GB922601A - A method of electrolytically etching a semi-conductor device - Google Patents
A method of electrolytically etching a semi-conductor deviceInfo
- Publication number
- GB922601A GB922601A GB2035460A GB2035460A GB922601A GB 922601 A GB922601 A GB 922601A GB 2035460 A GB2035460 A GB 2035460A GB 2035460 A GB2035460 A GB 2035460A GB 922601 A GB922601 A GB 922601A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- gold
- electrolyte
- junctions
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000003792 electrolyte Substances 0.000 abstract 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910000521 B alloy Inorganic materials 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 239000004519 grease Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- -1 polytetrafluorethylene Polymers 0.000 abstract 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cell Electrode Carriers And Collectors (AREA)
Abstract
922,601. Transistors. SIEMENS-SCHUCKERTWERKE A.G. June 9, 1960 [June 9, 1959], No. 20354/60. Class 37. A semi-conductor device having two oppositely directed PN junctions is electrolytically etched by covering part but not all of the surface of the device with electrolyte, and connecting the positive terminal of a D.C. source to a P-conductive part of the device and the negative terminal to an electrode within the electrolyte. Emitter, collector and base electrodes (8, 9 and 3 and 4 respectively) are formed on a P-conductive silicon disc 2 by alloying gold-antimony and gold-boron alloys thereto, producing two oppositely directed PN junctions on the disc. Collector electrode 9 is then connected to a molybdenum disc 11 which is then soldered in a recess in the lower part 12 of the transistor housing. Two inverted U-shaped connecting bridges 13, 14 of gold or gold-plated silver strip are then alloyed to electrodes 3 and 4 and 8 respectively. A hollow cylindrical member 15 e.g. of polytetrafluorethylene is then releasably attached to the outer regions of the upper face of the transistor using silicon grease or paste. An electrolyte such as 4% hydrofluoric acid is then introduced into the cavity formed within member 15 and a platinum electrode 16 connected to the negative terminal of a D.C. source is dipped into the electrolyte close to the surface to be etched. Electrode 16 may be in the shape of an inverted U or, if etching is carried out before connecting bridges 13, 14 are added may be in the form of a ring or two half rings. A platinum wire 17 connects the transistor base electrode, i.e. the P-conductive region, to the positive battery terminal. The lead-in wires for the electrodes are protected by lacquering. After etching the emitter junctions member 15 is removed, the collector junction is chemically etched in known manner, and the housing is sealed. The polarizing voltage during the etching process is maintained below the value at which polishing of the semiconductor body takes place.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES63369A DE1184019B (en) | 1959-06-09 | 1959-06-09 | Device for electrolytic etching of a semiconductor component with an essentially monocrystalline semiconductor body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB922601A true GB922601A (en) | 1963-04-03 |
Family
ID=7496333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2035460A Expired GB922601A (en) | 1959-06-09 | 1960-06-09 | A method of electrolytically etching a semi-conductor device |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1184019B (en) |
| GB (1) | GB922601A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111020686A (en) * | 2019-12-12 | 2020-04-17 | 湖南文理学院 | Preparation method of nano porous silicon convex lens group |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE823763C (en) * | 1949-09-15 | 1951-12-06 | Siemens Ag | Process for electrolytic polishing of the surface of semiconductor crystals |
| DE823470C (en) * | 1950-09-12 | 1951-12-03 | Siemens Ag | Method for etching a semiconductor |
| DE1040134B (en) * | 1956-10-25 | 1958-10-02 | Siemens Ag | Process for the production of semiconductor arrangements with semiconductor bodies with a p-n transition |
-
1959
- 1959-06-09 DE DES63369A patent/DE1184019B/en active Pending
-
1960
- 1960-06-09 GB GB2035460A patent/GB922601A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111020686A (en) * | 2019-12-12 | 2020-04-17 | 湖南文理学院 | Preparation method of nano porous silicon convex lens group |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1184019B (en) | 1964-12-23 |
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