GB2509680A - Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure - Google Patents

Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure Download PDF

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Publication number
GB2509680A
GB2509680A GB1408505.4A GB201408505A GB2509680A GB 2509680 A GB2509680 A GB 2509680A GB 201408505 A GB201408505 A GB 201408505A GB 2509680 A GB2509680 A GB 2509680A
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GB
United Kingdom
Prior art keywords
single crystalline
crystalline beam
method further
insulator
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB1408505.4A
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English (en)
Other versions
GB201408505D0 (en
Inventor
David L Harame
Anthony K Stamper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB201408505D0 publication Critical patent/GB201408505D0/en
Publication of GB2509680A publication Critical patent/GB2509680A/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0285—Vibration sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0064—Constructional details comprising semiconductor material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/241—Bulk-mode MEMS resonators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/304—Beam type
    • H10N30/306—Cantilevers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
GB1408505.4A 2011-11-11 2012-08-14 Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure Withdrawn GB2509680A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/294,603 US9105751B2 (en) 2011-11-11 2011-11-11 Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure
PCT/US2012/050743 WO2013070294A1 (en) 2011-11-11 2012-08-14 Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure

Publications (2)

Publication Number Publication Date
GB201408505D0 GB201408505D0 (en) 2014-06-25
GB2509680A true GB2509680A (en) 2014-07-09

Family

ID=48281029

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1408505.4A Withdrawn GB2509680A (en) 2011-11-11 2012-08-14 Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure

Country Status (6)

Country Link
US (2) US9105751B2 (ja)
JP (1) JP5957788B2 (ja)
CN (1) CN103947111B (ja)
DE (1) DE112012004719T5 (ja)
GB (1) GB2509680A (ja)
WO (1) WO2013070294A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9058455B2 (en) * 2012-01-20 2015-06-16 International Business Machines Corporation Backside integration of RF filters for RF front end modules and design structure
US9325294B2 (en) * 2013-03-15 2016-04-26 Resonant Inc. Microwave acoustic wave filters
CN105262455B (zh) * 2015-10-09 2018-07-31 锐迪科微电子（上海）有限公司 一种高可靠性的薄膜体声波谐振器及其制造方法
US10800649B2 (en) * 2016-11-28 2020-10-13 Analog Devices International Unlimited Company Planar processing of suspended microelectromechanical systems (MEMS) devices
US10439581B2 (en) * 2017-03-24 2019-10-08 Zhuhai Crystal Resonance Technologies Co., Ltd. Method for fabricating RF resonators and filters
US10439580B2 (en) * 2017-03-24 2019-10-08 Zhuhai Crystal Resonance Technologies Co., Ltd. Method for fabricating RF resonators and filters
US10389331B2 (en) * 2017-03-24 2019-08-20 Zhuhai Crystal Resonance Technologies Co., Ltd. Single crystal piezoelectric RF resonators and filters
US10189705B1 (en) 2017-10-25 2019-01-29 Globalfoundries Singapore Pte. Ltd. Monolithic integration of MEMS and IC devices
CN111371424A (zh) * 2018-12-26 2020-07-03 中芯集成电路（宁波）有限公司上海分公司 控制电路与体声波滤波器的集成方法和集成结构
CN111384912B (zh) * 2018-12-29 2023-09-29 中芯集成电路（宁波）有限公司上海分公司 晶体谐振器与控制电路的集成结构及其集成方法
CN111384919A (zh) * 2018-12-29 2020-07-07 中芯集成电路（宁波）有限公司上海分公司 晶体谐振器与控制电路的集成结构及其集成方法
CN111384915A (zh) * 2018-12-29 2020-07-07 中芯集成电路（宁波）有限公司上海分公司 晶体谐振器与控制电路的集成结构及其集成方法
US10843920B2 (en) 2019-03-08 2020-11-24 Analog Devices International Unlimited Company Suspended microelectromechanical system (MEMS) devices
WO2021147646A1 (zh) * 2020-01-22 2021-07-29 中芯集成电路（宁波）有限公司 一种薄膜压电声波滤波器及其制造方法
CN113472308B (zh) * 2021-04-29 2022-11-22 广州乐仪投资有限公司 谐振器及其形成方法、电子设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5853601A (en) * 1997-04-03 1998-12-29 Northrop Grumman Corporation Top-via etch technique for forming dielectric membranes
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
US20040021403A1 (en) * 2002-08-01 2004-02-05 Georgia Tech Research Corporation Piezoelectric on semiconductor-on-insulator microelectromechanical resonators and methods of fabrication
US20070044296A1 (en) * 2005-08-24 2007-03-01 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing film bulk acoustic wave resonator
US20070278469A1 (en) * 2006-05-31 2007-12-06 Stmicroelectronics S.A. Component containing a baw filter
US20070279152A1 (en) * 2006-06-05 2007-12-06 Kabushiki Kaisha Toshiba Thin film piezoelectric resonator and method of manufacturing same
US20110204991A1 (en) * 2010-02-24 2011-08-25 Rf Micro Devices, Inc. Filtering circuit topology

