FR2869327A1 - CUPPER AND METHOD OF GROWING MASSIVE CRYSTALS AND, IN PARTICULAR, CAF2 MONOCRYSTALS - Google Patents

CUPPER AND METHOD OF GROWING MASSIVE CRYSTALS AND, IN PARTICULAR, CAF2 MONOCRYSTALS

Info

Publication number
FR2869327A1
FR2869327A1 FR0404276A FR0404276A FR2869327A1 FR 2869327 A1 FR2869327 A1 FR 2869327A1 FR 0404276 A FR0404276 A FR 0404276A FR 0404276 A FR0404276 A FR 0404276A FR 2869327 A1 FR2869327 A1 FR 2869327A1
Authority
FR
France
Prior art keywords
monocrystals
cupper
caf2
receptacle
massive crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR0404276A
Other languages
French (fr)
Inventor
Keirreddine Lebbou
Christian Pedrini
Olivier Tillement
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Claude Bernard Lyon 1 UCBL
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Claude Bernard Lyon 1 UCBL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Claude Bernard Lyon 1 UCBL filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR0404276A priority Critical patent/FR2869327A1/en
Priority to US11/109,650 priority patent/US20050241570A1/en
Priority to PCT/FR2005/000987 priority patent/WO2005108653A1/en
Publication of FR2869327A1 publication Critical patent/FR2869327A1/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un creuset (I) adapté pour la croissance d'un cristal massif à partir d'une matière première adéquate, comprenant un réceptacle (1) destiné à accueillir le cristal massif, caractérisé en ce qu'il comprend, en outre, sous le réceptacle (1), une succession verticale d'au moins deux conteneurs (31, 32, 33, 3n), chaque conteneur étant relié au conteneur suivant, situé au dessus de lui, par une zone de restriction (41, 42, 43, 4n), le conteneur supérieur (33, 3n) étant connecté, par une zone de restriction (43, 4n), au réceptacle (1), ainsi qu'un procédé de croissance mettant en oeuvre un tel procédé.The invention relates to a crucible (I) adapted for the growth of a solid crystal from a suitable raw material, comprising a receptacle (1) intended to receive the bulk crystal, characterized in that it comprises, in addition under the receptacle (1), a vertical succession of at least two containers (31, 32, 33, 3n), each container being connected to the next container, located above it, by a restriction zone (41, 42 , 43, 4n), the upper container (33, 3n) being connected, by a restriction zone (43, 4n), to the receptacle (1), as well as a growth method implementing such a method.

FR0404276A 2004-04-22 2004-04-22 CUPPER AND METHOD OF GROWING MASSIVE CRYSTALS AND, IN PARTICULAR, CAF2 MONOCRYSTALS Pending FR2869327A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0404276A FR2869327A1 (en) 2004-04-22 2004-04-22 CUPPER AND METHOD OF GROWING MASSIVE CRYSTALS AND, IN PARTICULAR, CAF2 MONOCRYSTALS
US11/109,650 US20050241570A1 (en) 2004-04-22 2005-04-20 Crucible and method for growing large crystals, in particular CaF2 monocrystals
PCT/FR2005/000987 WO2005108653A1 (en) 2004-04-22 2005-04-21 Crucible and method for growing solid crystals and in particular single crystals of caf2

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0404276A FR2869327A1 (en) 2004-04-22 2004-04-22 CUPPER AND METHOD OF GROWING MASSIVE CRYSTALS AND, IN PARTICULAR, CAF2 MONOCRYSTALS

Publications (1)

Publication Number Publication Date
FR2869327A1 true FR2869327A1 (en) 2005-10-28

Family

ID=34944954

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0404276A Pending FR2869327A1 (en) 2004-04-22 2004-04-22 CUPPER AND METHOD OF GROWING MASSIVE CRYSTALS AND, IN PARTICULAR, CAF2 MONOCRYSTALS

Country Status (2)

Country Link
FR (1) FR2869327A1 (en)
WO (1) WO2005108653A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103374755A (en) * 2012-04-28 2013-10-30 洛阳高科钼钨材料有限公司 Non-integrated crucible

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB761050A (en) * 1952-11-07 1956-11-07 Atomic Energy Authority Uk Improvements in or relating to methods and means for producing phosphors
US4412577A (en) * 1982-01-27 1983-11-01 United Technologies Corporation Control of seed melt-back during directional solidification of metals
JPH07101800A (en) * 1993-09-30 1995-04-18 Res Inst Electric Magnetic Alloys Production of i-iii-vi2 compound single crystal
FR2734189A1 (en) * 1989-05-24 1996-11-22 Snecma Compact selector for single crystal growth used esp. for casting single crystal superalloy turbine vane
US20020174825A1 (en) * 2001-05-18 2002-11-28 Gunther Wehrhan Method of growing oriented single crystals with reuseable crystal seeds or crystal nuclei
US20020189527A1 (en) * 2001-03-29 2002-12-19 Meyer-Fredholm Michele M. L. Preparation of crystals
US20030221607A1 (en) * 2002-05-31 2003-12-04 Garibin Evgeny A. Process for growing of optical fluorite single crystals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2861240B2 (en) * 1990-04-25 1999-02-24 石川島播磨重工業株式会社 Crucible for single crystal growth

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB761050A (en) * 1952-11-07 1956-11-07 Atomic Energy Authority Uk Improvements in or relating to methods and means for producing phosphors
US4412577A (en) * 1982-01-27 1983-11-01 United Technologies Corporation Control of seed melt-back during directional solidification of metals
FR2734189A1 (en) * 1989-05-24 1996-11-22 Snecma Compact selector for single crystal growth used esp. for casting single crystal superalloy turbine vane
JPH07101800A (en) * 1993-09-30 1995-04-18 Res Inst Electric Magnetic Alloys Production of i-iii-vi2 compound single crystal
US20020189527A1 (en) * 2001-03-29 2002-12-19 Meyer-Fredholm Michele M. L. Preparation of crystals
US20020174825A1 (en) * 2001-05-18 2002-11-28 Gunther Wehrhan Method of growing oriented single crystals with reuseable crystal seeds or crystal nuclei
US20030221607A1 (en) * 2002-05-31 2003-12-04 Garibin Evgeny A. Process for growing of optical fluorite single crystals

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 0161, no. 48 (C - 0928) 13 April 1992 (1992-04-13) *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 07 31 August 1995 (1995-08-31) *

Also Published As

Publication number Publication date
WO2005108653A1 (en) 2005-11-17

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