GB930220A - Improvements in or relating to methods of forming silica coatings on refractory substrates - Google Patents

Improvements in or relating to methods of forming silica coatings on refractory substrates

Info

Publication number
GB930220A
GB930220A GB17420/61A GB1742061A GB930220A GB 930220 A GB930220 A GB 930220A GB 17420/61 A GB17420/61 A GB 17420/61A GB 1742061 A GB1742061 A GB 1742061A GB 930220 A GB930220 A GB 930220A
Authority
GB
United Kingdom
Prior art keywords
substrate
coating
silica
silicon
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17420/61A
Inventor
Armenag Garabed Nassibian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB17420/61A priority Critical patent/GB930220A/en
Publication of GB930220A publication Critical patent/GB930220A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/584—Non-reactive treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/085—Vapour deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

Abstract

A silica coating is formed on a refractory substrate by thermal evaporation in vacuo, and then the coated substrate is heat-treated at not less than 1000 DEG C. to render the coating substantially non-porous and to improve the adhesion of the silica coating to the substrate. The substrate is of silicon but may be metallic. The silicon substrate is maintained at about 1000 DEG C. during coating by being supported on a horizontal strip or sheet of tungsten functioning as a heated electrical resistor. Silica is evaporated from a short rod held above the substrate and heated to 1800 DEG C. by electron bombardment. A suitable mask may be used and the exposed parts coated with silica of about 2 microns thickness. After coating the silicon body is heat treated in dry nitrogen at 1200 DEG C. for 30 minutes and then slowly cooled to room temperature. Alternatively, an atmosphere of dry oxygen may be used and the superficial oxidation of the previously masked areas removed by immersion in 40% hydrofluoric acid. Specification 909,503 is referred to.
GB17420/61A 1961-05-12 1961-05-12 Improvements in or relating to methods of forming silica coatings on refractory substrates Expired GB930220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB17420/61A GB930220A (en) 1961-05-12 1961-05-12 Improvements in or relating to methods of forming silica coatings on refractory substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB17420/61A GB930220A (en) 1961-05-12 1961-05-12 Improvements in or relating to methods of forming silica coatings on refractory substrates

Publications (1)

Publication Number Publication Date
GB930220A true GB930220A (en) 1963-07-03

Family

ID=10094894

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17420/61A Expired GB930220A (en) 1961-05-12 1961-05-12 Improvements in or relating to methods of forming silica coatings on refractory substrates

Country Status (1)

Country Link
GB (1) GB930220A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002386A1 (en) * 1984-10-09 1986-04-24 Centre National De La Recherche Scientifique Method for forming by low pressure deposition a layer of insulating material on a substrate, and product obtained thereby

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002386A1 (en) * 1984-10-09 1986-04-24 Centre National De La Recherche Scientifique Method for forming by low pressure deposition a layer of insulating material on a substrate, and product obtained thereby
FR2575766A1 (en) * 1984-10-09 1986-07-11 Centre Nat Rech Scient METHOD OF FORMING, UNDER LOW PRESSURE, AN INSULATING LAYER OF ELECTRONIC QUALITY ON A SUBSTRATE

Similar Documents

Publication Publication Date Title
GB944571A (en) Improvements in or relating to glass-ceramics and their production and to devices comprising glass-ceramics
SE7612832L (en) PROCEDURE FOR COATING A SUBSTRATE WITH A LAYER OF AN OXIDE OF AT LEAST ONE METAL
GB1363362A (en) Process for the production of a coloured lustre coating on the surface of an object
GB930220A (en) Improvements in or relating to methods of forming silica coatings on refractory substrates
GB923768A (en) Improvements in and relating to coating
GB800441A (en) Improvements in or relating to methods of coating a support with a lead sulphide layer
US3499782A (en) Substrate protective oxidized coating process
US4126713A (en) Forming films on semiconductor surfaces with metal-silica solution
GB902572A (en) Improvements in photoconductive devices and their methods of manufacture
DE69501386D1 (en) Hot-dip coating process without alloying a steel plate with a low content of interstitial atoms
GB875344A (en) Improvements in high strength aluminium coated steel
NO128401B (en)
GB908323A (en) Improvements in or relating to the fabrication of wire helices
GB1056355A (en) Process for coating ferrous material and material coated by such process
JPS562636A (en) Inactivation method of surface of semiconductor
GB1433185A (en) Process for treating surfaces of a perforated mask
GB662333A (en) Improvements in or relating to the surface treatment of metal articles
SU116712A1 (en) The method of imparting heat resistance and corrosion resistance to aluminum coatings on coking parts
GB1008014A (en) Method to heat metals for evaporation purposes and/or for diffusion
SU392162A1 (en) METHOD OF OBTAINING COATINGS
JPS5589475A (en) Protective film-covered body and its manufacture
GB854992A (en) Method of coating heater wires
GB984991A (en) Method of making sheet steel coated with tin alloy
GB881792A (en) Improvements in or relating to coating steel with aluminium
JPS5514883A (en) Preventing method for oxidation evaporation of platinum group metal material