GB967185A - Method of producing specified ó¾í¬v compounds - Google Patents

Method of producing specified ó¾í¬v compounds

Info

Publication number
GB967185A
GB967185A GB42709/60A GB4270960A GB967185A GB 967185 A GB967185 A GB 967185A GB 42709/60 A GB42709/60 A GB 42709/60A GB 4270960 A GB4270960 A GB 4270960A GB 967185 A GB967185 A GB 967185A
Authority
GB
United Kingdom
Prior art keywords
hydrogen
gallium
mixture
chlorides
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB42709/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB967185A publication Critical patent/GB967185A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • A—HUMAN NECESSITIES
    • A21—BAKING; EDIBLE DOUGHS
    • A21D—TREATMENT, e.g. PRESERVATION, OF FLOUR OR DOUGH, e.g. BY ADDITION OF MATERIALS; BAKING; BAKERY PRODUCTS; PRESERVATION THEREOF
    • A21D2/00—Treatment of flour or dough by adding materials thereto before or during baking
    • A21D2/08—Treatment of flour or dough by adding materials thereto before or during baking by adding organic substances
    • A21D2/14—Organic oxygen compounds
    • A21D2/16—Fatty acid esters
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Food Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)

Abstract

A compound of an element of Group IIIB and one of Groups VB of the Mendel<\>aeff Periodic Table is produced by heating a mixture of the chlorides of the elements concerned in the vapour phase with hydrogen at a temperature sufficiently high that the hydrogen reacts with the halides and then passing the vapour phase mixture into contact with a condensing surface at a temperature sufficiently low that the compound is deposited, and removing the remaining hydrogen, gaseous unreacted chlorides and hydrogen chloride. The chlorides may be gallium trichloride and arsenic trichloride and the reaction temperature above 900 DEG C., the condensing surface being at 200 DEG to 900 DEG C. The arsenic trichloride may be present in stoichiometric excess and the volume ratio of hydrogen to the mixture of gallium and arsenic trichlorides may be better than 1.75 : 1. Alternatively, an arsenic trichloride/hydrogen gaseous mixture may be passed over liquid gallium at above 900 DEG C. wherein a chloride of gallium is produced which then reacts as above. Other compounds mentioned as being produced are aluminium phosphide, aluminium arsenide and gallium phosphide. Reference has been directed by the Comptroller to Specification 944,872.
GB42709/60A 1959-12-11 1960-12-12 Method of producing specified ó¾í¬v compounds Expired GB967185A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US859060A US3094388A (en) 1959-12-11 1959-12-11 Method of producing gallium or aluminum arsenides and phosphides

Publications (1)

Publication Number Publication Date
GB967185A true GB967185A (en) 1964-08-19

Family

ID=25329906

Family Applications (1)

Application Number Title Priority Date Filing Date
GB42709/60A Expired GB967185A (en) 1959-12-11 1960-12-12 Method of producing specified ó¾í¬v compounds

Country Status (3)

Country Link
US (1) US3094388A (en)
GB (1) GB967185A (en)
NL (2) NL121550C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501908A2 (en) * 1981-03-11 1982-09-17 Labo Electronique Physique Depositing monocrystalline gallium arsenide on substrate - by vapour phase epitaxy at below atmospheric pressure

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE620887A (en) * 1959-06-18
NL275516A (en) * 1961-03-02
FR1335282A (en) * 1961-08-30 1963-08-16 Gen Electric Semiconductor compounds, processes for preparing and depositing them, and semiconductor devices thus obtained
NL286890A (en) * 1962-03-29
US3310425A (en) * 1963-06-28 1967-03-21 Rca Corp Method of depositing epitaxial layers of gallium arsenide
GB1057035A (en) * 1963-08-26 1967-02-01 Standard Telephones Cables Ltd Manufacture of aluminium compounds
US3361530A (en) * 1966-12-09 1968-01-02 Texas Instruments Inc Process for purifying gallium arsenide
GB1437190A (en) * 1973-03-15 1976-05-26 Secr Defence Preparation of iii-v materials
CN107902695A (en) * 2017-11-21 2018-04-13 红河砷业有限责任公司 A kind of method for efficiently preparing high-purity aluminium arsenide

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2313410A (en) * 1939-03-31 1943-03-09 Bell Telephone Labor Inc Preparation of boron compositions
DE970420C (en) * 1951-03-10 1958-09-18 Siemens Ag Semiconductor electrical equipment
NL103088C (en) * 1957-06-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501908A2 (en) * 1981-03-11 1982-09-17 Labo Electronique Physique Depositing monocrystalline gallium arsenide on substrate - by vapour phase epitaxy at below atmospheric pressure

Also Published As

Publication number Publication date
US3094388A (en) 1963-06-18
NL258863A (en)
NL121550C (en)

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