GB892445A - Improvements in or relating to the doping of silicon - Google Patents

Improvements in or relating to the doping of silicon

Info

Publication number
GB892445A
GB892445A GB19902/59A GB1990259A GB892445A GB 892445 A GB892445 A GB 892445A GB 19902/59 A GB19902/59 A GB 19902/59A GB 1990259 A GB1990259 A GB 1990259A GB 892445 A GB892445 A GB 892445A
Authority
GB
United Kingdom
Prior art keywords
glass
rod
boron
silicon
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19902/59A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB892445A publication Critical patent/GB892445A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
  • Silicon Compounds (AREA)
GB19902/59A 1958-06-14 1959-06-10 Improvements in or relating to the doping of silicon Expired GB892445A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES58617A DE1128048B (de) 1958-06-14 1958-06-14 Verfahren zur p- bzw. n-Dotierung von Silizium fuer Halbleiteranordnungen
DES67834A DE1132663B (de) 1958-06-14 1960-03-31 Verfahren zur p- bzw. n-Dotierung von Silizium fuer Halbleiteranordnungen

Publications (1)

Publication Number Publication Date
GB892445A true GB892445A (en) 1962-03-28

Family

ID=25995536

Family Applications (2)

Application Number Title Priority Date Filing Date
GB19902/59A Expired GB892445A (en) 1958-06-14 1959-06-10 Improvements in or relating to the doping of silicon
GB11198/61A Expired GB963136A (en) 1958-06-14 1961-03-27 Process for doping semi-conductor material

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB11198/61A Expired GB963136A (en) 1958-06-14 1961-03-27 Process for doping semi-conductor material

Country Status (5)

Country Link
CH (2) CH371520A (lt)
DE (2) DE1128048B (lt)
FR (2) FR1226342A (lt)
GB (2) GB892445A (lt)
NL (3) NL113666C (lt)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99619C (lt) * 1955-06-28
DE1029939B (de) * 1955-06-27 1958-05-14 Licentia Gmbh Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleitersystemen

Also Published As

Publication number Publication date
GB963136A (en) 1964-07-08
FR1226342A (fr) 1960-07-11
CH391107A (de) 1965-04-30
CH371520A (de) 1963-08-31
DE1128048B (de) 1962-04-19
FR79757E (fr) 1963-01-25
NL113666C (lt) 1900-01-01
DE1132663B (de) 1962-07-05
NL261580A (lt) 1900-01-01
NL240106A (lt) 1900-01-01

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