CN115196602B - Method for preparing n-type bismuth telluride-based thermoelectric material by drawing process - Google Patents
Method for preparing n-type bismuth telluride-based thermoelectric material by drawing process Download PDFInfo
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- CN115196602B CN115196602B CN202210837619.2A CN202210837619A CN115196602B CN 115196602 B CN115196602 B CN 115196602B CN 202210837619 A CN202210837619 A CN 202210837619A CN 115196602 B CN115196602 B CN 115196602B
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- bismuth telluride
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- 239000000463 material Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 27
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 25
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 230000006698 induction Effects 0.000 claims abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 10
- 238000003723 Smelting Methods 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 238000011068 loading method Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 238000001953 recrystallisation Methods 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000010687 lubricating oil Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000005551 mechanical alloying Methods 0.000 description 1
- 238000002074 melt spinning Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010310 metallurgical process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000002490 spark plasma sintering Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/32—Thermal properties
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
Abstract
The invention belongs to the technical field of bismuth telluride-based thermoelectric materials, and particularly relates to a method for preparing an n-type bismuth telluride-based thermoelectric material by a drawing process. The invention realizes the drawing deformation of the brittle material through the drawing process, rapidly prepares the thermoelectric material with fine and uniform grains and high orientation, and remarkably improves the mechanical property and thermoelectric property; and because the induction heating is rapid, the drawing process can rapidly prepare the thermoelectric materials in batches, and has very high practical value.
Description
Technical Field
The invention belongs to the technical field of bismuth telluride-based thermoelectric materials, and particularly relates to a method for preparing an n-type bismuth telluride-based thermoelectric material by a drawing process.
Background
Thermoelectric materials can be classified into low temperature region (room temperature) thermoelectric materials such as Bi according to the use temperature region 2 Te 3 Base alloys, medium temperature regions such as PbTe base alloys, high Wen Ouru SiGe base alloys, and Bi 2 Te 3 The thermoelectric materials of the base system are used more mature because of the better thermoelectric performance near room temperature. The thermoelectric material quality is evaluated mainly by ZT value, although a lot of Bi with high ZT value is reported in the laboratory at present 2 Te 3 Methods of base materials, such as ball milling, mechanical alloying, SPS, melt-spinning, wet chemical methods, are rarely used in practice because of various limitations. At present, commercial production mainly comprises the step of obtaining single crystals by a zone melting method, wherein the ZT value is high, but the mechanical property is poor, so that the further development of the single crystals is restricted. The drawing process is a metallurgical process, is mainly used for molding plastic metal materials such as pipes, bars, wires and other special-shaped parts, can be beneficial to refining metal grains and improving the comprehensive performance of products, and is not needed in the preparation of thermoelectric materials at presentAn over-drawing process is used.
Disclosure of Invention
The invention aims to provide a brand-new method for preparing a high-performance n-type bismuth telluride thermoelectric material in the field, which is used for rapidly preparing a thermoelectric material with fine and uniform grains and high orientation through a drawing process, and the mechanical property, the thermoelectric property and the stability of the thermoelectric material are obviously improved.
In order to achieve the above purpose, the technical scheme adopted by the invention is a method for preparing an n-type bismuth telluride-based thermoelectric material by a drawing process, which comprises the following specific steps:
step 1, bi, te and Se are used as raw materials according to the stoichiometric ratio of Bi 2 Te 3-x Se x (x is more than or equal to 0.15 and less than or equal to 0.6), proportioning, smelting, preparing a crystal bar, crushing the crystal bar into powder, and performing hot-pressing sintering or SPS sintering on the powder to prepare a block;
step 2, loading the block prepared in the step 1 into a copper pipe and sealing the copper pipe;
step 3, fixing one end of the copper pipe on a traction rod, heating the copper pipe at the inlet of the die, and finally controlling the temperature to be any temperature point within the range of 350-520 ℃ and then drawing, wherein the drawing speed is 1 cm/min-10 cm/min, drawing is performed for 1-3 times, and the final extension coefficient is controlled to be 6-25;
and step 4, taking out the substance obtained by drawing to obtain the n-type bismuth telluride-based thermoelectric material.
In addition, the purity of Bi, te and Se in the step 1 is more than 99.99%.
In addition, the smelting temperature in the step 1 is 590-850 ℃,
in addition, the copper pipe in the step 2 is made of copper or copper alloy.
In the step 3, the die is a drawing die with a die hole wall inclination angle of 5-30 degrees.
In addition, the heating mode in the step 3 is medium-frequency induction heating.
In the drawing process in step 3, the inner diameter of the die hole used in each drawing is different, and the inner diameter of the die hole used in the last drawing is smaller than that used in the previous drawing.
