GB944943A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB944943A GB944943A GB2027/60A GB202760A GB944943A GB 944943 A GB944943 A GB 944943A GB 2027/60 A GB2027/60 A GB 2027/60A GB 202760 A GB202760 A GB 202760A GB 944943 A GB944943 A GB 944943A
- Authority
- GB
- United Kingdom
- Prior art keywords
- glass
- ceramic
- sealed
- parts
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000011521 glass Substances 0.000 abstract 7
- 239000000919 ceramic Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000005995 Aluminium silicate Substances 0.000 abstract 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 235000012211 aluminium silicate Nutrition 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910002091 carbon monoxide Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000833 kovar Inorganic materials 0.000 abstract 1
- 239000001095 magnesium carbonate Substances 0.000 abstract 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 abstract 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 abstract 1
- 235000014380 magnesium carbonate Nutrition 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000454 talc Substances 0.000 abstract 1
- 229910052623 talc Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Micromachines (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US791934A US3059158A (en) | 1959-02-09 | 1959-02-09 | Protected semiconductor device and method of making it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB944943A true GB944943A (en) | 1963-12-18 |
Family
ID=25155270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2027/60A Expired GB944943A (en) | 1959-02-09 | 1960-01-20 | Improvements in or relating to semiconductor devices |
Country Status (6)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109467386A (zh) * | 2018-01-15 | 2019-03-15 | 杭州创屹机电科技有限公司 | 一种快速固化的3d打印陶瓷浆料及打印方法 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3435516A (en) * | 1959-05-06 | 1969-04-01 | Texas Instruments Inc | Semiconductor structure fabrication |
| NL125803C (US06818201-20041116-C00086.png) * | 1961-01-16 | |||
| FR1319150A (fr) * | 1961-04-05 | 1963-02-22 | Gen Electric | Perfectionnements aux dispositifs à semi-conducteurs |
| US3202888A (en) * | 1962-02-09 | 1965-08-24 | Hughes Aircraft Co | Micro-miniature semiconductor devices |
| US3213337A (en) * | 1962-10-02 | 1965-10-19 | Whittaker Corp | Composite ceramic body and method of forming the same |
| US3217088A (en) * | 1962-11-30 | 1965-11-09 | Owens Illinois Glass Co | Joining glass members and encapsulation of small electrical components |
| US3268374A (en) * | 1963-04-24 | 1966-08-23 | Texas Instruments Inc | Method of producing a field-effect transistor |
| GB1027737A (en) * | 1963-05-14 | 1966-04-27 | Nat Res Dev | Semiconductor diode construction |
| DE1230918B (de) * | 1964-05-08 | 1966-12-22 | Telefunken Patent | Halbleiteranordnung |
| US3514346A (en) * | 1965-08-02 | 1970-05-26 | Gen Electric | Semiconductive devices having asymmetrically conductive junction |
| GB1134998A (en) * | 1967-04-04 | 1968-11-27 | Marconi Co Ltd | Improvements in or relating to insulated gate field effect transistors |
| US3648121A (en) * | 1967-09-06 | 1972-03-07 | Tokyo Shibaura Electric Co | A laminated semiconductor structure |
| US3735208A (en) * | 1971-08-26 | 1973-05-22 | Rca Corp | Thermal fatigue lead-soldered semiconductor device |
| US3715636A (en) * | 1972-01-03 | 1973-02-06 | Gen Electric | Silicon carbide lamp mounted on a ceramic of poor thermal conductivity |
| JPS49135749U (US06818201-20041116-C00086.png) * | 1973-03-24 | 1974-11-21 | ||
| US4262165A (en) * | 1976-03-26 | 1981-04-14 | Hitachi, Ltd. | Packaging structure for semiconductor IC chip |
| JPS52116074A (en) * | 1976-03-26 | 1977-09-29 | Hitachi Ltd | Electronic part |
| CA2106981A1 (en) * | 1992-01-27 | 1993-07-28 | Victor Albert Keith Temple | Semiconductor devices and methods of mass production thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2874340A (en) * | 1953-06-26 | 1959-02-17 | Sprague Electric Co | Rectifying contact |
| US2792539A (en) * | 1953-07-07 | 1957-05-14 | Sprague Electric Co | Transistor construction |
| US2736847A (en) * | 1954-05-10 | 1956-02-28 | Hughes Aircraft Co | Fused-junction silicon diodes |
| AT193945B (de) * | 1955-06-28 | 1957-12-10 | Western Electric Co | Verfahren zur Änderung der spezifischen Leitfähigkeit eines Halbleitermaterials |
| BE550947A (US06818201-20041116-C00086.png) * | 1955-09-12 | |||
| NL213425A (US06818201-20041116-C00086.png) * | 1956-01-03 | |||
| NL217849A (US06818201-20041116-C00086.png) * | 1956-06-12 | |||
| US2959718A (en) * | 1957-04-08 | 1960-11-08 | Int Rectifier Corp | Rectifier assembly |
| DE1047949B (de) * | 1957-06-24 | 1958-12-31 | Siemens Ag | Insbesondere auf Strahlung ansprechende Halbleiterkristallanordnung mit p-n-UEbergang und den p-n-UEbergang gegen Feuchtigkeit schuetzender Huelle |
| US2946935A (en) * | 1958-10-27 | 1960-07-26 | Sarkes Tarzian | Diode |
-
0
- BE BE584431D patent/BE584431A/xx unknown
- NL NL244815D patent/NL244815A/xx unknown
-
1959
- 1959-02-09 US US791934A patent/US3059158A/en not_active Expired - Lifetime
-
1960
- 1960-01-19 DE DEW27087A patent/DE1212220B/de active Pending
- 1960-01-20 GB GB2027/60A patent/GB944943A/en not_active Expired
- 1960-02-03 FR FR817501A patent/FR1247196A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109467386A (zh) * | 2018-01-15 | 2019-03-15 | 杭州创屹机电科技有限公司 | 一种快速固化的3d打印陶瓷浆料及打印方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| BE584431A (US06818201-20041116-C00086.png) | |
| FR1247196A (fr) | 1960-11-25 |
| DE1212220B (de) | 1966-03-10 |
| NL244815A (US06818201-20041116-C00086.png) | |
| US3059158A (en) | 1962-10-16 |
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