DE1099648B - Process for making semiconductor devices with multiple electrodes, e.g. of transistors - Google Patents

Description

GERMAN

The invention relates to a method of manufacture of semiconductor devices with multiple electrodes, e.g. B. of transistors.

An important development trend in semiconductor devices is toward miniaturization all mechanical dimensions. This reduction is for the use of the components in small devices interesting and also with transistors with a high cutoff frequency. In doing so, the manufacturing technology These components have very high requirements with regard to the precision of the used Tools and manufacturing equipment provided.

The invention is based on the object, the necessary smallness of the components with the help of simple to achieve manufacturable tools and devices.

In such a method for producing semiconductor arrangements, according to the invention, first an output system extending in a straight line in one direction with the desired number of electrodes is produced, and then the output system is cut through at least one cut through all electrodes, say perpendicular to the longitudinal direction of the output system, divided into several finished semiconductor arrangements.

So it becomes the more easily feasible manufacture of semiconductor arrangements of the smallest in terms of manufacturing technology Dimensions, e.g. B. of transistor systems, achieved in that the desired miniature semiconductor devices be made by mechanical division of larger semiconductor arrays.

A method for producing semiconductor arrangements is already known in which, on the one hand, Side of an initially thick semiconductor wafer one or more semiconductor parts from the opposite Conductivity type are applied and a supporting thick semiconductor body made of the same semiconductor material is melted on the same side of the semiconductor wafer and the semiconductor wafer on the other side is reduced by machining to a smaller thickness. After editing, from this side a further semiconductor part of the opposite conductivity type is attached. The so Manufactured transistors are then separated from one another by cuts. But the cut runs only through the base zone of the transistor and does not split the individual electrodes. The benefit that only Very difficult to manufacture electrodes with the smallest dimensions by dividing an easy to manufacture Manufacturing a large electrode is therefore not possible with this method.

In a further known method for producing electrode systems consisting of layers, such as B. of selenium rectifiers, the individual elec-

of semiconductor arrangements

with several electrodes,

e.g. of transistors

Applicant:
ίο Siemens & Halske Aktiengesellschaft,

Berlin and Munich,
Munich 2, Witteisbacherplatz 2

Dr. Karl Siebertz, Munich-Obermenzing,
and Dr. Ludwig Graßl, Munich,
have been named as inventors

trode systems cut out of the main disc along a circle or a circular arc, the is concentric to the center of rotation of the main pulley. The electrode systems are thus punched out made from a larger disc. The parts of the larger ones that remain after punching out Slice form a far larger waste than it would be by simply dividing one in one direction extending exit system through a section which runs perpendicular to this longitudinal direction, accrues.

A more detailed explanation of the invention is given in the following by the description of an exemplary embodiment, namely the idea of the invention explained in more detail on a transistor system shown in FIG. 1.

The transistor system is known in appropriately large and thus easily manageable dimensions Way, e.g. B. manufactured by the so-called alloy process. In the case of the one shown in FIG Transistor 4 is the semiconductor body in which the individual electrodes, i.e. 3 and 5, act as emitter and collector electrode and 2 are alloyed as the base electrode.

This output system is made so that it extends approximately in a straight line in one direction and by one or more cuts running approximately perpendicular to this direction in several miniature semiconductor components is divided. In the transistor shown in the exemplary embodiment the connections required for making contact with the individual electrodes are extensive in a first approximation

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formed parallel to the main axis of the overall system. The miniature systems arise from the larger one Output system by separating more or less thin slices from the output system. The disks z. B. with a sawing device or by other Sehneidverfahren, such. B. electrical corrosion, severed. Such a cutting line has been drawn in dashed lines in FIG. 1.

When using a mechanical cutting process, it is special for mechanical production favorable if the initial system is prior to cutting is embedded in a mass serving as a support material, in particular in a plastic.

This material can before the further treatment of the separated miniature semiconductor component by suitable Solvent can be removed again. By appropriately dimensioning the electrode connections After this manufacturing process, a fully contacted system is obtained on the output system, which with its connections can be soldered or welded directly into a housing provided for this purpose can. Such a system, as shown as an exemplary embodiment in FIG. 3, also has the Advantage that the capacities of the electrode leads are reduced to a minimum.

But it is also possible that the semiconductor arrangement cut off from the starting system and shown in FIG is processed further with the support material, e.g. the plastic. It is e.g. the installation in printed circuits possible. For this purpose, the semiconductor device, e.g. B. the transistor, shaped according to the standard dimensions specified for such printed circuits.

The one produced by the method according to the invention Semiconductor arrangement, in particular the transistorsy star, can also after etching and covering of the cutting surfaces are built into a housing which, in addition to the transistor system, also has components the printed circuit. So it can be the transistor system with other components, so z. B. resistors and diodes can be installed together in a vacuum-tight housing.

Claims (4)

Patent claims: 1. A method of manufacturing semiconductor devices having a plurality of electrodes, e.g. B. from Transistors, characterized in that initially an output system extending in a straight line in one direction is produced with the desired number of electrodes and that the output system then by at least one cut running through all electrodes, approximately perpendicular to the longitudinal direction of the initial system, is divided into several finished semiconductor arrangements. 2. The method according to claim 1, characterized in that the starting system prior to cutting is embedded in a mass, in particular in plastic. 3. The method according to claim 2, characterized in that the embedding material is cut off from the Semiconductor assemblies is not removed. 4. The method according to any one of claims 1 to 3, characterized in that the cut surfaces are etched and be covered. Considered publications:
German Patent No. 702 235;
German interpretative document No. 1 036 391;
Swiss Patent No. 209 915. 1 sheet of drawings © 109 510/349 2.61