GB928562A - Methods of varying carrier mobility in semiconductive bodies - Google Patents

Methods of varying carrier mobility in semiconductive bodies

Info

Publication number
GB928562A
GB928562A GB25221/61A GB2522161A GB928562A GB 928562 A GB928562 A GB 928562A GB 25221/61 A GB25221/61 A GB 25221/61A GB 2522161 A GB2522161 A GB 2522161A GB 928562 A GB928562 A GB 928562A
Authority
GB
United Kingdom
Prior art keywords
type
strain
wafer
mesa
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25221/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB928562A publication Critical patent/GB928562A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Die Bonding (AREA)
GB25221/61A 1960-07-18 1961-07-12 Methods of varying carrier mobility in semiconductive bodies Expired GB928562A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4349460A 1960-07-18 1960-07-18

Publications (1)

Publication Number Publication Date
GB928562A true GB928562A (en) 1963-06-12

Family

ID=21927441

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25221/61A Expired GB928562A (en) 1960-07-18 1961-07-12 Methods of varying carrier mobility in semiconductive bodies

Country Status (4)

Country Link
BE (1) BE606275A (https=)
DE (1) DE1232270B (https=)
GB (1) GB928562A (https=)
NL (1) NL267220A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075374A1 (en) * 1981-09-23 1983-03-30 Budapesti Radiotechnikai Gyar Ground-plane antenna
WO2002045156A3 (en) * 2000-11-29 2003-01-23 Intel Corp Cmos fabrication process utilizing special transistor orientation
CN100452321C (zh) * 2004-07-20 2009-01-14 国际商业机器公司 提高双极器件中电荷载流子迁移率的方法以及双极器件
US7888710B2 (en) 2000-11-29 2011-02-15 Intel Corporation CMOS fabrication process utilizing special transistor orientation
CN112968067A (zh) * 2021-02-25 2021-06-15 电子科技大学 一种基于Bi掺杂硫锑银的无机薄膜太阳能电池及其制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008008931B3 (de) * 2008-02-13 2009-07-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Schalten von elektrischen Signalen und Leistungen

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075374A1 (en) * 1981-09-23 1983-03-30 Budapesti Radiotechnikai Gyar Ground-plane antenna
WO2002045156A3 (en) * 2000-11-29 2003-01-23 Intel Corp Cmos fabrication process utilizing special transistor orientation
US7312485B2 (en) 2000-11-29 2007-12-25 Intel Corporation CMOS fabrication process utilizing special transistor orientation
US7888710B2 (en) 2000-11-29 2011-02-15 Intel Corporation CMOS fabrication process utilizing special transistor orientation
CN100452321C (zh) * 2004-07-20 2009-01-14 国际商业机器公司 提高双极器件中电荷载流子迁移率的方法以及双极器件
CN112968067A (zh) * 2021-02-25 2021-06-15 电子科技大学 一种基于Bi掺杂硫锑银的无机薄膜太阳能电池及其制备方法

Also Published As

Publication number Publication date
DE1232270B (de) 1967-01-12
NL267220A (https=)
BE606275A (https=)

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