GB724930A - Manufacture of signal translating devices including silicon bodies - Google Patents
Manufacture of signal translating devices including silicon bodiesInfo
- Publication number
- GB724930A GB724930A GB3401/53A GB340153A GB724930A GB 724930 A GB724930 A GB 724930A GB 3401/53 A GB3401/53 A GB 3401/53A GB 340153 A GB340153 A GB 340153A GB 724930 A GB724930 A GB 724930A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- wire
- gold
- block
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 12
- 229910052710 silicon Inorganic materials 0.000 title abstract 12
- 239000010703 silicon Substances 0.000 title abstract 12
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 230000005496 eutectics Effects 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000011253 protective coating Substances 0.000 abstract 1
- 230000000284 resting effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Resistance Heating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US270370A US2757324A (en) | 1952-02-07 | 1952-02-07 | Fabrication of silicon translating devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB724930A true GB724930A (en) | 1955-02-23 |
Family
ID=23031071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3401/53A Expired GB724930A (en) | 1952-02-07 | 1953-02-06 | Manufacture of signal translating devices including silicon bodies |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2757324A (OSRAM) |
| AT (1) | AT177475B (OSRAM) |
| BE (1) | BE517459A (OSRAM) |
| DE (1) | DE1027325B (OSRAM) |
| FR (1) | FR1070095A (OSRAM) |
| GB (1) | GB724930A (OSRAM) |
| NL (2) | NL91691C (OSRAM) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL92060C (OSRAM) * | 1953-10-26 | |||
| BE544843A (OSRAM) * | 1955-02-25 | |||
| NL212855A (OSRAM) * | 1955-03-10 | |||
| US3065534A (en) * | 1955-03-30 | 1962-11-27 | Itt | Method of joining a semiconductor to a conductor |
| DE1040697B (de) * | 1955-03-30 | 1958-10-09 | Siemens Ag | Verfahren zur Dotierung von Halbleiterkoerpern |
| US2906932A (en) * | 1955-06-13 | 1959-09-29 | Sprague Electric Co | Silicon junction diode |
| GB794128A (en) * | 1955-08-04 | 1958-04-30 | Gen Electric Co Ltd | Improvements in or relating to methods of forming a junction in a semiconductor |
| US2919386A (en) * | 1955-11-10 | 1959-12-29 | Hoffman Electronics Corp | Rectifier and method of making same |
| NL222571A (OSRAM) * | 1956-03-05 | 1900-01-01 | ||
| NL216614A (OSRAM) * | 1956-05-15 | |||
| DE1218066B (de) * | 1956-09-25 | 1966-06-02 | Siemens Ag | Herstellung von Zonen unterschiedlichen Leitungstypus in Halbleiterkoerpern unter Anwendung des Legierungsverfahrens |
| US2878432A (en) * | 1956-10-12 | 1959-03-17 | Rca Corp | Silicon junction devices |
| NL219101A (OSRAM) * | 1956-10-31 | 1900-01-01 | ||
| US2985550A (en) * | 1957-01-04 | 1961-05-23 | Texas Instruments Inc | Production of high temperature alloyed semiconductors |
| US2893901A (en) * | 1957-01-28 | 1959-07-07 | Sprague Electric Co | Semiconductor junction |
| NL224227A (OSRAM) * | 1957-01-29 | |||
| DE1282203B (de) * | 1957-06-24 | 1968-11-07 | Siemens Ag | Verfahren zum Herstellen einer insbesondere auf Strahlung ansprechenden Halbleiterkristall-anordnung mit pn-UEbergang und den pn-UEbergang gegen Feuchtigkeit schuetzender Huelle und danach hergestellte Halbleiteranordnung |
| NL218594A (OSRAM) * | 1957-07-01 | |||
| NL107716C (OSRAM) * | 1957-08-15 | 1900-01-01 | ||
| DE1165755B (de) * | 1957-09-26 | 1964-03-19 | Philco Corp Eine Ges Nach Den | Verfahren zur Befestigung von Zuleitungen an den Kontaktelektroden von Halbleiterkoerpern und Vorrichtung zur Durchfuehrung des Verfahrens |
| NL235479A (OSRAM) * | 1958-02-04 | 1900-01-01 | ||
| US2953673A (en) * | 1958-04-18 | 1960-09-20 | Bell Telephone Labor Inc | Method of joining wires |
| US2989671A (en) * | 1958-05-23 | 1961-06-20 | Pacific Semiconductors Inc | Voltage sensitive semiconductor capacitor |
| NL300609A (OSRAM) * | 1958-06-14 | 1967-06-26 | ||
