GB907764A - A method of zone melting a rod of semi-conductor material - Google Patents

A method of zone melting a rod of semi-conductor material

Info

Publication number
GB907764A
GB907764A GB16205/60A GB1620560A GB907764A GB 907764 A GB907764 A GB 907764A GB 16205/60 A GB16205/60 A GB 16205/60A GB 1620560 A GB1620560 A GB 1620560A GB 907764 A GB907764 A GB 907764A
Authority
GB
United Kingdom
Prior art keywords
rod
silicon
molten zone
semi
passage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16205/60A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB907764A publication Critical patent/GB907764A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB16205/60A 1959-05-08 1960-05-06 A method of zone melting a rod of semi-conductor material Expired GB907764A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES62919A DE1094711B (de) 1959-05-08 1959-05-08 Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstaeben, insbesondere aus Silizium

Publications (1)

Publication Number Publication Date
GB907764A true GB907764A (en) 1962-10-10

Family

ID=25995673

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16205/60A Expired GB907764A (en) 1959-05-08 1960-05-06 A method of zone melting a rod of semi-conductor material

Country Status (6)

Country Link
US (1) US3113841A (de)
CH (1) CH386116A (de)
DE (1) DE1094711B (de)
FR (1) FR1261240A (de)
GB (1) GB907764A (de)
NL (2) NL251304A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL258961A (de) * 1959-12-23
DE1165882B (de) * 1960-02-05 1964-03-19 Philips Patentverwaltung Vorrichtung zur Ausfuehrung von Drehbewegungen an stabfoermigen Koerpern, insbesondere an Halbleiterkoerpern
DE1209550B (de) * 1961-03-20 1966-01-27 Licentia Gmbh Halterung fuer zonenzuschmelzende Staebe
DE1444530B2 (de) * 1962-12-12 1970-10-01 Siemens AG, 1000 Berlin u. 8000 München Verfahren und Vorrichtung zum Herstellen von stabförmigem, einkristallinen Halbleitermaterial
US3251658A (en) * 1963-02-26 1966-05-17 Monsanto Co Zone refining start-up
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1224273B (de) * 1964-06-23 1966-09-08 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
DE1265708B (de) * 1965-11-30 1968-04-11 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
DE2322969C3 (de) * 1973-05-07 1980-10-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Haltern der Stabenden beim tiegelfreien Zonenschmelzen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
FR1119039A (fr) * 1954-03-09 1956-06-14 Siemens Ag Procédé pour la préparation d'un corps cristallin, en particulier d'un corps semiconducteur
FR109723A (de) * 1955-01-14
BE548227A (de) * 1955-07-22
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US2990261A (en) * 1958-12-11 1961-06-27 Bell Telephone Labor Inc Processing of boron compact

Also Published As

Publication number Publication date
CH386116A (de) 1964-12-31
FR1261240A (fr) 1961-05-19
NL112832C (de)
NL251304A (de)
US3113841A (en) 1963-12-10
DE1094711B (de) 1960-12-15

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