GB931109A - Improvements in or relating to methods of producing semi-conductor components - Google Patents

Improvements in or relating to methods of producing semi-conductor components

Info

Publication number
GB931109A
GB931109A GB2953760A GB2953760A GB931109A GB 931109 A GB931109 A GB 931109A GB 2953760 A GB2953760 A GB 2953760A GB 2953760 A GB2953760 A GB 2953760A GB 931109 A GB931109 A GB 931109A
Authority
GB
United Kingdom
Prior art keywords
semi
components
conductor
electrodes
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2953760A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB931109A publication Critical patent/GB931109A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Dicing (AREA)

Abstract

931,109. Semi-conductor devices. SIEMENS & HALSKE A.G. Aug. 26, 1960 [Aug. 26, 1959], No. 29537/60. Class 37. A plurality of semi-conductor components are produced by alloying a number of longitudinally extending electrodes into a semiconductor body and dividing the arrangement into components each containing a part of the body and of each electrode, by dividing in a plane perpendicular to the longitudinal extent of the electrodes. Fig. 1 shows a transistor comprising a semi-conductor body 4 with alloyed emitter 3 and collector 5 electrodes and base electrode 2. This assembly may be embedded in a rigid mass of supporting material and then sliced into sections to provide a plurality of transistors. The device may be dimensioned so that it is suitable for incorporating into a printed circuit, and may be built into a sealed housing with other components.
GB2953760A 1959-08-26 1960-08-26 Improvements in or relating to methods of producing semi-conductor components Expired GB931109A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES64588A DE1099648B (en) 1959-08-26 1959-08-26 Process for making semiconductor devices with multiple electrodes, e.g. of transistors

Publications (1)

Publication Number Publication Date
GB931109A true GB931109A (en) 1963-07-10

Family

ID=7497305

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2953760A Expired GB931109A (en) 1959-08-26 1960-08-26 Improvements in or relating to methods of producing semi-conductor components

Country Status (5)

Country Link
BE (1) BE594177A (en)
CH (1) CH379000A (en)
DE (1) DE1099648B (en)
GB (1) GB931109A (en)
NL (1) NL255158A (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE702235C (en) * 1938-02-04 1941-02-03 Philips Patentverwaltung Process for the production of electrode systems consisting of layers and having the same properties, in particular dry rectifiers, which are to be interconnected to form groups
CH209915A (en) * 1938-05-07 1940-05-15 Hermes Patentverwertungs Gmbh Process for the manufacture of selenium rectifiers.
NL203694A (en) * 1955-04-04 1900-01-01

Also Published As

Publication number Publication date
CH379000A (en) 1964-06-30
NL255158A (en)
DE1099648B (en) 1961-02-16
BE594177A (en) 1960-12-16

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