CH398797A - Process for the production of a p-doped region in bodies made of monocrystalline semiconductor material - Google Patents

Process for the production of a p-doped region in bodies made of monocrystalline semiconductor material

Info

Publication number
CH398797A
CH398797A CH440660A CH440660A CH398797A CH 398797 A CH398797 A CH 398797A CH 440660 A CH440660 A CH 440660A CH 440660 A CH440660 A CH 440660A CH 398797 A CH398797 A CH 398797A
Authority
CH
Switzerland
Prior art keywords
production
semiconductor material
doped region
monocrystalline semiconductor
bodies made
Prior art date
Application number
CH440660A
Other languages
German (de)
Inventor
Hubert Dr Patalong
Norbert Dr Schink
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH398797A publication Critical patent/CH398797A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Contacts (AREA)
  • Powder Metallurgy (AREA)
CH440660A 1959-05-12 1960-04-20 Process for the production of a p-doped region in bodies made of monocrystalline semiconductor material CH398797A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0062963 1959-05-12

Publications (1)

Publication Number Publication Date
CH398797A true CH398797A (en) 1966-03-15

Family

ID=7496010

Family Applications (1)

Application Number Title Priority Date Filing Date
CH440660A CH398797A (en) 1959-05-12 1960-04-20 Process for the production of a p-doped region in bodies made of monocrystalline semiconductor material

Country Status (5)

Country Link
US (1) US3137595A (en)
BE (2) BE590762A (en)
CH (1) CH398797A (en)
FR (1) FR1244844A (en)
GB (1) GB911235A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3214653A (en) * 1959-11-02 1965-10-26 Hughes Aircraft Co Gold bonded, boron containing semiconductor devices
US3211595A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co P-type alloy bonding of semiconductors using a boron-gold alloy
US3339269A (en) * 1962-03-15 1967-09-05 Gen Motors Corp Method of bonding
DE2514922C2 (en) * 1975-04-05 1983-01-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Semiconductor component resistant to alternating thermal loads

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL82014C (en) * 1949-11-30
US2686118A (en) * 1952-12-23 1954-08-10 Ontario Research Foundation Method of making metal products directly from ores
NL216614A (en) * 1956-05-15
NL235479A (en) * 1958-02-04 1900-01-01
US2965519A (en) * 1958-11-06 1960-12-20 Bell Telephone Labor Inc Method of making improved contacts to semiconductors
US3068127A (en) * 1959-06-02 1962-12-11 Siemens Ag Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal

Also Published As

Publication number Publication date
BE590792A (en)
BE590762A (en)
FR1244844A (en) 1960-10-28
US3137595A (en) 1964-06-16
GB911235A (en) 1962-11-21

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