GB516137A - Improvements in and relating to the manufacture of electrode systems of unsymmetrical conductivity - Google Patents

Improvements in and relating to the manufacture of electrode systems of unsymmetrical conductivity

Info

Publication number
GB516137A
GB516137A GB18434/38A GB1843438A GB516137A GB 516137 A GB516137 A GB 516137A GB 18434/38 A GB18434/38 A GB 18434/38A GB 1843438 A GB1843438 A GB 1843438A GB 516137 A GB516137 A GB 516137A
Authority
GB
United Kingdom
Prior art keywords
layer
metal
carbon
selenium
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18434/38A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB516137A publication Critical patent/GB516137A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01Manufacture or treatment
    • H10D48/04Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/042Preparation of foundation plates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/08Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/10Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Battery Electrode And Active Subsutance (AREA)
GB18434/38A 1937-06-25 1938-06-21 Improvements in and relating to the manufacture of electrode systems of unsymmetrical conductivity Expired GB516137A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEN40875A DE763103C (de) 1937-06-25 1937-06-25 Verfahren zum Aufbringen einer zusammenhaengenden, pulverfoermigen Schicht auf einen Metalltraeger in einem Sperrschichtelektrodensystem und gemaess diesem Verfahren hergestelltes Sperrschichtelektroden-system (Gleichrichter, Photozelle)

Publications (1)

Publication Number Publication Date
GB516137A true GB516137A (en) 1939-12-22

Family

ID=25760433

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18434/38A Expired GB516137A (en) 1937-06-25 1938-06-21 Improvements in and relating to the manufacture of electrode systems of unsymmetrical conductivity

Country Status (4)

Country Link
CH (1) CH208834A (enrdf_load_stackoverflow)
DE (1) DE763103C (enrdf_load_stackoverflow)
GB (1) GB516137A (enrdf_load_stackoverflow)
NL (1) NL53994C (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2462917A (en) * 1945-05-12 1949-03-01 Standard Telephones Cables Ltd Method of manufacturing rectifier elements
US2462906A (en) * 1943-05-01 1949-03-01 Standard Telephones Cables Ltd Manufacture of metal contact rectifiers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE295103C (enrdf_load_stackoverflow) *
DE534137C (de) * 1929-02-27 1931-09-25 Siemens Schuckertwerke Akt Ges Verfahren zur Herstellung einer elektrisch gut leitenden und mechanisch festen Verbindung zwischen einem auf der Oxydschicht mit Metallueberzug versehenen Metalloxydgleichrichter und einem die Stromzufuehrung zur Metalloxydschicht bewirkenden Leiter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2462906A (en) * 1943-05-01 1949-03-01 Standard Telephones Cables Ltd Manufacture of metal contact rectifiers
US2462917A (en) * 1945-05-12 1949-03-01 Standard Telephones Cables Ltd Method of manufacturing rectifier elements

Also Published As

Publication number Publication date
DE763103C (de) 1944-12-28
CH208834A (de) 1940-02-29
NL53994C (enrdf_load_stackoverflow) 1900-01-01

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