GB616812A - Method of manufacture of selenium rectifier elements - Google Patents

Method of manufacture of selenium rectifier elements

Info

Publication number
GB616812A
GB616812A GB3986/46A GB398646A GB616812A GB 616812 A GB616812 A GB 616812A GB 3986/46 A GB3986/46 A GB 3986/46A GB 398646 A GB398646 A GB 398646A GB 616812 A GB616812 A GB 616812A
Authority
GB
United Kingdom
Prior art keywords
selenium
heat treatment
manufacture
rectifier elements
selenium rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3986/46A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB616812A publication Critical patent/GB616812A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/044—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/048—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H10D48/049—Ageing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Physical Vapour Deposition (AREA)
GB3986/46A 1945-03-12 1946-02-08 Method of manufacture of selenium rectifier elements Expired GB616812A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US582278A US2457169A (en) 1945-03-12 1945-03-12 Method of manufacturing of rectifier elements

Publications (1)

Publication Number Publication Date
GB616812A true GB616812A (en) 1949-01-27

Family

ID=24328521

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3986/46A Expired GB616812A (en) 1945-03-12 1946-02-08 Method of manufacture of selenium rectifier elements

Country Status (6)

Country Link
US (1) US2457169A (enExample)
BE (1) BE468183A (enExample)
CH (1) CH259588A (enExample)
ES (1) ES173252A1 (enExample)
FR (1) FR923723A (enExample)
GB (1) GB616812A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976389C (de) * 1954-07-29 1963-08-22 Siemens Ag Verfahren zum elektrischen Formieren von Trockengleichrichterplatten, insbesondere Selengleichrichterplatten
DE976803C (de) * 1950-09-12 1964-05-21 Siemens Ag Vorrichtung zum Herstellen von Trockengleichrichterplatten

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE925847C (de) * 1949-10-31 1955-03-31 Licentia Gmbh Verfahren zum Herstellen von Selengleichrichtern
DE1035783B (de) * 1953-08-13 1958-08-07 Siemens Ag Verfahren zur Herstellung von Trockengleichrichterelementen
DE1041598B (de) * 1953-08-24 1958-10-23 Siemens Ag Verfahren zur Fertigung von Selengleichrichtern

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB302177A (enExample) * 1927-12-10 1929-12-12 Sueddeutsche Telefon-Apparate, Kabel- Und Drahtwerke, Aktiengesellschaft
NL46219C (enExample) * 1936-06-13
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
NL53118C (enExample) * 1938-07-14
NL96218C (enExample) * 1939-01-11
US2395259A (en) * 1942-10-24 1946-02-19 Bell Telephone Labor Inc Method of making dry rectifiers
US2356094A (en) * 1943-02-11 1944-08-15 Fed Telephone & Radio Corp Method of treating selenium elements
BE472806A (enExample) * 1943-08-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976803C (de) * 1950-09-12 1964-05-21 Siemens Ag Vorrichtung zum Herstellen von Trockengleichrichterplatten
DE976389C (de) * 1954-07-29 1963-08-22 Siemens Ag Verfahren zum elektrischen Formieren von Trockengleichrichterplatten, insbesondere Selengleichrichterplatten

Also Published As

Publication number Publication date
BE468183A (enExample) 1900-01-01
FR923723A (fr) 1947-07-16
CH259588A (de) 1949-01-31
US2457169A (en) 1948-12-28
ES173252A1 (es) 1946-05-16

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