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3614678A (en) 1967-08-11 1971-10-19 Gen Electric Electromechanical filters with integral piezoresistive output and methods of making same
US5427975A (en) 1993-05-10 1995-06-27 Delco Electronics Corporation Method of micromachining an integrated sensor on the surface of a silicon wafer
US5511427A (en) 1993-07-21 1996-04-30 Honeywell Inc. Cantilevered microbeam temperature sensor
US5834646A (en) 1995-04-12 1998-11-10 Sensonor Asa Force sensor device
CA2176052A1 (en) 1995-06-07 1996-12-08 James D. Seefeldt Transducer having a resonating silicon beam and method for forming same
DE19648759A1 (de) 1996-11-25 1998-05-28 Max Planck Gesellschaft Verfahren zur Herstellung von Mikrostrukturen sowie Mikrostruktur
JP3348686B2 (ja) 1998-05-22 2002-11-20 住友金属工業株式会社 振動波検出方法及び装置
US6452238B1 (en) 1999-10-04 2002-09-17 Texas Instruments Incorporated MEMS wafer level package
KR100348177B1 (ko) * 2000-01-13 2002-08-09 조동일 단결정 실리콘의 마이크로머시닝 기법에서의 깊은 트렌치절연막을 이용한 절연 방법
AU7289801A (en) * 2000-04-11 2001-10-23 Sandia Corp Microelectromechanical apparatus for elevating and tilting a platform
KR100473871B1 (ko) * 2000-11-13 2005-03-08 주식회사 엠에스솔루션 박막 필터
US20020096421A1 (en) * 2000-11-29 2002-07-25 Cohn Michael B. MEMS device with integral packaging
US6660564B2 (en) 2002-01-25 2003-12-09 Sony Corporation Wafer-level through-wafer packaging process for MEMS and MEMS package produced thereby
US6635509B1 (en) 2002-04-12 2003-10-21 Dalsa Semiconductor Inc. Wafer-level MEMS packaging
US7763947B2 (en) 2002-04-23 2010-07-27 Sharp Laboratories Of America, Inc. Piezo-diode cantilever MEMS
US6710461B2 (en) 2002-06-06 2004-03-23 Lightuning Tech. Inc. Wafer level packaging of micro electromechanical device
US7138293B2 (en) 2002-10-04 2006-11-21 Dalsa Semiconductor Inc. Wafer level packaging technique for microdevices
US7552645B2 (en) 2003-05-07 2009-06-30 California Institute Of Technology Detection of resonator motion using piezoresistive signal downmixing
TWI275168B (en) 2003-06-06 2007-03-01 Sanyo Electric Co Semiconductor device and method for making the same
JP4744849B2 (ja) * 2004-11-11 2011-08-10 株式会社東芝 半導体装置
WO2006061781A1 (en) 2004-12-06 2006-06-15 Koninklijke Philips Electronics, N.V. Multisensor assembly
JP2006217281A (ja) * 2005-02-03 2006-08-17 Toshiba Corp 薄膜バルク音響装置の製造方法
JP4724488B2 (ja) * 2005-02-25 2011-07-13 日立オートモティブシステムズ株式会社 集積化マイクロエレクトロメカニカルシステム
US7262622B2 (en) 2005-03-24 2007-08-28 Memsic, Inc. Wafer-level package for integrated circuits
US7250353B2 (en) 2005-03-29 2007-07-31 Invensense, Inc. Method and system of releasing a MEMS structure
EP1732121A1 (en) 2005-06-06 2006-12-13 STMicroelectronics S.r.l. Process for manufacturing a high-quality SOI wafer
US7824098B2 (en) 2006-06-02 2010-11-02 The Board Of Trustees Of The Leland Stanford Junior University Composite mechanical transducers and approaches therefor
JP4802900B2 (ja) * 2006-07-13 2011-10-26 宇部興産株式会社 薄膜圧電共振器およびその製造方法
US7851876B2 (en) 2006-10-20 2010-12-14 Hewlett-Packard Development Company, L.P. Micro electro mechanical system
US8097474B2 (en) * 2008-03-24 2012-01-17 International Business Machines Corporation Integrated circuit chip design flow methodology including insertion of on-chip or scribe line wireless process monitoring and feedback circuitry
JP2009290368A (ja) * 2008-05-27 2009-12-10 Panasonic Electric Works Co Ltd Ｂａｗ共振装置の製造方法
US7615845B1 (en) 2008-06-25 2009-11-10 Infineon Technologies Sensonor As Active shielding of conductors in MEMS devices
US20100075481A1 (en) * 2008-07-08 2010-03-25 Xiao (Charles) Yang Method and structure of monolithically integrated ic-mems oscillator using ic foundry-compatible processes
US7851925B2 (en) 2008-09-19 2010-12-14 Infineon Technologies Ag Wafer level packaged MEMS integrated circuit
US8106724B1 (en) * 2009-07-23 2012-01-31 Integrated Device Technologies, Inc. Thin-film bulk acoustic resonators having perforated resonator body supports that enhance quality factor
JP2011038780A (ja) * 2009-08-06 2011-02-24 Rohm Co Ltd 半導体装置及び半導体装置の製造方法
US8921144B2 (en) * 2010-06-25 2014-12-30 International Business Machines Corporation Planar cavity MEMS and related structures, methods of manufacture and design structures
US8629036B2 (en) * 2011-11-11 2014-01-14 International Business Machines Corporation Integrated semiconductor devices with amorphous silicon beam, methods of manufacture and design structure
US8546240B2 (en) * 2011-11-11 2013-10-01 International Business Machines Corporation Methods of manufacturing integrated semiconductor devices with single crystalline beam

