GB973756A - Process for preparing a thermoelectric material - Google Patents
Process for preparing a thermoelectric materialInfo
- Publication number
- GB973756A GB973756A GB38104/61A GB3810461A GB973756A GB 973756 A GB973756 A GB 973756A GB 38104/61 A GB38104/61 A GB 38104/61A GB 3810461 A GB3810461 A GB 3810461A GB 973756 A GB973756 A GB 973756A
- Authority
- GB
- United Kingdom
- Prior art keywords
- telluride
- bismuth
- bodies
- reaction
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Abstract
<PICT:0973756/C1/1> Solid compound bodies having thermoelectric properties are produced by a process comprising introducing at least two constituents into a reaction vessel, subjecting them under inert atmospheric conditions to a temperature above the melting points of the constituents and of the reaction compound thereof and rapidly solidifying the molten reaction product by applying a cooling liquid to the reaction vessel. The process is particularly suitable for anisotropic thermoelectric materials (e.g. bismuth selenide telluride and bismuth antimony telluride), but may also be used for isotropic materials. Fig. 1 illustrates an apparatus suitable for the production of bismuth selenide tellurides. An evacuated sealed vessel (10), made, for example, of quartz and containing prescribed quantities of bismuth, selenium and tellurium, is suspended in an aperture 12 of a furnace 14. The aperture is lined with a smooth heat conductive ceramic lining 16 with a heating coil 18 disposed around the lining such that the coil is more dense at the bottom than at the top of the furnace. After heating, the reaction vessel 10 is lowered through the high temperature region at the bottom of the furnace directly into a quenching tank 24, whence the reaction compound is solidified. Specified bodies, other than those mentioned above, are indium antimonide, germanium telluride, lead telluride, germanium bismuth telluride and manganese germanium telluride and reference is made to the incorporation of doping impurities in said bodies. Reference has been directed by the Comptroller to Specifications 876,337, 889,480 and 904,878.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7056960A | 1960-11-21 | 1960-11-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB973756A true GB973756A (en) | 1964-10-28 |
Family
ID=22096097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB38104/61A Expired GB973756A (en) | 1960-11-21 | 1961-10-24 | Process for preparing a thermoelectric material |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE1191584B (en) |
GB (1) | GB973756A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115196602A (en) * | 2022-07-15 | 2022-10-18 | 湖北赛格瑞新能源科技有限公司 | Method for preparing n-type bismuth telluride-based thermoelectric material by drawing process |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB834593A (en) * | 1956-12-18 | 1960-05-11 | Gen Electric Co Ltd | Improvements in or relating to thermocouples |
DE1041987B (en) * | 1957-08-22 | 1958-10-30 | Siemens Ag | Thermocouple, especially for thermoelectric cold generation |
-
1961
- 1961-10-24 GB GB38104/61A patent/GB973756A/en not_active Expired
- 1961-11-10 DE DEW31042A patent/DE1191584B/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115196602A (en) * | 2022-07-15 | 2022-10-18 | 湖北赛格瑞新能源科技有限公司 | Method for preparing n-type bismuth telluride-based thermoelectric material by drawing process |
CN115196602B (en) * | 2022-07-15 | 2024-01-09 | 湖北赛格瑞新能源科技有限公司 | Method for preparing n-type bismuth telluride-based thermoelectric material by drawing process |
Also Published As
Publication number | Publication date |
---|---|
DE1191584B (en) | 1965-04-22 |
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