JPS6437456A - Thermoelectric semiconductor material and production thereof - Google Patents
Thermoelectric semiconductor material and production thereofInfo
- Publication number
- JPS6437456A JPS6437456A JP62192238A JP19223887A JPS6437456A JP S6437456 A JPS6437456 A JP S6437456A JP 62192238 A JP62192238 A JP 62192238A JP 19223887 A JP19223887 A JP 19223887A JP S6437456 A JPS6437456 A JP S6437456A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- solid solution
- particle diameter
- electrically conductive
- type impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
PURPOSE:To obtain a thermoelectric semiconductor material, capable of readily carrying out doping control and having a high performance index and production yield, by sintering a Bi2Te3Se3 solid solution powder, having a specific particle diameter and containing a negative electrically conductive type impurity. CONSTITUTION:A negative electrically conductive type impurity (e.g. SbI4) in an amount of <=10<20>cm<-3> is added and mixed with Bi, Te and Se in amounts so as to satisfy a composition of the formula Bi2(Te1-xSex)3 (0.05<x<0.3) and the resultant mixture is charged into a quartz tube to discharge air therefrom. The above-mentioned mixture is sealed therein and then melted while heating (e.g. 650 deg.C for 3hr) and the melt is quenched to a temperature (e.g. 560 deg.C) a little lower than the solidifying point to form a solid solution. The obtained ingot is subsequently pulverized and sieved to provide a solid solution powder having an uniform particle diameter within the range of 10-200mu and the resultant powder is then sintered in a vacuum or inert gas to afford the titled material consisting of a sintered compact of the powder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62192238A JPH0832588B2 (en) | 1987-07-31 | 1987-07-31 | Thermoelectric semiconductor material and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62192238A JPH0832588B2 (en) | 1987-07-31 | 1987-07-31 | Thermoelectric semiconductor material and manufacturing method thereof |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34759398A Division JP3278140B2 (en) | 1998-12-07 | 1998-12-07 | Thermoelectric semiconductor material and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6437456A true JPS6437456A (en) | 1989-02-08 |
JPH0832588B2 JPH0832588B2 (en) | 1996-03-29 |
Family
ID=16287952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62192238A Expired - Fee Related JPH0832588B2 (en) | 1987-07-31 | 1987-07-31 | Thermoelectric semiconductor material and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0832588B2 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990016086A1 (en) * | 1989-06-14 | 1990-12-27 | Kabushiki Kaisha Komatsu Seisakusho | Thermoelectric semiconductor material and method of producing the same |
JPH1065222A (en) * | 1996-08-14 | 1998-03-06 | Natl Aerospace Lab | Manufacture of thermoelectric conversion device |
KR20020040920A (en) * | 2000-11-25 | 2002-05-31 | 안성암 | A Thermal Contaction Material Manufacturing Device And Manufacturing Method Thereof |
KR100382599B1 (en) * | 2000-12-15 | 2003-05-09 | 한국전기연구원 | Manufacturing method of thermoelectric nanopowder |
US8035026B2 (en) | 2003-08-26 | 2011-10-11 | Kyocera Corporation | Thermoelectric material, thermoelectric element, thermoelectric module and methods for manufacturing the same |
RU2470414C1 (en) * | 2011-06-28 | 2012-12-20 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | METHOD OF PRODUCING p-TYPE THERMOELECTRIC MATERIAL BASED ON SOLID SOLUTIONS OF Bi2Te3-Sb2Te3 |
WO2013178036A1 (en) * | 2012-05-28 | 2013-12-05 | 广东先导稀材股份有限公司 | Bismuth selenide preparation method |
JP2018523294A (en) * | 2015-07-21 | 2018-08-16 | エルジー・ケム・リミテッド | Compound semiconductor thermoelectric material and manufacturing method thereof |
CN113405326A (en) * | 2021-06-29 | 2021-09-17 | 北京市永康药业有限公司 | Efficient and continuous medicine drying device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5086286A (en) * | 1973-11-30 | 1975-07-11 |
-
1987
- 1987-07-31 JP JP62192238A patent/JPH0832588B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5086286A (en) * | 1973-11-30 | 1975-07-11 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990016086A1 (en) * | 1989-06-14 | 1990-12-27 | Kabushiki Kaisha Komatsu Seisakusho | Thermoelectric semiconductor material and method of producing the same |
JPH1065222A (en) * | 1996-08-14 | 1998-03-06 | Natl Aerospace Lab | Manufacture of thermoelectric conversion device |
KR20020040920A (en) * | 2000-11-25 | 2002-05-31 | 안성암 | A Thermal Contaction Material Manufacturing Device And Manufacturing Method Thereof |
KR100382599B1 (en) * | 2000-12-15 | 2003-05-09 | 한국전기연구원 | Manufacturing method of thermoelectric nanopowder |
US8035026B2 (en) | 2003-08-26 | 2011-10-11 | Kyocera Corporation | Thermoelectric material, thermoelectric element, thermoelectric module and methods for manufacturing the same |
US8519256B2 (en) | 2003-08-26 | 2013-08-27 | Kyocera Corporation | Thermoelectric material, thermoelectric element, thermoelectric module and method for manufacturing the same |
RU2470414C1 (en) * | 2011-06-28 | 2012-12-20 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | METHOD OF PRODUCING p-TYPE THERMOELECTRIC MATERIAL BASED ON SOLID SOLUTIONS OF Bi2Te3-Sb2Te3 |
WO2013178036A1 (en) * | 2012-05-28 | 2013-12-05 | 广东先导稀材股份有限公司 | Bismuth selenide preparation method |
CN103449384A (en) * | 2012-05-28 | 2013-12-18 | 广东先导稀材股份有限公司 | Preparation method of bismuth triselenide |
JP2018523294A (en) * | 2015-07-21 | 2018-08-16 | エルジー・ケム・リミテッド | Compound semiconductor thermoelectric material and manufacturing method thereof |
EP3246959A4 (en) * | 2015-07-21 | 2018-09-26 | LG Chem, Ltd. | Compound semiconductor thermoelectric material and method for manufacturing same |
CN113405326A (en) * | 2021-06-29 | 2021-09-17 | 北京市永康药业有限公司 | Efficient and continuous medicine drying device |
Also Published As
Publication number | Publication date |
---|---|
JPH0832588B2 (en) | 1996-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |