GB798359A - Improvements in or relating to p-i-n rectifiers - Google Patents

Improvements in or relating to p-i-n rectifiers

Info

Publication number
GB798359A
GB798359A GB31951/55A GB3195155A GB798359A GB 798359 A GB798359 A GB 798359A GB 31951/55 A GB31951/55 A GB 31951/55A GB 3195155 A GB3195155 A GB 3195155A GB 798359 A GB798359 A GB 798359A
Authority
GB
United Kingdom
Prior art keywords
rectifier
zones
impurity concentration
nov
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31951/55A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB798359A publication Critical patent/GB798359A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10P32/00—
    • H10P95/50—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB31951/55A 1954-11-08 1955-11-08 Improvements in or relating to p-i-n rectifiers Expired GB798359A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES41476A DE1012697B (de) 1954-11-08 1954-11-08 p-s-n- und p-i-n-Gleichrichter

Publications (1)

Publication Number Publication Date
GB798359A true GB798359A (en) 1958-07-16

Family

ID=7484001

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31951/55A Expired GB798359A (en) 1954-11-08 1955-11-08 Improvements in or relating to p-i-n rectifiers

Country Status (5)

Country Link
CH (1) CH338244A (enExample)
DE (1) DE1012697B (enExample)
FR (1) FR1140397A (enExample)
GB (1) GB798359A (enExample)
NL (2) NL104352C (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL239515A (enExample) * 1958-06-18
US2997604A (en) * 1959-01-14 1961-08-22 Shockley William Semiconductive device and method of operating same
DE1093021B (de) * 1959-01-24 1960-11-17 Telefunken Gmbh Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen

Also Published As

Publication number Publication date
NL104352C (enExample)
NL201810A (enExample)
CH338244A (de) 1959-05-15
DE1012697B (de) 1957-07-25
FR1140397A (fr) 1957-07-19

Similar Documents

Publication Publication Date Title
GB790387A (en) Circuit arrangements utilizing semiconductive devices and methods for making such devices
IE32729B1 (en) Drift field thyristor
GB1400541A (en) Field effect transistors
GB971261A (en) Improvements in semiconductor devices
GB798359A (en) Improvements in or relating to p-i-n rectifiers
IE32763L (en) High speed switching rectifier
GB812554A (en) Improvements in transistors
GB988264A (en) Semi-conductor device with self-protection against overvoltage
GB687110A (en) Improvements in or relating to cage nuts
GB682206A (en) Improvements in or relating to amplifiers employing semi-conductors
JPS5382179A (en) Field effect transistor
JPS566471A (en) Field effect type thyristor
GB816476A (en) Improvements relating to semi-conductor rectifying circuit arrangements
GB1374682A (en) High power storage diodes
GB996721A (en) Improvements in and relating to semiconductor devices
GB1239595A (enExample)
JPS647447A (en) Current limiting device
JPS54887A (en) Two-way thyristor
JPS5772389A (en) Constant-voltage diode
GB751112A (en) Improvements in or relating to amplifying circuits embodying transistors and discharge tubes
JPS6489920A (en) Superconducting current limiting switchgear
GB915688A (en) Improvements in semiconductor devices
JPS567475A (en) Semiconductor device
JPS5215253A (en) Semiconductor amplifier
JPS5637676A (en) Field effect type semiconductor switching device