GB926807A - Methods of forming silicon and silicon formed by the method - Google Patents

Methods of forming silicon and silicon formed by the method

Info

Publication number
GB926807A
GB926807A GB1517/61A GB151761A GB926807A GB 926807 A GB926807 A GB 926807A GB 1517/61 A GB1517/61 A GB 1517/61A GB 151761 A GB151761 A GB 151761A GB 926807 A GB926807 A GB 926807A
Authority
GB
United Kingdom
Prior art keywords
silicon
hydrogen
reaction
hydrogen halide
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1517/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES66651A external-priority patent/DE1124028B/de
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB926807A publication Critical patent/GB926807A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB1517/61A 1960-01-15 1961-01-13 Methods of forming silicon and silicon formed by the method Expired GB926807A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66651A DE1124028B (de) 1960-01-15 1960-01-15 Verfahren zum Herstellen von einkristallinem Silicium

Publications (1)

Publication Number Publication Date
GB926807A true GB926807A (en) 1963-05-22

Family

ID=7498973

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1517/61A Expired GB926807A (en) 1960-01-15 1961-01-13 Methods of forming silicon and silicon formed by the method
GB31276/63A Expired GB1016578A (en) 1960-01-15 1963-08-08 Improvements in or relating to processes for the production of high purity monocrystalline silicon

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB31276/63A Expired GB1016578A (en) 1960-01-15 1963-08-08 Improvements in or relating to processes for the production of high purity monocrystalline silicon

Country Status (4)

Country Link
US (1) US3239372A (enrdf_load_stackoverflow)
CH (1) CH426742A (enrdf_load_stackoverflow)
GB (2) GB926807A (enrdf_load_stackoverflow)
NL (3) NL131048C (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
DE1444526B2 (de) * 1962-08-24 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Verfahren zum Abscheiden eines halb leitenden Elements
US3862020A (en) * 1970-12-07 1975-01-21 Dow Corning Production method for polycrystalline semiconductor bodies
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
IN157312B (enrdf_load_stackoverflow) * 1982-01-12 1986-03-01 Rca Corp
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
US4592792A (en) * 1985-01-23 1986-06-03 Rca Corporation Method for forming uniformly thick selective epitaxial silicon
JP2651146B2 (ja) * 1987-03-02 1997-09-10 キヤノン株式会社 結晶の製造方法
ES2331283B1 (es) * 2008-06-25 2010-10-05 Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) Reactor de deposito de silicio de gran pureza para aplicaciones fotovoltaicas.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1025845B (de) * 1955-07-29 1958-03-13 Wacker Chemie Gmbh Verfahren zur Herstellung von reinstem Silicium
BE554836A (enrdf_load_stackoverflow) * 1956-02-11

Also Published As

Publication number Publication date
NL260072A (enrdf_load_stackoverflow)
NL271203A (enrdf_load_stackoverflow)
GB1016578A (en) 1966-01-12
NL131048C (enrdf_load_stackoverflow)
US3239372A (en) 1966-03-08
CH426742A (de) 1966-12-31

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