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5853601A (en) * 1997-04-03 1998-12-29 Northrop Grumman Corporation Top-via etch technique for forming dielectric membranes
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
US20040021403A1 (en) * 2002-08-01 2004-02-05 Georgia Tech Research Corporation Piezoelectric on semiconductor-on-insulator microelectromechanical resonators and methods of fabrication
US20070044296A1 (en) * 2005-08-24 2007-03-01 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing film bulk acoustic wave resonator
US20070278469A1 (en) * 2006-05-31 2007-12-06 Stmicroelectronics S.A. Component containing a baw filter
US20070279152A1 (en) * 2006-06-05 2007-12-06 Kabushiki Kaisha Toshiba Thin film piezoelectric resonator and method of manufacturing same
US20110204991A1 (en) * 2010-02-24 2011-08-25 Rf Micro Devices, Inc. Filtering circuit topology

Also Published As

Publication number Publication date
GB201408505D0 (en) 2014-06-25
JP2015502073A (ja) 2015-01-19
CN103947111A (zh) 2014-07-23
US20150344293A1 (en) 2015-12-03
DE112012004719T5 (de) 2014-08-07
CN103947111B (zh) 2016-08-17
JP5957788B2 (ja) 2016-07-27
US9105751B2 (en) 2015-08-11
US9758365B2 (en) 2017-09-12
US20130122627A1 (en) 2013-05-16
WO2013070294A1 (en) 2013-05-16

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