GB784431A - Improvements in or relating to methods of manufacturing semi-conductive bodies - Google Patents

Improvements in or relating to methods of manufacturing semi-conductive bodies

Info

Publication number
GB784431A
GB784431A GB9425/55A GB942555A GB784431A GB 784431 A GB784431 A GB 784431A GB 9425/55 A GB9425/55 A GB 9425/55A GB 942555 A GB942555 A GB 942555A GB 784431 A GB784431 A GB 784431A
Authority
GB
United Kingdom
Prior art keywords
charge
atm
sulphur
vessel
lead sulphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9425/55A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB784431A publication Critical patent/GB784431A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Abstract

784,431. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES, Ltd. March 31, 1955 [April 1, 1954], No. 9425/55. Class 37. Apparatus for manufacturing semi-conductive bodies having p-n junctions comprises a tubular container 1 having a contraction 2 terminating in a bulb 3 which contains sulphur 4, the main charge 5 of lead sulphide being contained in a vessel 6 of sintered aluminium oxide. The container 1 is exhausted and the part containing vessel 6 is heated to 500‹ C. by a carbon furnace 9 and the sulphur 4 is heated to a temperature of 444‹ C. by an electric oven 8 to produce a sulphur vapour pressure of 1 atm. in the whole of the container. The temperature of the lead sulphide 5 is increased to 1150‹ C. by a high-frequency coil 7 which is moved from left to right at a speed of 1 mm. per minute. The lead sulphide solidifying at the edge of the melting zone exhibits p conductivity since sulphur is included in the lattice at a concentration higher than that corresponding to the stoichiometric lead sulphide. After the molten zone has traversed about half of the charge the coil is stopped and the oven 8 cooled to a temperature of 400‹ C., the vapour pressure of the sulphur thus being decreased to 0.4 atm. and the coil 7 is set in movement again. Lead sulphide of n-type conductivity now solidifies at the edge of the melting zone due to the sulphur pressure of 0.4 atm. being in equilibrium with a melt containing a smaller amount of sulphur than corresponds to the stoichiometric lead sulphide. After cooling, the charge 5 in the form of a rod is removed. Instead of the materials previously described a quantity of cadmium is placed in bulb 3 and a vessel 6 of graphite contains cadmium telluride and indium is added to the left-hand side of the charge to an amount such that, when a zone 2 cms, wide is provided by melting an indium concentration of 10<SP>19</SP> atoms per c.c. is obtained. After being exhausted, vessel 1 is heated to 900 ‹ C. by oven 9 and bulb 3 is heated to 750‹ C. by oven 8 to produce a cadmium vapour pressure of 1 atm. in the whole vessel. A zone of the charge is then melted at 1040‹ C. by coil 7 which is moved from left to right at 5 mms. per minute and after half of the charge has been traversed, the temperature of the cadmium in bulb 3 is reduced to 650‹ C. to lower the cadmium vapour pressure to 0.3 atm. The part of the charge which solidifies at a pressure of 1 atm. is n-conductive and the remainder solidifying at 0.3 atm. pressure is p-conductive. In a still further embodiment a charge of lead sulphide containing 0.5 per cent of silver is heated in a sealed vessel by a moving coil, the vessel having inlet and outlet connections for a gas flow of H 2 S to provide a p-type material and a mixture of H 2 and H 2 S to provide n-type material.
GB9425/55A 1954-04-01 1955-03-31 Improvements in or relating to methods of manufacturing semi-conductive bodies Expired GB784431A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL336903X 1954-04-01

Publications (1)

Publication Number Publication Date
GB784431A true GB784431A (en) 1957-10-09

Family

ID=19784567

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9425/55A Expired GB784431A (en) 1954-04-01 1955-03-31 Improvements in or relating to methods of manufacturing semi-conductive bodies

Country Status (7)

Country Link
US (1) US2849343A (en)
BE (1) BE536985A (en)
CH (1) CH336903A (en)
DE (1) DE1025995B (en)
FR (1) FR1129941A (en)
GB (1) GB784431A (en)
NL (1) NL111118C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900286A (en) * 1957-11-19 1959-08-18 Rca Corp Method of manufacturing semiconductive bodies

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2950220A (en) * 1956-03-13 1960-08-23 Battelle Development Corp Preparation of p-n junctions by the decomposition of compounds
US3003900A (en) * 1957-11-12 1961-10-10 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
DE1164680B (en) * 1958-05-21 1964-03-05 Siemens Ag Process for the production of rod-shaped semiconductor bodies of high purity
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication
NL252532A (en) * 1959-06-30 1900-01-01
NL270518A (en) * 1960-11-30
NL265122A (en) * 1961-05-24
DE1266281B (en) * 1961-06-30 1968-04-18 Telefunken Patent Method for doping semiconductor crystals
DE1254606B (en) * 1963-11-08 1967-11-23 Siemens Ag Process for the production of single crystals from inorganic crystalline semiconductor compounds with high vapor pressure at the melting point
US3303067A (en) * 1963-12-26 1967-02-07 Ibm Method of fabricating thin film transistor devices
JPS575325A (en) * 1980-06-12 1982-01-12 Junichi Nishizawa Semicondoctor p-n junction device and manufacture thereof
JPS577131A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of p-n junction
JPS5863183A (en) * 1981-10-09 1983-04-14 Semiconductor Res Found 2-6 group compound semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2447829A (en) * 1946-08-14 1948-08-24 Purdue Research Foundation Germanium-helium alloys and rectifiers made therefrom
NL82014C (en) * 1949-11-30
BE500569A (en) * 1950-01-13
US2730470A (en) * 1950-06-15 1956-01-10 Bell Telephone Labor Inc Method of making semi-conductor crystals
BE509317A (en) * 1951-03-07 1900-01-01
DE894293C (en) * 1951-06-29 1953-10-22 Western Electric Co Process for producing a crystal from semiconductor material
DE885756C (en) * 1951-10-08 1953-06-25 Telefunken Gmbh Process for the production of p- or n-conducting layers
BE510303A (en) * 1951-11-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900286A (en) * 1957-11-19 1959-08-18 Rca Corp Method of manufacturing semiconductive bodies

Also Published As

Publication number Publication date
NL111118C (en)
CH336903A (en) 1959-03-15
US2849343A (en) 1958-08-26
BE536985A (en)
DE1025995B (en) 1958-03-13
FR1129941A (en) 1957-01-29

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