GB922601A - A method of electrolytically etching a semi-conductor device - Google Patents

A method of electrolytically etching a semi-conductor device

Info

Publication number
GB922601A
GB922601A GB2035460A GB2035460A GB922601A GB 922601 A GB922601 A GB 922601A GB 2035460 A GB2035460 A GB 2035460A GB 2035460 A GB2035460 A GB 2035460A GB 922601 A GB922601 A GB 922601A
Authority
GB
United Kingdom
Prior art keywords
electrode
gold
electrolyte
junctions
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2035460A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB922601A publication Critical patent/GB922601A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/12Etching of semiconducting materials
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/16Polishing
    • C25F3/30Polishing of semiconducting materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cell Electrode Carriers And Collectors (AREA)

Abstract

922,601. Transistors. SIEMENS-SCHUCKERTWERKE A.G. June 9, 1960 [June 9, 1959], No. 20354/60. Class 37. A semi-conductor device having two oppositely directed PN junctions is electrolytically etched by covering part but not all of the surface of the device with electrolyte, and connecting the positive terminal of a D.C. source to a P-conductive part of the device and the negative terminal to an electrode within the electrolyte. Emitter, collector and base electrodes (8, 9 and 3 and 4 respectively) are formed on a P-conductive silicon disc 2 by alloying gold-antimony and gold-boron alloys thereto, producing two oppositely directed PN junctions on the disc. Collector electrode 9 is then connected to a molybdenum disc 11 which is then soldered in a recess in the lower part 12 of the transistor housing. Two inverted U-shaped connecting bridges 13, 14 of gold or gold-plated silver strip are then alloyed to electrodes 3 and 4 and 8 respectively. A hollow cylindrical member 15 e.g. of polytetrafluorethylene is then releasably attached to the outer regions of the upper face of the transistor using silicon grease or paste. An electrolyte such as 4% hydrofluoric acid is then introduced into the cavity formed within member 15 and a platinum electrode 16 connected to the negative terminal of a D.C. source is dipped into the electrolyte close to the surface to be etched. Electrode 16 may be in the shape of an inverted U or, if etching is carried out before connecting bridges 13, 14 are added may be in the form of a ring or two half rings. A platinum wire 17 connects the transistor base electrode, i.e. the P-conductive region, to the positive battery terminal. The lead-in wires for the electrodes are protected by lacquering. After etching the emitter junctions member 15 is removed, the collector junction is chemically etched in known manner, and the housing is sealed. The polarizing voltage during the etching process is maintained below the value at which polishing of the semiconductor body takes place.
GB2035460A 1959-06-09 1960-06-09 A method of electrolytically etching a semi-conductor device Expired GB922601A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES63369A DE1184019B (en) 1959-06-09 1959-06-09 Device for electrolytic etching of a semiconductor component with an essentially monocrystalline semiconductor body

Publications (1)

Publication Number Publication Date
GB922601A true GB922601A (en) 1963-04-03

Family

ID=7496333

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2035460A Expired GB922601A (en) 1959-06-09 1960-06-09 A method of electrolytically etching a semi-conductor device

Country Status (2)

Country Link
DE (1) DE1184019B (en)
GB (1) GB922601A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111020686A (en) * 2019-12-12 2020-04-17 湖南文理学院 Preparation method of nano porous silicon convex lens group

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE823763C (en) * 1949-09-15 1951-12-06 Siemens Ag Process for electrolytic polishing of the surface of semiconductor crystals
DE823470C (en) * 1950-09-12 1951-12-03 Siemens Ag Method for etching a semiconductor
DE1040134B (en) * 1956-10-25 1958-10-02 Siemens Ag Process for the production of semiconductor arrangements with semiconductor bodies with a p-n transition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111020686A (en) * 2019-12-12 2020-04-17 湖南文理学院 Preparation method of nano porous silicon convex lens group

Also Published As

Publication number Publication date
DE1184019B (en) 1964-12-23

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