JPS6437456A - Thermoelectric semiconductor material and production thereof - Google Patents

Thermoelectric semiconductor material and production thereof

Info

Publication number
JPS6437456A
JPS6437456A JP62192238A JP19223887A JPS6437456A JP S6437456 A JPS6437456 A JP S6437456A JP 62192238 A JP62192238 A JP 62192238A JP 19223887 A JP19223887 A JP 19223887A JP S6437456 A JPS6437456 A JP S6437456A
Authority
JP
Japan
Prior art keywords
powder
solid solution
particle diameter
electrically conductive
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62192238A
Other languages
Japanese (ja)
Other versions
JPH0832588B2 (en
Inventor
Hisaaki Imaizumi
Hiroaki Yamaguchi
Masataka Yamanashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Komatsu Ltd
Original Assignee
Sumco Techxiv Corp
Komatsu Ltd
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp, Komatsu Ltd, Komatsu Electronic Metals Co Ltd filed Critical Sumco Techxiv Corp
Priority to JP62192238A priority Critical patent/JPH0832588B2/en
Publication of JPS6437456A publication Critical patent/JPS6437456A/en
Publication of JPH0832588B2 publication Critical patent/JPH0832588B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)

Abstract

PURPOSE:To obtain a thermoelectric semiconductor material, capable of readily carrying out doping control and having a high performance index and production yield, by sintering a Bi2Te3Se3 solid solution powder, having a specific particle diameter and containing a negative electrically conductive type impurity. CONSTITUTION:A negative electrically conductive type impurity (e.g. SbI4) in an amount of <=10<20>cm<-3> is added and mixed with Bi, Te and Se in amounts so as to satisfy a composition of the formula Bi2(Te1-xSex)3 (0.05<x<0.3) and the resultant mixture is charged into a quartz tube to discharge air therefrom. The above-mentioned mixture is sealed therein and then melted while heating (e.g. 650 deg.C for 3hr) and the melt is quenched to a temperature (e.g. 560 deg.C) a little lower than the solidifying point to form a solid solution. The obtained ingot is subsequently pulverized and sieved to provide a solid solution powder having an uniform particle diameter within the range of 10-200mu and the resultant powder is then sintered in a vacuum or inert gas to afford the titled material consisting of a sintered compact of the powder.
JP62192238A 1987-07-31 1987-07-31 Thermoelectric semiconductor material and manufacturing method thereof Expired - Fee Related JPH0832588B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62192238A JPH0832588B2 (en) 1987-07-31 1987-07-31 Thermoelectric semiconductor material and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62192238A JPH0832588B2 (en) 1987-07-31 1987-07-31 Thermoelectric semiconductor material and manufacturing method thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP34759398A Division JP3278140B2 (en) 1998-12-07 1998-12-07 Thermoelectric semiconductor material and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPS6437456A true JPS6437456A (en) 1989-02-08
JPH0832588B2 JPH0832588B2 (en) 1996-03-29

Family

ID=16287952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62192238A Expired - Fee Related JPH0832588B2 (en) 1987-07-31 1987-07-31 Thermoelectric semiconductor material and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0832588B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990016086A1 (en) * 1989-06-14 1990-12-27 Kabushiki Kaisha Komatsu Seisakusho Thermoelectric semiconductor material and method of producing the same
JPH1065222A (en) * 1996-08-14 1998-03-06 Natl Aerospace Lab Manufacture of thermoelectric conversion device
KR20020040920A (en) * 2000-11-25 2002-05-31 안성암 A Thermal Contaction Material Manufacturing Device And Manufacturing Method Thereof
KR100382599B1 (en) * 2000-12-15 2003-05-09 한국전기연구원 Manufacturing method of thermoelectric nanopowder
US8035026B2 (en) 2003-08-26 2011-10-11 Kyocera Corporation Thermoelectric material, thermoelectric element, thermoelectric module and methods for manufacturing the same
RU2470414C1 (en) * 2011-06-28 2012-12-20 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" METHOD OF PRODUCING p-TYPE THERMOELECTRIC MATERIAL BASED ON SOLID SOLUTIONS OF Bi2Te3-Sb2Te3
WO2013178036A1 (en) * 2012-05-28 2013-12-05 广东先导稀材股份有限公司 Bismuth selenide preparation method
JP2018523294A (en) * 2015-07-21 2018-08-16 エルジー・ケム・リミテッド Compound semiconductor thermoelectric material and manufacturing method thereof
CN113405326A (en) * 2021-06-29 2021-09-17 北京市永康药业有限公司 Efficient and continuous medicine drying device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5086286A (en) * 1973-11-30 1975-07-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5086286A (en) * 1973-11-30 1975-07-11

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990016086A1 (en) * 1989-06-14 1990-12-27 Kabushiki Kaisha Komatsu Seisakusho Thermoelectric semiconductor material and method of producing the same
JPH1065222A (en) * 1996-08-14 1998-03-06 Natl Aerospace Lab Manufacture of thermoelectric conversion device
KR20020040920A (en) * 2000-11-25 2002-05-31 안성암 A Thermal Contaction Material Manufacturing Device And Manufacturing Method Thereof
KR100382599B1 (en) * 2000-12-15 2003-05-09 한국전기연구원 Manufacturing method of thermoelectric nanopowder
US8035026B2 (en) 2003-08-26 2011-10-11 Kyocera Corporation Thermoelectric material, thermoelectric element, thermoelectric module and methods for manufacturing the same
US8519256B2 (en) 2003-08-26 2013-08-27 Kyocera Corporation Thermoelectric material, thermoelectric element, thermoelectric module and method for manufacturing the same
RU2470414C1 (en) * 2011-06-28 2012-12-20 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" METHOD OF PRODUCING p-TYPE THERMOELECTRIC MATERIAL BASED ON SOLID SOLUTIONS OF Bi2Te3-Sb2Te3
WO2013178036A1 (en) * 2012-05-28 2013-12-05 广东先导稀材股份有限公司 Bismuth selenide preparation method
CN103449384A (en) * 2012-05-28 2013-12-18 广东先导稀材股份有限公司 Preparation method of bismuth triselenide
JP2018523294A (en) * 2015-07-21 2018-08-16 エルジー・ケム・リミテッド Compound semiconductor thermoelectric material and manufacturing method thereof
EP3246959A4 (en) * 2015-07-21 2018-09-26 LG Chem, Ltd. Compound semiconductor thermoelectric material and method for manufacturing same
CN113405326A (en) * 2021-06-29 2021-09-17 北京市永康药业有限公司 Efficient and continuous medicine drying device

Also Published As

Publication number Publication date
JPH0832588B2 (en) 1996-03-29

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