| NL247987A (OSRAM) * | 1958-06-14 | |||
| US3012921A (en) * | 1958-08-20 | 1961-12-12 | Philco Corp | Controlled jet etching of semiconductor units |
| NL242895A (OSRAM) * | 1958-09-02 | |||
| US3073006A (en) * | 1958-09-16 | 1963-01-15 | Westinghouse Electric Corp | Method and apparatus for the fabrication of alloyed transistors |
| US3091849A (en) * | 1959-09-14 | 1963-06-04 | Pacific Semiconductors Inc | Method of bonding materials |
| US3127646A (en) * | 1959-10-06 | 1964-04-07 | Clevite Corp | Alloying fixtures |
| NL261654A (OSRAM) * | 1960-02-24 | |||
| NL261280A (OSRAM) * | 1960-02-25 | 1900-01-01 | ||
| US3025439A (en) * | 1960-09-22 | 1962-03-13 | Texas Instruments Inc | Mounting for silicon semiconductor device |
| NL280850A (OSRAM) * | 1961-07-12 | 1900-01-01 | ||
| BE627126A (OSRAM) * | 1962-01-15 | 1900-01-01 | ||
| NL288472A (OSRAM) * | 1962-02-02 | |||
| US3235945A (en) * | 1962-10-09 | 1966-02-22 | Philco Corp | Connection of semiconductor elements to thin film circuits using foil ribbon |
| US3434828A (en) * | 1963-02-01 | 1969-03-25 | Texas Instruments Inc | Gold alloy for attaching a lead to a semiconductor body |
| US3223820A (en) * | 1963-03-25 | 1965-12-14 | Matsuura Etsuyuki | Method of ohmically connecting filament to semiconducting material |
| US3617682A (en) * | 1969-06-23 | 1971-11-02 | Gen Electric | Semiconductor chip bonder |
| US4485290A (en) * | 1982-11-01 | 1984-11-27 | At&T Technologies, Inc. | Bonding a workpiece to a body |
| US4558200A (en) * | 1983-08-12 | 1985-12-10 | Eaton Corporation | Electrical lead termination |
| WO2018078642A1 (en) | 2016-10-24 | 2018-05-03 | Indian Institute Of Technology, Guwahati | A microfluidic electrical energy harvester |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB625195A (OSRAM) * | ||||
| US2329483A (en) * | 1938-05-27 | 1943-09-14 | Int Nickel Co | Bearing |
| US2226944A (en) * | 1938-10-27 | 1940-12-31 | Bell Telephone Labor Inc | Method of bonding dissimilar metals |
| US2402662A (en) * | 1941-05-27 | 1946-06-25 | Bell Telephone Labor Inc | Light-sensitive electric device |
| US2398449A (en) * | 1941-07-09 | 1946-04-16 | Bell Telephone Labor Inc | Method of making hermetic seals |
| US2406310A (en) * | 1944-02-11 | 1946-08-27 | Machlett Lab Inc | Beryllium brazing |
| US2646536A (en) * | 1946-11-14 | 1953-07-21 | Purdue Research Foundation | Rectifier |
| US2567970A (en) * | 1947-12-24 | 1951-09-18 | Bell Telephone Labor Inc | Semiconductor comprising silicon and method of making it |
| US2627010A (en) * | 1948-01-28 | 1953-01-27 | Metals & Controls Corp | Apparatus for soldering metal strips |
| US2534643A (en) * | 1948-12-11 | 1950-12-19 | Machlett Lab Inc | Method for brazing beryllium |
| US2685728A (en) * | 1949-02-21 | 1954-08-10 | Bell Telephone Labor Inc | Translating material and method of manufacture |
| US2627110A (en) * | 1949-04-12 | 1953-02-03 | Gen Electric | Method of bonding nickel structures |
| US2609428A (en) * | 1949-08-31 | 1952-09-02 | Rca Corp | Base electrodes for semiconductor devices |
| NL82014C (OSRAM) * | 1949-11-30 | |||
| US2654059A (en) * | 1951-05-26 | 1953-09-29 | Bell Telephone Labor Inc | Semiconductor signal translating device |
-
0
- NL NLAANVRAGE7714207,A patent/NL175652B/xx unknown
- BE BE517459D patent/BE517459A/xx unknown
- NL NL91691D patent/NL91691C/xx active
-
1952
- 1952-02-07 US US270370A patent/US2757324A/en not_active Expired - Lifetime
-
1953
- 1953-01-10 DE DEW10346A patent/DE1027325B/de active Pending
- 1953-01-21 AT AT177475D patent/AT177475B/de active
- 1953-01-26 FR FR1070095D patent/FR1070095A/fr not_active Expired
- 1953-02-06 GB GB3401/53A patent/GB724930A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL175652B (nl) | |
| FR1070095A (fr) | 1954-07-16 |
| NL91691C (OSRAM) | |
| US2757324A (en) | 1956-07-31 |
| AT177475B (de) | 1954-02-10 |
| DE1027325B (de) | 1958-04-03 |
| BE517459A (OSRAM) |
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