GB833448A - Improvements in or relating to the production of semi-conducting crystals - Google Patents
Improvements in or relating to the production of semi-conducting crystalsInfo
- Publication number
- GB833448A GB833448A GB1637256A GB1637256A GB833448A GB 833448 A GB833448 A GB 833448A GB 1637256 A GB1637256 A GB 1637256A GB 1637256 A GB1637256 A GB 1637256A GB 833448 A GB833448 A GB 833448A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- acceptor
- donor
- conductor
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
833,448. Semi-conductor devices. TELEFUNKEN G.m.b.H. May 28, 1956 [May 26, 1955], No. 16372/56. Class 37. A P or N-type crystal is grown from a fused mass of semi-conductor and an impurity in the form of a compound which is soluble in the semi-conductor, not substantially vaporized at the fusing temperature and comprises at least one donor (or acceptor) constituent having a greater segregation coefficient than any other acceptor (or donor) constituent. In the preferred example, indium phosphide is added to a silicon melt from which a silicon crystal is produced by pulling or otherwise. Since the segregation coefficient of the donor phosphorus exceeds that of the acceptor indium, an N-type crystal will be produced. Use of the compound as the impurity avoids the difficulty that phosphorus, arsenic or antimony used alone would vaporize away before the melting-point of silicon was reached.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET10956A DE1021495B (en) | 1955-05-26 | 1955-05-26 | Process for the production of n- or p-conducting semiconductors by drawing from the melt |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB833448A true GB833448A (en) | 1960-04-27 |
Family
ID=7546560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1637256A Expired GB833448A (en) | 1955-05-26 | 1956-05-28 | Improvements in or relating to the production of semi-conducting crystals |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1021495B (en) |
| GB (1) | GB833448A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1093483B (en) * | 1958-06-04 | 1960-11-24 | Telefunken Gmbh | Method for producing semiconductor arrangements with two pn junctions, in particular silicon transistors, by fusing two semiconductor crystals |
-
1955
- 1955-05-26 DE DET10956A patent/DE1021495B/en active Pending
-
1956
- 1956-05-28 GB GB1637256A patent/GB833448A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1021495B (en) | 1957-12-27 |
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