반-절연성 반도체층을 갖는 반도체 장치의 제조방법
GB1282635A (en) Improvements in or relating to semiconductor devices made of gallium arsenide
US3461004A (en) Method of epitaxially growing layers of semiconducting compounds
GB953034A (en) Improvements in or relating to semiconductor devices
GB1467145A (en) Method of forming a wafer of semiconductor material and the wafer so formed