FR923723A - Procédés de fabrication d'éléments redresseurs et analogues - Google Patents

Procédés de fabrication d'éléments redresseurs et analogues

Info

Publication number
FR923723A
FR923723A FR923723DA FR923723A FR 923723 A FR923723 A FR 923723A FR 923723D A FR923723D A FR 923723DA FR 923723 A FR923723 A FR 923723A
Authority
FR
France
Prior art keywords
manufacturing
methods
straightening elements
straightening
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
Arthur Joel Miller
Julius Fleisher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of FR923723A publication Critical patent/FR923723A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Gerontology & Geriatric Medicine (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
FR923723D 1945-03-12 1946-03-11 Procédés de fabrication d'éléments redresseurs et analogues Expired FR923723A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US582278A US2457169A (en) 1945-03-12 1945-03-12 Method of manufacturing of rectifier elements

Publications (1)

Publication Number Publication Date
FR923723A true FR923723A (fr) 1947-07-16

Family

ID=24328521

Family Applications (1)

Application Number Title Priority Date Filing Date
FR923723D Expired FR923723A (fr) 1945-03-12 1946-03-11 Procédés de fabrication d'éléments redresseurs et analogues

Country Status (6)

Country Link
US (1) US2457169A (fr)
BE (1) BE468183A (fr)
CH (1) CH259588A (fr)
ES (1) ES173252A1 (fr)
FR (1) FR923723A (fr)
GB (1) GB616812A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1035783B (de) * 1953-08-13 1958-08-07 Siemens Ag Verfahren zur Herstellung von Trockengleichrichterelementen
DE1041598B (de) * 1953-08-24 1958-10-23 Siemens Ag Verfahren zur Fertigung von Selengleichrichtern
DE976389C (de) * 1954-07-29 1963-08-22 Siemens Ag Verfahren zum elektrischen Formieren von Trockengleichrichterplatten, insbesondere Selengleichrichterplatten

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE925847C (de) * 1949-10-31 1955-03-31 Licentia Gmbh Verfahren zum Herstellen von Selengleichrichtern
NL111901C (fr) * 1950-09-12 1900-01-01

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB302177A (fr) * 1927-12-10 1929-12-12 Sueddeutsche Telefon-Apparate, Kabel- Und Drahtwerke, Aktiengesellschaft
NL46219C (fr) * 1936-06-13
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
NL53118C (fr) * 1938-07-14
NL96218C (fr) * 1939-01-11
US2395259A (en) * 1942-10-24 1946-02-19 Bell Telephone Labor Inc Method of making dry rectifiers
US2356094A (en) * 1943-02-11 1944-08-15 Fed Telephone & Radio Corp Method of treating selenium elements
BE472806A (fr) * 1943-08-21

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1035783B (de) * 1953-08-13 1958-08-07 Siemens Ag Verfahren zur Herstellung von Trockengleichrichterelementen
DE1041598B (de) * 1953-08-24 1958-10-23 Siemens Ag Verfahren zur Fertigung von Selengleichrichtern
DE976389C (de) * 1954-07-29 1963-08-22 Siemens Ag Verfahren zum elektrischen Formieren von Trockengleichrichterplatten, insbesondere Selengleichrichterplatten

Also Published As

Publication number Publication date
BE468183A (fr) 1900-01-01
CH259588A (de) 1949-01-31
GB616812A (en) 1949-01-27
ES173252A1 (es) 1946-05-16
US2457169A (en) 1948-12-28

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