GB831816A - Improvements in semi-conductive devices - Google Patents
Improvements in semi-conductive devicesInfo
- Publication number
- GB831816A GB831816A GB6435/57A GB643557A GB831816A GB 831816 A GB831816 A GB 831816A GB 6435/57 A GB6435/57 A GB 6435/57A GB 643557 A GB643557 A GB 643557A GB 831816 A GB831816 A GB 831816A
- Authority
- GB
- United Kingdom
- Prior art keywords
- envelope
- semi
- feb
- moist
- junction transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 1
- 229910000039 hydrogen halide Inorganic materials 0.000 abstract 1
- 239000012433 hydrogen halide Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL350722X | 1956-02-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB831816A true GB831816A (en) | 1960-03-30 |
Family
ID=19785028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB6435/57A Expired GB831816A (en) | 1956-02-29 | 1957-02-26 | Improvements in semi-conductive devices |
Country Status (7)
Country | Link |
---|---|
US (1) | US2887629A (enrdf_load_stackoverflow) |
BE (1) | BE555371A (enrdf_load_stackoverflow) |
CH (1) | CH350722A (enrdf_load_stackoverflow) |
DE (1) | DE1052573B (enrdf_load_stackoverflow) |
FR (1) | FR1167318A (enrdf_load_stackoverflow) |
GB (1) | GB831816A (enrdf_load_stackoverflow) |
NL (1) | NL95308C (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE566430A (enrdf_load_stackoverflow) * | 1957-04-05 | |||
US3281915A (en) * | 1963-04-02 | 1966-11-01 | Rca Corp | Method of fabricating a semiconductor device |
DE1260445B (de) * | 1965-03-08 | 1968-02-08 | Siemens Ag | Verfahren zum Eindiffundieren von gasfoermigem Dotierungsmaterial in einen Halbleiterkristall |
DE1764096A1 (de) * | 1967-04-04 | 1971-05-27 | Marconi Co Ltd | Oberflaechen-Feldeffekt-Transistor |
US3556880A (en) * | 1968-04-11 | 1971-01-19 | Rca Corp | Method of treating semiconductor devices to improve lifetime |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2812480A (en) * | 1954-06-23 | 1957-11-05 | Rca Corp | Method of treating semi-conductor devices and devices produced thereby |
-
1956
- 1956-02-29 NL NL205007A patent/NL95308C/xx active
-
1957
- 1957-02-13 US US639951A patent/US2887629A/en not_active Expired - Lifetime
- 1957-02-26 CH CH350722D patent/CH350722A/de unknown
- 1957-02-26 GB GB6435/57A patent/GB831816A/en not_active Expired
- 1957-02-26 DE DEN13359A patent/DE1052573B/de active Pending
- 1957-02-27 BE BE555371A patent/BE555371A/xx unknown
- 1957-02-28 FR FR1167318D patent/FR1167318A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1167318A (fr) | 1958-11-24 |
CH350722A (de) | 1960-12-15 |
NL205007A (enrdf_load_stackoverflow) | 1959-12-15 |
NL95308C (enrdf_load_stackoverflow) | 1960-09-15 |
US2887629A (en) | 1959-05-19 |
DE1052573B (de) | 1959-03-12 |
BE555371A (enrdf_load_stackoverflow) | 1957-08-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB959447A (en) | Semiconductor devices | |
GB876819A (en) | Method of producing semiconductor devices | |
GB669399A (en) | Improvements in semi-conductive alloys and devices utilizing them | |
GB1025984A (en) | The production of a silicon body with a pn-junction in it | |
GB831816A (en) | Improvements in semi-conductive devices | |
GB1441739A (en) | High-temperature sensing elements | |
GB955018A (en) | Low capacitance semiconductor devices | |
GB518455A (en) | Improvements in high-pressure metal-vapour electric discharge lamps | |
GB848619A (en) | Improvements in or relating to the fabrication of semiconductor rectifiers | |
GB983266A (en) | Semiconductor switching devices | |
GB859025A (en) | Improvements in or relating to electrical devices having hermetically sealed envelopes | |
GB968106A (en) | Improvements in or relating to semiconductor devices | |
GB831815A (en) | Improvements in semi-conductive devices | |
GB818464A (en) | Improvements in or relating to semiconductor devices | |
GB928894A (en) | Improvements in or relating to methods of manufacturing semi-conductor devices | |
GB849860A (en) | Improvements in or relating to semi-conductor rectifier assemblies | |
GB1299811A (en) | Semiconductor integrated circuit device | |
GB728940A (en) | Improvements in and relating to methods of making broad area semi-conductor devices | |
GB726913A (en) | Improvements in or relating to semi-conductor amplifiers and transistors | |
JPS51114875A (en) | Semiconductor device manufacturing method | |
US2916407A (en) | Surface treatment of silicon | |
GB890830A (en) | A glass sealed type semiconductor device | |
GB954577A (en) | Methods of treating bodies of gallium arsenide | |
GB995527A (en) | Alloy-diffused transistor | |
GB577738A (en) | Improvements relating to sealing conductors through exhaust tubes of evacuated vitreous envelopes |