GB898714A - Improvements relating to semi-reflecting optical devices - Google Patents

Improvements relating to semi-reflecting optical devices

Info

Publication number
GB898714A
GB898714A GB474260A GB474260A GB898714A GB 898714 A GB898714 A GB 898714A GB 474260 A GB474260 A GB 474260A GB 474260 A GB474260 A GB 474260A GB 898714 A GB898714 A GB 898714A
Authority
GB
United Kingdom
Prior art keywords
layer
silicon monoxide
silicon
glass
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB474260A
Inventor
Anthony Edward Ennos
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB474260A priority Critical patent/GB898714A/en
Publication of GB898714A publication Critical patent/GB898714A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors
    • G02B5/0816Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/0825Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
    • G02B5/0833Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only comprising inorganic materials only
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/14Beam splitting or combining systems operating by reflection only
    • G02B27/142Coating structures, e.g. thin films multilayers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/14Beam splitting or combining systems operating by reflection only
    • G02B27/144Beam splitting or combining systems operating by reflection only using partially transparent surfaces without spectral selectivity

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

898,714. Coating by vapour deposition. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Feb. 2, 1961 [Feb. 10, 1960], No. 4742/60. Class 82(2). [Also in Groups XX and XL(b)] A semi-reflecting optical device comprises a transparent base as of glass or plastic, having thereon a first layer of silicon monoxide, a second layer of silicon dioxide and a third layer of silicon monoxide, each layer having an optical thickness which is equal to onequarter of the mean wavelength of the light (e.g. 5500Š) with which the device is to be used. This device may be made by placing a glass base in an evacuated chamber and evaporating silicon monoxide from a tantalum container which is heated by the passage of a current therethrough. Thereafter oxygen is allowed to flow into the chamber and the silicon monoxide is again evaporated so that its vapour reacts with the oxygen to form a deposit of silicon diocide. A further layer of silicon monoxide is then deposited. The thickness of each layer is controlled photo-electrically. For this purpose, a monitor glass 1 is located in the chamber 2 adjacent to the surface of the transparent base member so that similar deposits are formed on surface 3 which is partially covered by a screen 4. Light from a source 7 is passed through a window 8 and reflected on to the monitor glass 1 and then through a window 9 to a photosensitive device 10. As the thickness of the silicon monoxide builds up, the output from the photosensitive device 10 increases to a maximum at which point the evaporation of silicon monoxide is cut off. When depositing silicon dioxide evaporation is cut off when the output from the photosensitive device decreases to a minimum. In an alternative a layer # inch thick is first deposited on a monitor glass and then vapour is allowed to fall thereon and on the transparent base member until a layer having the thickness of # inch is formed on the monitor glass.
GB474260A 1960-02-10 1960-02-10 Improvements relating to semi-reflecting optical devices Expired GB898714A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB474260A GB898714A (en) 1960-02-10 1960-02-10 Improvements relating to semi-reflecting optical devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB474260A GB898714A (en) 1960-02-10 1960-02-10 Improvements relating to semi-reflecting optical devices

Publications (1)

Publication Number Publication Date
GB898714A true GB898714A (en) 1962-06-14

Family

ID=9782921

Family Applications (1)

Application Number Title Priority Date Filing Date
GB474260A Expired GB898714A (en) 1960-02-10 1960-02-10 Improvements relating to semi-reflecting optical devices

Country Status (1)

Country Link
GB (1) GB898714A (en)

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