GB973756A - Process for preparing a thermoelectric material - Google Patents

Process for preparing a thermoelectric material

Info

Publication number
GB973756A
GB973756A GB38104/61A GB3810461A GB973756A GB 973756 A GB973756 A GB 973756A GB 38104/61 A GB38104/61 A GB 38104/61A GB 3810461 A GB3810461 A GB 3810461A GB 973756 A GB973756 A GB 973756A
Authority
GB
United Kingdom
Prior art keywords
telluride
bismuth
bodies
reaction
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38104/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB973756A publication Critical patent/GB973756A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/007Tellurides or selenides of metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C28/00Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/852Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/40Electric properties

Abstract

<PICT:0973756/C1/1> Solid compound bodies having thermoelectric properties are produced by a process comprising introducing at least two constituents into a reaction vessel, subjecting them under inert atmospheric conditions to a temperature above the melting points of the constituents and of the reaction compound thereof and rapidly solidifying the molten reaction product by applying a cooling liquid to the reaction vessel. The process is particularly suitable for anisotropic thermoelectric materials (e.g. bismuth selenide telluride and bismuth antimony telluride), but may also be used for isotropic materials. Fig. 1 illustrates an apparatus suitable for the production of bismuth selenide tellurides. An evacuated sealed vessel (10), made, for example, of quartz and containing prescribed quantities of bismuth, selenium and tellurium, is suspended in an aperture 12 of a furnace 14. The aperture is lined with a smooth heat conductive ceramic lining 16 with a heating coil 18 disposed around the lining such that the coil is more dense at the bottom than at the top of the furnace. After heating, the reaction vessel 10 is lowered through the high temperature region at the bottom of the furnace directly into a quenching tank 24, whence the reaction compound is solidified. Specified bodies, other than those mentioned above, are indium antimonide, germanium telluride, lead telluride, germanium bismuth telluride and manganese germanium telluride and reference is made to the incorporation of doping impurities in said bodies. Reference has been directed by the Comptroller to Specifications 876,337, 889,480 and 904,878.
GB38104/61A 1960-11-21 1961-10-24 Process for preparing a thermoelectric material Expired GB973756A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7056960A 1960-11-21 1960-11-21

Publications (1)

Publication Number Publication Date
GB973756A true GB973756A (en) 1964-10-28

Family

ID=22096097

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38104/61A Expired GB973756A (en) 1960-11-21 1961-10-24 Process for preparing a thermoelectric material

Country Status (2)

Country Link
DE (1) DE1191584B (en)
GB (1) GB973756A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115196602A (en) * 2022-07-15 2022-10-18 湖北赛格瑞新能源科技有限公司 Method for preparing n-type bismuth telluride-based thermoelectric material by drawing process

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB834593A (en) * 1956-12-18 1960-05-11 Gen Electric Co Ltd Improvements in or relating to thermocouples
DE1041987B (en) * 1957-08-22 1958-10-30 Siemens Ag Thermocouple, especially for thermoelectric cold generation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115196602A (en) * 2022-07-15 2022-10-18 湖北赛格瑞新能源科技有限公司 Method for preparing n-type bismuth telluride-based thermoelectric material by drawing process
CN115196602B (en) * 2022-07-15 2024-01-09 湖北赛格瑞新能源科技有限公司 Method for preparing n-type bismuth telluride-based thermoelectric material by drawing process

Also Published As

Publication number Publication date
DE1191584B (en) 1965-04-22

Similar Documents

Publication Publication Date Title
US2930098A (en) Production of sintered bodies from powdered crystalline materials
GB759002A (en) Production of semiconductor bodies
GB955818A (en) Barium ceramic material and the method of making the same
Korczak et al. Liquid encapsulated Czochralski growth of silver thiogallate
US3017446A (en) Preparation of material for thermocouples
US2826666A (en) Improvement in apparatus for growing single crystals
Fischer Techniques for Melt‐Growth of Luminescent Semiconductor Crystals under Pressure
US2855335A (en) Method of purifying semiconductor material
US2576267A (en) Preparation of germanium rectifier material
US3378409A (en) Production of crystalline material
GB784431A (en) Improvements in or relating to methods of manufacturing semi-conductive bodies
GB973756A (en) Process for preparing a thermoelectric material
US3228805A (en) Method of producing homogeneous thermoelectric alloy slugs
US4863553A (en) Method of preparing radially homogenous mercury cadmium telluride crystals
US4578145A (en) Method of making monocrystalline ternary semiconductor compounds
US3382047A (en) Preparing large single crystalline bodies of rare earth chalcogenides
US3899304A (en) Process of growing crystals
US3036898A (en) Semiconductor zone refining and crystal growth
US3242015A (en) Apparatus and method for producing single crystal structures
US3272591A (en) Production of single crystals from incongruently melting material
JPS5938190B2 (en) Method for manufacturing Hg↓1-↓xCd↓xTe crystal
US2990261A (en) Processing of boron compact
GB727447A (en) Formation of p-n junctions
US3129056A (en) Process for producing rare earth selenides and tellurides
US3933990A (en) Synthesization method of ternary chalcogenides