GB832020A - Method of manufacturing monocrystalline bodies of semiconductor material - Google Patents
Method of manufacturing monocrystalline bodies of semiconductor materialInfo
- Publication number
- GB832020A GB832020A GB3338757A GB3338757A GB832020A GB 832020 A GB832020 A GB 832020A GB 3338757 A GB3338757 A GB 3338757A GB 3338757 A GB3338757 A GB 3338757A GB 832020 A GB832020 A GB 832020A
- Authority
- GB
- United Kingdom
- Prior art keywords
- mould
- crystal
- pressure
- seed
- funnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 7
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 6
- 230000002706 hydrostatic effect Effects 0.000 abstract 2
- 239000012768 molten material Substances 0.000 abstract 2
- 238000007711 solidification Methods 0.000 abstract 2
- 230000008023 solidification Effects 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000011344 liquid material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000011343 solid material Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000009827 uniform distribution Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEST11849A DE1046341B (de) | 1956-10-31 | 1956-10-31 | Verfahren zur Herstellung von einkristallinen Formkoerpern aus Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB832020A true GB832020A (en) | 1960-04-06 |
Family
ID=7455546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3338757A Expired GB832020A (en) | 1956-10-31 | 1957-10-25 | Method of manufacturing monocrystalline bodies of semiconductor material |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE562066A (enrdf_load_stackoverflow) |
| DE (1) | DE1046341B (enrdf_load_stackoverflow) |
| GB (1) | GB832020A (enrdf_load_stackoverflow) |
| NL (1) | NL111507C (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2508803C3 (de) * | 1975-02-28 | 1982-07-08 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur |
-
0
- BE BE562066D patent/BE562066A/xx unknown
- NL NL111507D patent/NL111507C/xx active
-
1956
- 1956-10-31 DE DEST11849A patent/DE1046341B/de active Pending
-
1957
- 1957-10-25 GB GB3338757A patent/GB832020A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1046341B (de) | 1958-12-11 |
| BE562066A (enrdf_load_stackoverflow) | |
| NL111507C (enrdf_load_stackoverflow) |
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