Compared with the prior art, the invention has the beneficial effects that: 1. the bismuth telluride-based thermoelectric material is a brittle material at normal temperature, and is difficult to directly draw, and the drawing process is successfully applied to the preparation of the thermoelectric material by sealing a bulk n-type bismuth telluride-based thermoelectric material into a copper pipe with excellent ductility, heating and then drawing; 2. the drawing deformation of the brittle material is realized, and the thermoelectric material can be rapidly prepared in batch by the drawing process due to rapid induction heating, so that the method has very high practical value; 3. the deformation of the material is large in the drawing process, the recrystallization is sufficient, the thermoelectric material with good orientation and fine and uniform grains can be obtained, and the mechanical property and thermoelectric property of the final material are obviously improved; 4. the copper shelter adopted by the invention can perform diffusion reaction with bismuth telluride material at high temperature, cu element is easy to diffuse into the Te-Te basal plane of bismuth telluride crystal lattice, and the formation energy of Te vacancy can be increased to inhibit Te vacancy and Bi Te The formation of the inversion defect reduces the donor-like effect, thereby improving the thermoelectric performance repeatability of the n-type bismuth telluride alloy; 5. the drawing process is a brand new production process applied to the field of bismuth telluride-based thermoelectric materials, and has reference value for preparing thermoelectric materials of other systems and other functional materials.
Drawings
FIG. 1 is resistivity in an embodiment;
fig. 2 is a seebeck coefficient in the example;
FIG. 3 is thermal conductivity in an example;
fig. 4 shows zT values in the examples.
Detailed Description
The present invention will be described in detail with reference to the following examples, but the present invention is not limited to the following examples.
Example 1
According to Bi 2 Te 2.7 Se 0.3 Proportioning, crushing the crystal bar into powder after smelting, sintering the powder into cylindrical block materials with the diameter of 90mm by adopting SPS, and filling the prepared initial block materials into a circular copper pipe with the diameter of 90 mm. Uniformly coating a layer of lubricating oil on the inner wall of the drawing die to lead one end of the copper pipe to be pulledThe rod was fixed and then the copper tube at the die inlet was heated to a temperature of about 400 c and drawing was started at a rate of about 2 cm/min. Drawing for 2 times, wherein the inner diameter of the 1 st-pass die hole is 60mm, and the inner diameter of the 2 nd-pass die hole is 30mm, namely the total elongation coefficient is 9. After the drawing is finished, the strength and the thermoelectric performance of the material are tested, the bending strength reaches 65Mpa, and the maximum ZT value reaches 1.04.
Example 2
According to Bi 2 Te 2.79 Se 0.21 Proportioning, crushing the crystal bar into powder after smelting, sintering the powder into cylindrical block materials with the diameter of 90mm by adopting SPS, and filling the prepared initial block materials into a circular copper pipe with the diameter of 90 mm. And uniformly coating a layer of lubricating oil on the inner wall of the drawing die, fixing one end of the copper pipe with the drawing rod, heating the copper pipe at the inlet of the die, and drawing at a speed of 2cm/min when the temperature is raised to 430 ℃. The drawing was performed for 2 passes, the inner diameter of the 1 st pass die hole was 60mm, and the inner diameter of the 2 nd pass die hole was 25mm, i.e., the total elongation coefficient was 12.96. After the drawing is finished, the strength and the thermoelectric performance of the material are tested, the bending strength reaches 72Mpa, and the maximum ZT value reaches 1.08.
Example 3
According to Bi 2 Te 2.7 Se 0.3 Proportioning, crushing the crystal bar into powder after smelting, sintering the powder into cylindrical block materials with the diameter of 80mm by adopting SPS, and filling the prepared initial block materials into a circular copper pipe with the diameter of 80 mm. And uniformly coating a layer of lubricating oil on the inner wall of the drawing die, fixing one end of the copper pipe with the drawing rod, heating the copper pipe at the inlet of the die, and drawing at a speed of 5cm/min when the temperature is raised to 430 ℃. The drawing was performed for 2 passes, the inner diameter of the 1 st pass die hole was 60mm, and the inner diameter of the 2 nd pass die hole was 30mm, i.e., the total elongation coefficient was 7.11. After the drawing is finished, the strength and the thermoelectric performance of the material are tested, the bending strength reaches 80Mpa, and the maximum ZT value reaches 1.13.
Claims (7)
1. A method for preparing an n-type bismuth telluride-based thermoelectric material by a drawing process is characterized by comprising the following specific steps:
step 1, bi, te and Se are used as raw materials according to the stoichiometric ratio of Bi 2 Te 3-x Se x Preparing materials, wherein x is more than or equal to 0.15 and less than or equal to 0.6, smelting to prepare a crystal bar, crushing the crystal bar to prepare powder, and performing hot press sintering or SPS sintering on the powder to prepare a block;
step 2, loading the block prepared in the step 1 into a copper pipe and sealing the copper pipe;
step 3, fixing one end of the copper pipe on a traction rod, heating the copper pipe at the inlet of the die, and finally controlling the temperature to be any temperature point within the range of 350-520 ℃ and then drawing, wherein the drawing speed is 1 cm/min-10 cm/min, drawing is performed for 1-3 times, and the final extension coefficient is controlled to be 6-25; in the drawing process, the deformation of the material is large, the recrystallization is sufficient, the copper shelter and the bismuth telluride material are subjected to diffusion reaction at high temperature, cu element is diffused between Te-Te basal planes of bismuth telluride crystal lattice, and the formation of Te vacancy is increased to inhibit Te vacancy and Bi Te The formation of inversion defects reduces donor-like effects;
and step 4, taking out the substance obtained by drawing to obtain the n-type bismuth telluride-based thermoelectric material.
