GB954854A - Improvements in or relating to a process of transistor manufacture - Google Patents
Improvements in or relating to a process of transistor manufactureInfo
- Publication number
- GB954854A GB954854A GB15712/60A GB1571260A GB954854A GB 954854 A GB954854 A GB 954854A GB 15712/60 A GB15712/60 A GB 15712/60A GB 1571260 A GB1571260 A GB 1571260A GB 954854 A GB954854 A GB 954854A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gold
- relating
- silicon
- lifetime
- transistor manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82383959A | 1959-06-30 | 1959-06-30 | |
US211132A US3184347A (en) | 1959-06-30 | 1962-07-19 | Selective control of electron and hole lifetimes in transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
GB954854A true GB954854A (en) | 1964-04-08 |
Family
ID=26905864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB15712/60A Expired GB954854A (en) | 1959-06-30 | 1960-05-04 | Improvements in or relating to a process of transistor manufacture |
Country Status (5)
Country | Link |
---|---|
US (1) | US3184347A (sv) |
CH (1) | CH395342A (sv) |
DE (1) | DE1160543B (sv) |
GB (1) | GB954854A (sv) |
NL (2) | NL252132A (sv) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3307984A (en) * | 1962-12-07 | 1967-03-07 | Trw Semiconductors Inc | Method of forming diode with high resistance substrate |
DE1252809B (de) * | 1962-12-17 | 1967-10-26 | Tektronix, Inc., Beaverton, Oreg. (V. St. A.) | Halbleiterdiode mit einem einkristallinen Halbleiterkörper und mit Rekombinationszentren in der n- und in der p-Zone und Verfahren zum Herstellen |
US3390020A (en) * | 1964-03-17 | 1968-06-25 | Mandelkorn Joseph | Semiconductor material and method of making same |
US3423647A (en) * | 1964-07-30 | 1969-01-21 | Nippon Electric Co | Semiconductor device having regions with preselected different minority carrier lifetimes |
DE1489087B1 (de) * | 1964-10-24 | 1970-09-03 | Licentia Gmbh | Halbleiterbauelement mit verbessertem Frequenzverhalten und Verfahren zum Herstellen |
DE1279202B (de) * | 1965-03-30 | 1968-10-03 | Siemens Ag | Thyristor und Verfahren zu seiner Herstellung |
US3518508A (en) * | 1965-12-10 | 1970-06-30 | Matsushita Electric Ind Co Ltd | Transducer |
US3445736A (en) * | 1966-10-24 | 1969-05-20 | Transitron Electronic Corp | Semiconductor device doped with gold just to the point of no excess and method of making |
US3464868A (en) * | 1967-01-13 | 1969-09-02 | Bell Telephone Labor Inc | Method of enhancing transistor switching characteristics |
US3905836A (en) * | 1968-04-03 | 1975-09-16 | Telefunken Patent | Photoelectric semiconductor devices |
US3886379A (en) * | 1972-12-13 | 1975-05-27 | Motorola Inc | Radiation triggered disconnect means |
DE2341311C3 (de) * | 1973-08-16 | 1981-07-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern |
US4177477A (en) * | 1974-03-11 | 1979-12-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor switching device |
JPS5370679A (en) * | 1976-12-06 | 1978-06-23 | Nippon Gakki Seizo Kk | Transistor |
US4140560A (en) * | 1977-06-20 | 1979-02-20 | International Rectifier Corporation | Process for manufacture of fast recovery diodes |
KR930003555B1 (ko) * | 1988-12-16 | 1993-05-06 | 산켄 덴끼 가부시끼가이샤 | 반도체 장치의 제조방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2860218A (en) * | 1954-02-04 | 1958-11-11 | Gen Electric | Germanium current controlling devices |
US3010857A (en) * | 1954-03-01 | 1961-11-28 | Rca Corp | Semi-conductor devices and methods of making same |
US2829993A (en) * | 1955-06-24 | 1958-04-08 | Hughes Aircraft Co | Process for making fused junction semiconductor devices with alkali metalgallium alloy |
DK91082C (da) * | 1955-11-01 | 1961-06-12 | Philips Nv | Halvlederorgan, f. eks. krystaldiode eller transistor, samt fremgangsmåder til fremstilling af et sådant organ. |
US2962394A (en) * | 1957-06-20 | 1960-11-29 | Motorola Inc | Process for plating a silicon base semiconductive unit with nickel |
BE580254A (sv) * | 1958-07-17 | |||
NL241982A (sv) * | 1958-08-13 | 1900-01-01 | ||
US2965519A (en) * | 1958-11-06 | 1960-12-20 | Bell Telephone Labor Inc | Method of making improved contacts to semiconductors |
US3063879A (en) * | 1959-02-26 | 1962-11-13 | Westinghouse Electric Corp | Configuration for semiconductor devices |
US3013955A (en) * | 1959-04-29 | 1961-12-19 | Fairchild Camera Instr Co | Method of transistor manufacture |
US3041214A (en) * | 1959-09-25 | 1962-06-26 | Clevite Corp | Method of forming junction semiconductive devices having thin layers |
-
0
- NL NL122120D patent/NL122120C/xx active
- NL NL252132D patent/NL252132A/xx unknown
-
1960
- 1960-05-04 GB GB15712/60A patent/GB954854A/en not_active Expired
- 1960-06-07 CH CH645360A patent/CH395342A/de unknown
- 1960-06-27 DE DEF31524A patent/DE1160543B/de active Pending
-
1962
- 1962-07-19 US US211132A patent/US3184347A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1160543B (de) | 1964-01-02 |
NL122120C (sv) | |
US3184347A (en) | 1965-05-18 |
CH395342A (de) | 1965-07-15 |
NL252132A (sv) |
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