GB911235A - Improvements in or relating to processes for the production of a p-doped region in bodies consisting of substantially monocrystalline semi-conductor material - Google Patents

Improvements in or relating to processes for the production of a p-doped region in bodies consisting of substantially monocrystalline semi-conductor material

Info

Publication number
GB911235A
GB911235A GB1783/60A GB178360A GB911235A GB 911235 A GB911235 A GB 911235A GB 1783/60 A GB1783/60 A GB 1783/60A GB 178360 A GB178360 A GB 178360A GB 911235 A GB911235 A GB 911235A
Authority
GB
United Kingdom
Prior art keywords
gold
boron
relating
processes
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1783/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB911235A publication Critical patent/GB911235A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

In order to provide a P-doping gold-containing foil for silicon, gold and boron powder are intimately mixed together and compressed under pressure e.g. 104 kg/cm.2. This pressure is maintained for at least two days at a temperature of about 900 DEG C. in vacuo or a protective gas. The boron content of part is then determined while the rest is fused with a corresponding quantity of gold and rolled to a foil. This process is said to produce a boron-gold alloy with the boron in molecular distribution. Appreciable rearrangement does not take place even in the subsequent melting and rolling out. The pressed and heated material may be alloyed to further gold, to gallium and/or indium which facilitate wetting and alloy formation. Traces of oxygen and/or sulphur may be added and from 0.3 to 0.4% by weight of bismuth which ensures a plane alloy front.
GB1783/60A 1959-05-12 1960-01-18 Improvements in or relating to processes for the production of a p-doped region in bodies consisting of substantially monocrystalline semi-conductor material Expired GB911235A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0062963 1959-05-12

Publications (1)

Publication Number Publication Date
GB911235A true GB911235A (en) 1962-11-21

Family

ID=7496010

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1783/60A Expired GB911235A (en) 1959-05-12 1960-01-18 Improvements in or relating to processes for the production of a p-doped region in bodies consisting of substantially monocrystalline semi-conductor material

Country Status (5)

Country Link
US (1) US3137595A (en)
BE (2) BE590762A (en)
CH (1) CH398797A (en)
FR (1) FR1244844A (en)
GB (1) GB911235A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211595A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co P-type alloy bonding of semiconductors using a boron-gold alloy
US3214653A (en) * 1959-11-02 1965-10-26 Hughes Aircraft Co Gold bonded, boron containing semiconductor devices
US3339269A (en) * 1962-03-15 1967-09-05 Gen Motors Corp Method of bonding
DE2514922C2 (en) * 1975-04-05 1983-01-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Semiconductor component resistant to alternating thermal loads

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500302A (en) * 1949-11-30
US2686118A (en) * 1952-12-23 1954-08-10 Ontario Research Foundation Method of making metal products directly from ores
NL216614A (en) * 1956-05-15
NL237782A (en) * 1958-02-04 1900-01-01
US2965519A (en) * 1958-11-06 1960-12-20 Bell Telephone Labor Inc Method of making improved contacts to semiconductors
US3068127A (en) * 1959-06-02 1962-12-11 Siemens Ag Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal

Also Published As

Publication number Publication date
CH398797A (en) 1966-03-15
BE590792A (en)
BE590762A (en)
FR1244844A (en) 1960-10-28
US3137595A (en) 1964-06-16

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