GB761050A - Improvements in or relating to methods and means for producing phosphors - Google Patents

Improvements in or relating to methods and means for producing phosphors

Info

Publication number
GB761050A
GB761050A GB28047/52A GB2804752A GB761050A GB 761050 A GB761050 A GB 761050A GB 28047/52 A GB28047/52 A GB 28047/52A GB 2804752 A GB2804752 A GB 2804752A GB 761050 A GB761050 A GB 761050A
Authority
GB
United Kingdom
Prior art keywords
vessel
iii
pict
capillary
stilbene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28047/52A
Inventor
Ruth Lapage
Samuel Keith Hutchinson
Kenneth Thomas Bartlett Scott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Atomic Energy Authority
Original Assignee
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Atomic Energy Authority filed Critical UK Atomic Energy Authority
Priority to GB28047/52A priority Critical patent/GB761050A/en
Publication of GB761050A publication Critical patent/GB761050A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54Organic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Trans-stilbene is prepared by the reduction of benzoin and recrystallization twice from ethanol and once from trichlorethylene. To reduce the benzoin content the ethanolic solution is treated with a mixture of hydroxylamine hydrochloride and sodium acetate to form benzoin oxime which remains in solution. Further purification may be obtained by crystallizing from the melt or scrubbing with n-pentane and also by distillation at about 180 DEG C. and 2 mm. of mercury pressure. The stilbene is subsequently crystallized from the melt to form single crystals (see Group III).ALSO:<PICT:0761050/III/1> <PICT:0761050/III/2> <PICT:0761050/III/3> <PICT:0761050/III/4> <PICT:0761050/III/5> <PICT:0761050/III/6> Single crystals of substances, e.g. stilbene, tolane, naphthalene and anthracene, suitable as phosphors for measuring nuclear radiation, are grown from the melt by passing vessels containing the substance and of the shape shown vertically downward through a furnace while initiating crystallization at the apex of the cone or the extremity of the capillary depending therefrom. The baffles 3, 8, 9, 17, 23 and/or the capillaries 4, 14 or 24 prevent entry into the main body of the liquid in the vessel of more than one growing crystal. The orifices in the baffles and the diameters of the capillary tubes are approximately 1 mm. in size. In the vessel of Fig. 2 the line joining the orifices in the baffles 8, 9 makes an angle with the wall of the cylindrical part of the vessel. A change in orientation of the growing crystal in a bent capillary may be obtained by suitable choice of freezing rate. In an example purified stilbene is crystallized in a vessel according to the invention by supporting the vessel in a brass cup carried by a screwed brass rod, the cup being insulated from the vessel and the tip of the vessel touching the rod, the rod being moved downwards by a threaded sprocket at 2.5 to 3 inches per day to cause the vessel to move through a furance. A temperature gradient of 20 DEG C. per inch is maintained between the upper and lower parts of the furnace, the air temperature in the upper part being 140 DEG C. \sB 2 DEG C. and in the lower part 100 DEG C. \sB 2 DEG C. The orientation of the crystal grown in a vessel having a baffle wth a bent capillary attached depends on the angle at which the capillary joins the baffle.
GB28047/52A 1952-11-07 1952-11-07 Improvements in or relating to methods and means for producing phosphors Expired GB761050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB28047/52A GB761050A (en) 1952-11-07 1952-11-07 Improvements in or relating to methods and means for producing phosphors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB28047/52A GB761050A (en) 1952-11-07 1952-11-07 Improvements in or relating to methods and means for producing phosphors

Publications (1)

Publication Number Publication Date
GB761050A true GB761050A (en) 1956-11-07

Family

ID=10269402

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28047/52A Expired GB761050A (en) 1952-11-07 1952-11-07 Improvements in or relating to methods and means for producing phosphors

Country Status (1)

Country Link
GB (1) GB761050A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4940073A (en) * 1989-07-19 1990-07-10 Pcc Airfoils, Inc. Mold for casting a single crystal metal article
US5062469A (en) * 1989-07-19 1991-11-05 Pcc Airfoils, Inc. Mold and method for casting a single crystal metal article
FR2869327A1 (en) * 2004-04-22 2005-10-28 Univ Claude Bernard Lyon CUPPER AND METHOD OF GROWING MASSIVE CRYSTALS AND, IN PARTICULAR, CAF2 MONOCRYSTALS

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4940073A (en) * 1989-07-19 1990-07-10 Pcc Airfoils, Inc. Mold for casting a single crystal metal article
US5062469A (en) * 1989-07-19 1991-11-05 Pcc Airfoils, Inc. Mold and method for casting a single crystal metal article
FR2869327A1 (en) * 2004-04-22 2005-10-28 Univ Claude Bernard Lyon CUPPER AND METHOD OF GROWING MASSIVE CRYSTALS AND, IN PARTICULAR, CAF2 MONOCRYSTALS
WO2005108653A1 (en) * 2004-04-22 2005-11-17 Universite Claude Bernard Lyon I Crucible and method for growing solid crystals and in particular single crystals of caf2

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