GB878590A - Diodes - Google Patents

Diodes

Info

Publication number
GB878590A
GB878590A GB3314059A GB3314059A GB878590A GB 878590 A GB878590 A GB 878590A GB 3314059 A GB3314059 A GB 3314059A GB 3314059 A GB3314059 A GB 3314059A GB 878590 A GB878590 A GB 878590A
Authority
GB
United Kingdom
Prior art keywords
cap
annular
flanges
body part
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3314059A
Inventor
Alfred Donald Prickett
Walter Stein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZF International UK Ltd
Original Assignee
Lucas Industries Ltd
Joseph Lucas Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Industries Ltd, Joseph Lucas Industries Ltd filed Critical Lucas Industries Ltd
Priority to GB3314059A priority Critical patent/GB878590A/en
Publication of GB878590A publication Critical patent/GB878590A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

878,590. Semi-conductor devices. LUCAS (INDUSTRIES) Ltd., JOSEPH. July 21, 1960 [Sept. 30, 1959], No. 33140/59. Class 37. In a diode, Fig. 1, comprising a metal body part 4 to which one face of a silicon or other crystal wafer 7 is secured, a metal terminal cap 10 electrically connected to the other face of the wafer 7 by conductive flex 9, and an annular insulating member 11 physically interconnecting the body part 4 and the cap 10, the body part 4 has a pair of concentric annular flanges 5, 6 extending around the wafer 7, the outer flange 5 being bent over a peripheral shoulder on the member 11, the latter being shaped to provide an annular extension 12 which fits within the annular channel formed between flanges 5 and 6, and a seal 13, as of PTFE, being provided between the extension 12 and the base of the channel. Member 11 is formed of mica filled glass, ceramic, or moulded plastic. Cap 10 comprises two flanges 10a, 14 which engage the member 11, a seal 15 being provided adjacent flange 10a. In a modification, Fig. 2, cap 10 comprises a grooved or serrated portion 16 around which the member 11 is moulded.
GB3314059A 1959-09-30 1959-09-30 Diodes Expired GB878590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3314059A GB878590A (en) 1959-09-30 1959-09-30 Diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3314059A GB878590A (en) 1959-09-30 1959-09-30 Diodes

Publications (1)

Publication Number Publication Date
GB878590A true GB878590A (en) 1961-10-04

Family

ID=10349061

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3314059A Expired GB878590A (en) 1959-09-30 1959-09-30 Diodes

Country Status (1)

Country Link
GB (1) GB878590A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335339A (en) * 1965-03-19 1967-08-08 Unitrode Corp High voltage rectifier
US3515955A (en) * 1966-10-27 1970-06-02 Semikron G Fur Gleichrichtelba Semiconductor arrangement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335339A (en) * 1965-03-19 1967-08-08 Unitrode Corp High voltage rectifier
US3515955A (en) * 1966-10-27 1970-06-02 Semikron G Fur Gleichrichtelba Semiconductor arrangement

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