GB782664A - Semiconductive rectifying bodies - Google Patents
Semiconductive rectifying bodiesInfo
- Publication number
- GB782664A GB782664A GB6456/55A GB645655A GB782664A GB 782664 A GB782664 A GB 782664A GB 6456/55 A GB6456/55 A GB 6456/55A GB 645655 A GB645655 A GB 645655A GB 782664 A GB782664 A GB 782664A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- zone
- terminal
- resistivity
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 229910052698 phosphorus Inorganic materials 0.000 abstract 4
- 239000011574 phosphorus Substances 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41427554A | 1954-03-05 | 1954-03-05 | |
| US491908A US2811682A (en) | 1954-03-05 | 1955-03-03 | Silicon power rectifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB782664A true GB782664A (en) | 1957-09-11 |
Family
ID=27022485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6456/55A Expired GB782664A (en) | 1954-03-05 | 1955-03-04 | Semiconductive rectifying bodies |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2811682A (it) |
| BE (1) | BE536150A (it) |
| CH (1) | CH337583A (it) |
| DE (1) | DE1033786B (it) |
| FR (1) | FR1115845A (it) |
| GB (1) | GB782664A (it) |
| NL (2) | NL99247C (it) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL224458A (it) * | 1956-05-15 | |||
| BE557842A (it) * | 1956-06-01 | |||
| NL224227A (it) * | 1957-01-29 | |||
| FR1192082A (fr) * | 1957-03-20 | 1959-10-23 | Bosch Gmbh Robert | Semi-conducteur de puissance |
| US3051878A (en) * | 1957-05-02 | 1962-08-28 | Sarkes Tarzian | Semiconductor devices and method of manufacturing them |
| US2962394A (en) * | 1957-06-20 | 1960-11-29 | Motorola Inc | Process for plating a silicon base semiconductive unit with nickel |
| US2943268A (en) * | 1957-07-30 | 1960-06-28 | Texaco Inc | Automatic gain control amplifier circuit |
| US3007092A (en) * | 1957-12-23 | 1961-10-31 | Hughes Aircraft Co | Semiconductor devices |
| FR1214352A (fr) * | 1957-12-23 | 1960-04-08 | Hughes Aircraft Co | Dispositif semi-conducteur et procédé pour le fabriquer |
| DE1104075B (de) * | 1958-05-14 | 1961-04-06 | Telefunken Gmbh | Halbleitergleichrichter, insbesondere Hochfrequenzgleichrichter, mit einer n np- bzw. p pn-Folge der Halbleiterzonen im Halbleiterkoerper und Verfahren zu seiner Herstellung |
| NL239515A (it) * | 1958-06-18 | |||
| US3021595A (en) * | 1958-07-02 | 1962-02-20 | Texas Instruments Inc | Ohmic contacts for silicon conductor devices and method for making |
| US2937963A (en) * | 1958-07-14 | 1960-05-24 | Int Rectifier Corp | Temperature compensating zener diode construction |
| US3116442A (en) * | 1959-07-27 | 1963-12-31 | Link Belt Co | Silicon rectifier assembly comprising a heat conductive mounting base |
| DE1208412B (de) * | 1959-11-13 | 1966-01-05 | Siemens Ag | Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE489418A (it) * | 1948-06-26 | |||
| US2561411A (en) * | 1950-03-08 | 1951-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
| BE506280A (it) * | 1950-10-10 | |||
| BE525428A (it) * | 1952-12-30 |
-
0
- BE BE536150D patent/BE536150A/xx unknown
- NL NL193595D patent/NL193595A/xx unknown
- NL NL99247D patent/NL99247C/xx active
-
1954
- 1954-12-14 FR FR1115845D patent/FR1115845A/fr not_active Expired
-
1955
- 1955-01-15 DE DEW15753A patent/DE1033786B/de active Pending
- 1955-03-03 US US491908A patent/US2811682A/en not_active Expired - Lifetime
- 1955-03-04 GB GB6456/55A patent/GB782664A/en not_active Expired
- 1955-03-04 CH CH337583D patent/CH337583A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL193595A (it) | |
| BE536150A (it) | |
| FR1115845A (fr) | 1956-04-30 |
| NL99247C (it) | |
| US2811682A (en) | 1957-10-29 |
| CH337583A (fr) | 1959-04-15 |
| DE1033786B (de) | 1958-07-10 |
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