GB2531485B - Systems and methods for bidirectional device fabrication - Google Patents

Systems and methods for bidirectional device fabrication

Info

Publication number
GB2531485B
GB2531485B GB1602488.7A GB201602488A GB2531485B GB 2531485 B GB2531485 B GB 2531485B GB 201602488 A GB201602488 A GB 201602488A GB 2531485 B GB2531485 B GB 2531485B
Authority
GB
United Kingdom
Prior art keywords
systems
methods
device fabrication
bidirectional device
bidirectional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1602488.7A
Other languages
English (en)
Other versions
GB201602488D0 (en
GB2531485A (en
GB2531485A8 (en
Inventor
A Blanchard Richard
C Alexander William
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ideal Power Inc
Original Assignee
Ideal Power Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/313,960 external-priority patent/US9029909B2/en
Application filed by Ideal Power Inc filed Critical Ideal Power Inc
Publication of GB201602488D0 publication Critical patent/GB201602488D0/en
Publication of GB2531485A publication Critical patent/GB2531485A/en
Application granted granted Critical
Publication of GB2531485B publication Critical patent/GB2531485B/en
Publication of GB2531485A8 publication Critical patent/GB2531485A8/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/101—Three-dimensional [3D] integrated devices comprising components on opposite major surfaces of semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H10D18/021—Manufacture or treatment of bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
GB1602488.7A 2013-12-11 2014-12-10 Systems and methods for bidirectional device fabrication Active GB2531485B (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361914491P 2013-12-11 2013-12-11
US201461924884P 2014-01-08 2014-01-08
US201461928644P 2014-01-17 2014-01-17
US201461929874P 2014-01-21 2014-01-21
US14/313,960 US9029909B2 (en) 2013-06-24 2014-06-24 Systems, circuits, devices, and methods with bidirectional bipolar transistors
PCT/US2014/069611 WO2015089227A1 (en) 2013-12-11 2014-12-10 Systems and methods for bidirectional device fabrication

Publications (4)

Publication Number Publication Date
GB201602488D0 GB201602488D0 (en) 2016-03-30
GB2531485A GB2531485A (en) 2016-04-20
GB2531485B true GB2531485B (en) 2016-06-22
GB2531485A8 GB2531485A8 (en) 2016-06-29

Family

ID=53371816

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1602488.7A Active GB2531485B (en) 2013-12-11 2014-12-10 Systems and methods for bidirectional device fabrication

Country Status (5)

Country Link
EP (1) EP3055884B8 (cg-RX-API-DMAC7.html)
JP (1) JP6542775B2 (cg-RX-API-DMAC7.html)
CN (1) CN106062958B (cg-RX-API-DMAC7.html)
GB (1) GB2531485B (cg-RX-API-DMAC7.html)
WO (1) WO2015089227A1 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109872979A (zh) * 2019-02-14 2019-06-11 南通通富微电子有限公司 一种扇出型封装器件
WO2025259387A1 (en) * 2024-06-11 2025-12-18 Ideal Power Inc. Methods of manufacturing bipolar junction devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014210072A1 (en) * 2013-06-24 2014-12-31 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors

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US5112761A (en) * 1990-01-10 1992-05-12 Microunity Systems Engineering Bicmos process utilizing planarization technique
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
JP2003158131A (ja) * 2001-09-04 2003-05-30 Sanken Electric Co Ltd 半導体素子の製造方法
JP2004119498A (ja) * 2002-09-24 2004-04-15 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
US7064069B2 (en) * 2003-10-21 2006-06-20 Micron Technology, Inc. Substrate thinning including planarization
DE102004005384B4 (de) * 2004-02-03 2006-10-26 De Doncker, Rik W., Prof. Dr. ir. Bidirektionales, MOS-gesteuertes Halbleiterbauelement, Verfahren zu seinem Betreiben, Verfahren zu seiner Herstellung und seine Verwendung
JP4791704B2 (ja) * 2004-04-28 2011-10-12 三菱電機株式会社 逆導通型半導体素子とその製造方法
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WO2011022442A2 (en) 2009-08-17 2011-02-24 Ideal Power Converters Inc. Power conversion with added pseudo-phase
EP2874297B1 (en) 2006-06-06 2023-09-27 Ideal Power Inc. Buck-Boost power converter
DE102007058952A1 (de) 2007-09-24 2009-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8093133B2 (en) * 2008-04-04 2012-01-10 Semiconductor Components Industries, Llc Transient voltage suppressor and methods
US8163624B2 (en) * 2008-07-30 2012-04-24 Bowman Ronald R Discrete semiconductor device and method of forming sealed trench junction termination
KR20120130158A (ko) 2009-06-29 2012-11-29 아이디얼 파워 컨버터스, 인코포레이티드 에너지 전송 리액턴스를 단락시키는 크로바 스위치를 이용한 전력 전송 장치, 방법, 및 시스템
EP2317553B1 (en) * 2009-10-28 2012-12-26 STMicroelectronics Srl Double-sided semiconductor structure and method for manufacturing the same
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CN102172826B (zh) * 2010-12-29 2012-11-28 杭州东华链条集团有限公司 一种正时链条的装配方法及装配装置
US20120279567A1 (en) 2011-02-18 2012-11-08 Ideal Power Converters Inc. Solar Energy System with Automatic Dehumidification of Electronics
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Patent Citations (2)

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WO2014210072A1 (en) * 2013-06-24 2014-12-31 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors
GB2522362A (en) * 2013-06-24 2015-07-22 Ideal Power Inc Systems, circuits, devices, and methods with bidirectional bipolar transistors

Also Published As

Publication number Publication date
GB201602488D0 (en) 2016-03-30
EP3055884A1 (en) 2016-08-17
EP3055884B8 (en) 2023-04-26
CN106062958A (zh) 2016-10-26
JP2017509136A (ja) 2017-03-30
CN106062958B (zh) 2019-11-19
GB2531485A (en) 2016-04-20
WO2015089227A1 (en) 2015-06-18
EP3055884A4 (en) 2016-12-07
GB2531485A8 (en) 2016-06-29
EP3055884B1 (en) 2023-03-22
JP6542775B2 (ja) 2019-07-10

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