2. The method for preparing an n-type bismuth telluride-based thermoelectric material by a drawing process according to claim 1, wherein: in the step 1, the purity of Bi, te and Se is more than 99.99 percent.
3. The method for preparing an n-type bismuth telluride-based thermoelectric material by a drawing process according to claim 1, wherein: the smelting temperature in the step 1 is 590-850 ℃.
4. The method for preparing an n-type bismuth telluride-based thermoelectric material by a drawing process according to claim 1, wherein: and 2, the copper pipe is made of copper or copper alloy.
5. The method for preparing an n-type bismuth telluride-based thermoelectric material by a drawing process according to claim 1, wherein: in the step 3, the die is a drawing die with the inclination angle of the die hole wall of 5-30 degrees.
6. The method for preparing an n-type bismuth telluride-based thermoelectric material by a drawing process according to claim 1, wherein: the heating mode in the step 3 is medium frequency induction heating.
7. The method for preparing an n-type bismuth telluride-based thermoelectric material by a drawing process according to claim 1, wherein: in the drawing process in the step 3, the inner diameters of the die holes used in each drawing are different, and the inner diameters of the die holes used in the last drawing are smaller than those of the die holes used in the previous drawing.
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|---|---|---|---|
| CN202210837619.2A CN115196602B (en) | 2022-07-15 | 2022-07-15 | Method for preparing n-type bismuth telluride-based thermoelectric material by drawing process |
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| CN202210837619.2A CN115196602B (en) | 2022-07-15 | 2022-07-15 | Method for preparing n-type bismuth telluride-based thermoelectric material by drawing process |
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| CN115196602A CN115196602A (en) | 2022-10-18 |
| CN115196602B true CN115196602B (en) | 2024-01-09 |
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Citations (7)
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|---|---|---|---|---|
| GB973756A (en) * | 1960-11-21 | 1964-10-28 | Westinghouse Electric Corp | Process for preparing a thermoelectric material |
| CN102132430A (en) * | 2008-08-11 | 2011-07-20 | 三星电子株式会社 | Anisotropically elongated thermoelectric material, process for preparing the same, and device comprising the material |
| WO2012138979A2 (en) * | 2011-04-08 | 2012-10-11 | The Trustees Of Boston College | Thermoelectric materials and methods for synthesis thereof |
| CN107833695A (en) * | 2017-10-30 | 2018-03-23 | 西北有色金属研究院 | A kind of MgB2The preparation method of multi-core superconducting wire rod |
| CN110002412A (en) * | 2019-04-22 | 2019-07-12 | 武汉科技大学 | A kind of preparation method of preferred orientation N-shaped bismuth telluride-base polycrystalline bulk thermoelectric material |
| CN111875381A (en) * | 2020-08-03 | 2020-11-03 | 深圳见炬科技有限公司 | Preparation method of N-type bismuth telluride thermoelectric block material |
| CN114031046A (en) * | 2021-10-29 | 2022-02-11 | 武汉理工大学 | Fine-grain strong-orientation n-type Bi without donor-like effect2Te3Method for preparing base thermoelectric material |
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2022
- 2022-07-15 CN CN202210837619.2A patent/CN115196602B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB973756A (en) * | 1960-11-21 | 1964-10-28 | Westinghouse Electric Corp | Process for preparing a thermoelectric material |
| CN102132430A (en) * | 2008-08-11 | 2011-07-20 | 三星电子株式会社 | Anisotropically elongated thermoelectric material, process for preparing the same, and device comprising the material |
| WO2012138979A2 (en) * | 2011-04-08 | 2012-10-11 | The Trustees Of Boston College | Thermoelectric materials and methods for synthesis thereof |
| CN107833695A (en) * | 2017-10-30 | 2018-03-23 | 西北有色金属研究院 | A kind of MgB2The preparation method of multi-core superconducting wire rod |
| CN110002412A (en) * | 2019-04-22 | 2019-07-12 | 武汉科技大学 | A kind of preparation method of preferred orientation N-shaped bismuth telluride-base polycrystalline bulk thermoelectric material |
| CN111875381A (en) * | 2020-08-03 | 2020-11-03 | 深圳见炬科技有限公司 | Preparation method of N-type bismuth telluride thermoelectric block material |
| CN114031046A (en) * | 2021-10-29 | 2022-02-11 | 武汉理工大学 | Fine-grain strong-orientation n-type Bi without donor-like effect2Te3Method for preparing base thermoelectric material |
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