GB439457A - Improvements in or relating to electrical amplifiers and other control arrangements and devices - Google Patents

Improvements in or relating to electrical amplifiers and other control arrangements and devices

Info

Publication number
GB439457A
GB439457A GB6815/35A GB681535A GB439457A GB 439457 A GB439457 A GB 439457A GB 6815/35 A GB6815/35 A GB 6815/35A GB 681535 A GB681535 A GB 681535A GB 439457 A GB439457 A GB 439457A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
condenser
march
substances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6815/35A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB439457A publication Critical patent/GB439457A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G3/00—Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
    • H02G3/02—Details
    • H02G3/08—Distribution boxes; Connection or junction boxes
    • H02G3/081—Bases, casings or covers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Glass Compositions (AREA)
GB6815/35A 1934-03-02 1935-03-04 Improvements in or relating to electrical amplifiers and other control arrangements and devices Expired GB439457A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE439457X 1934-03-02

Publications (1)

Publication Number Publication Date
GB439457A true GB439457A (en) 1935-12-06

Family

ID=6507313

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6815/35A Expired GB439457A (en) 1934-03-02 1935-03-04 Improvements in or relating to electrical amplifiers and other control arrangements and devices

Country Status (3)

Country Link
BE (1) BE408194A (enrdf_load_stackoverflow)
FR (1) FR786454A (enrdf_load_stackoverflow)
GB (1) GB439457A (enrdf_load_stackoverflow)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524034A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductor materials
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
US2659774A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Bidirectional transistor amplifier
US2659773A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Inverted grounded emitter transistor amplifier
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2934723A (en) * 1956-10-24 1960-04-26 Bell Telephone Labor Inc Attenuator
US2935624A (en) * 1955-08-26 1960-05-03 Forman Ralph Electrostatically-controlled resistance tube
US2985783A (en) * 1956-07-30 1961-05-23 Westinghouse Electric Corp Thin screen members
US3001134A (en) * 1958-10-10 1961-09-19 Sylvania Electric Prod Semiconductor device
US3001135A (en) * 1958-05-21 1961-09-19 Sylvania Electric Prod Device for measuring electrical power
US3014188A (en) * 1958-09-12 1961-12-19 Westinghouse Electric Corp Variable q microwave cavity and microwave switching apparatus for use therewith
US3258663A (en) * 1961-08-17 1966-06-28 Solid state device with gate electrode on thin insulative film
US3289053A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
JPS5124884A (enrdf_load_stackoverflow) * 1974-08-23 1976-02-28 Hosiden Electronics Co

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE971775C (de) * 1942-09-22 1959-03-26 Hildegard Koepke Dr Einrichtung zur Verstaerkung elektrischer Stroeme und Spannungen
DE973206C (de) * 1949-05-31 1959-12-24 Siemens Ag Regelbarer Widerstand
US3648124A (en) * 1970-06-10 1972-03-07 Ibm Gated metal-semiconductor transition device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524034A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductor materials
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
DE966492C (de) * 1948-02-26 1957-08-14 Western Electric Co Elektrisch steuerbares Schaltelement aus Halbleitermaterial
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2659774A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Bidirectional transistor amplifier
US2659773A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Inverted grounded emitter transistor amplifier
US2935624A (en) * 1955-08-26 1960-05-03 Forman Ralph Electrostatically-controlled resistance tube
US2985783A (en) * 1956-07-30 1961-05-23 Westinghouse Electric Corp Thin screen members
US2934723A (en) * 1956-10-24 1960-04-26 Bell Telephone Labor Inc Attenuator
US3001135A (en) * 1958-05-21 1961-09-19 Sylvania Electric Prod Device for measuring electrical power
US3014188A (en) * 1958-09-12 1961-12-19 Westinghouse Electric Corp Variable q microwave cavity and microwave switching apparatus for use therewith
US3001134A (en) * 1958-10-10 1961-09-19 Sylvania Electric Prod Semiconductor device
US3258663A (en) * 1961-08-17 1966-06-28 Solid state device with gate electrode on thin insulative film
DE1464363B1 (de) * 1961-08-17 1970-09-24 Rca Corp Unipolartransistor
US3289053A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
JPS5124884A (enrdf_load_stackoverflow) * 1974-08-23 1976-02-28 Hosiden Electronics Co

Also Published As

Publication number Publication date
FR786454A (fr) 1935-09-03
BE408194A (enrdf_load_stackoverflow)

Similar Documents

Publication Publication Date Title
GB439457A (en) Improvements in or relating to electrical amplifiers and other control arrangements and devices
US2560792A (en) Electrolytic surface treatment of germanium
GB694023A (en) Electric circuit devices utilizing semiconductive materials
GB917055A (en) Improvements in or relating to refrigerant evaporators
US2773250A (en) Device for storing information
GB1065930A (en) Semi-conductor switching element
GB500344A (en) Improvements in and relating to dry surface-contact electric rectifiers
GB882179A (en) Electric condenser
GB1287930A (enrdf_load_stackoverflow)
US3449647A (en) Remote cutoff junction gate field effect transistor
US3701930A (en) Electrolytic transistor with collector in base-emitter current path
GB1206850A (en) Adaptive electronic circuit element and method of manufacture
GB1129272A (en) Improvements in and relating to metal-oxide-semiconductor capacitors
GB458889A (en) Improvements in or relating to dry electric rectifiers
GB488838A (en) Electrical temperature-responsive units
GB376107A (en) Improved electrode system formed by two electrodes consisting of different materialsand separated by an intermediate layer of a third material
GB985656A (enrdf_load_stackoverflow)
US3863167A (en) Parametric moving field amplifier
GB639509A (en) Improvements in or relating to electrical condenser combinations
GB454847A (en) Improved condensers, cables and other electrical devices comprising two conductors separated by a dielectric
GB601109A (en) Improvements in or relating to electric condenser systems
GB483336A (en) Improvements in or relating to electron discharge devices and circuit arrangements incorporating the same
GB595012A (en) Improvements in or relating to variable electrical condensers
GB1247985A (en) High frequency responsive semiconductive capacitor
GB1266706A (enrdf_load_stackoverflow)