GB2406720B - An inductor formed in an integrated circuit - Google Patents

An inductor formed in an integrated circuit

Info

Publication number
GB2406720B
GB2406720B GB0421662A GB0421662A GB2406720B GB 2406720 B GB2406720 B GB 2406720B GB 0421662 A GB0421662 A GB 0421662A GB 0421662 A GB0421662 A GB 0421662A GB 2406720 B GB2406720 B GB 2406720B
Authority
GB
United Kingdom
Prior art keywords
conductive
inductor
aluminum
line
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0421662A
Other languages
English (en)
Other versions
GB0421662D0 (en
GB2406720A (en
Inventor
Edward Belden Harris
Sailesh Manish Merchant
Kurt George Steiner
Susan Clay Vitkavage
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems LLC filed Critical Agere Systems LLC
Publication of GB0421662D0 publication Critical patent/GB0421662D0/en
Publication of GB2406720A publication Critical patent/GB2406720A/en
Application granted granted Critical
Publication of GB2406720B publication Critical patent/GB2406720B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H01L23/5227—
    • H01L27/08—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB0421662A 2003-09-30 2004-09-29 An inductor formed in an integrated circuit Expired - Fee Related GB2406720B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50733503P 2003-09-30 2003-09-30

Publications (3)

Publication Number Publication Date
GB0421662D0 GB0421662D0 (en) 2004-10-27
GB2406720A GB2406720A (en) 2005-04-06
GB2406720B true GB2406720B (en) 2006-09-13

Family

ID=33418512

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0421662A Expired - Fee Related GB2406720B (en) 2003-09-30 2004-09-29 An inductor formed in an integrated circuit

Country Status (5)

Country Link
US (3) US7068139B2 (https=)
JP (1) JP4948756B2 (https=)
KR (1) KR101045195B1 (https=)
GB (1) GB2406720B (https=)
TW (1) TWI362098B (https=)

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US8669637B2 (en) * 2005-10-29 2014-03-11 Stats Chippac Ltd. Integrated passive device system
US7851257B2 (en) * 2005-10-29 2010-12-14 Stats Chippac Ltd. Integrated circuit stacking system with integrated passive components
US8791006B2 (en) 2005-10-29 2014-07-29 Stats Chippac, Ltd. Semiconductor device and method of forming an inductor on polymer matrix composite substrate
US8158510B2 (en) 2009-11-19 2012-04-17 Stats Chippac, Ltd. Semiconductor device and method of forming IPD on molded substrate
US8409970B2 (en) 2005-10-29 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of making integrated passive devices
US8188590B2 (en) 2006-03-30 2012-05-29 Stats Chippac Ltd. Integrated circuit package system with post-passivation interconnection and integration
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US8395233B2 (en) * 2009-06-24 2013-03-12 Harris Corporation Inductor structures for integrated circuit devices
TWI389260B (zh) * 2009-09-30 2013-03-11 Inotera Memories Inc 半導體記憶體之電容下電極的製備方法
US8179221B2 (en) * 2010-05-20 2012-05-15 Harris Corporation High Q vertical ribbon inductor on semiconducting substrate
US8860390B2 (en) 2010-06-04 2014-10-14 Apple Inc. Switching power supply opposite polarity inductor arrangement
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
US8304855B2 (en) 2010-08-04 2012-11-06 Harris Corporation Vertical capacitors formed on semiconducting substrates
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
US8310328B2 (en) * 2010-10-07 2012-11-13 Touch Micro-System Technology Corp. Planar coil and method of making the same
KR101059490B1 (ko) * 2010-11-15 2011-08-25 테세라 리써치 엘엘씨 임베드된 트레이스에 의해 구성된 전도성 패드
US8637968B2 (en) 2010-12-02 2014-01-28 Tessera, Inc. Stacked microelectronic assembly having interposer connecting active chips
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8610264B2 (en) 2010-12-08 2013-12-17 Tessera, Inc. Compliant interconnects in wafers
KR101218985B1 (ko) * 2011-05-31 2013-01-04 삼성전기주식회사 칩형 코일 부품
US9159711B2 (en) * 2011-07-29 2015-10-13 GlobalFoundries, Inc. Integrated circuit systems including vertical inductors
US20130146345A1 (en) * 2011-12-12 2013-06-13 Kazuki KAJIHARA Printed wiring board and method for manufacturing the same
US9001031B2 (en) 2012-07-30 2015-04-07 Qualcomm Mems Technologies, Inc. Complex passive design with special via implementation
US8859419B2 (en) 2013-02-01 2014-10-14 Globalfoundries Inc. Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device
US9263405B2 (en) * 2013-12-05 2016-02-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
US10032850B2 (en) * 2016-05-11 2018-07-24 Texas Instruments Incorporated Semiconductor die with back-side integrated inductive component
US10263064B2 (en) * 2017-06-30 2019-04-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of forming the same
US11495555B2 (en) * 2018-03-14 2022-11-08 Intel Corporation Magnetic bilayer structure for a cored or coreless semiconductor package
US11270959B2 (en) * 2018-03-23 2022-03-08 Intel Corporation Enabling magnetic films in inductors integrated into semiconductor packages
US11355459B2 (en) * 2018-05-17 2022-06-07 Intel Corpoation Embedding magnetic material, in a cored or coreless semiconductor package
US10748810B2 (en) 2018-05-29 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing an integrated inductor with protections caps on conductive lines
US10756161B2 (en) * 2018-06-27 2020-08-25 Intel Corporation Package-embedded thin-film capacitors, package-integral magnetic inductors, and methods of assembling same
US11049820B2 (en) * 2018-07-30 2021-06-29 Texas Instruments Incorporated Crack suppression structure for HV isolation component
CN113364337A (zh) * 2021-06-24 2021-09-07 洛阳理工学院 一种柔性单电极摩擦纳米发电机
CN114360842B (zh) * 2021-12-28 2022-11-22 中国人民解放军海军工程大学 一种应用于高功率微波源的轻型化周期性磁场线圈

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US6083802A (en) * 1998-12-31 2000-07-04 Winbond Electronics Corporation Method for forming an inductor
US6329234B1 (en) * 2000-07-24 2001-12-11 Taiwan Semiconductor Manufactuirng Company Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow
US6472285B1 (en) * 1999-04-30 2002-10-29 Winbond Electronics Corporation Method for fabricating high-Q inductance device in monolithic technology
US6573148B1 (en) * 2000-07-12 2003-06-03 Koninklljke Philips Electronics N.V. Methods for making semiconductor inductor
US20030157805A1 (en) * 2002-02-15 2003-08-21 Schultz Richard T. Thick traces from multiple damascene layers

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US6083802A (en) * 1998-12-31 2000-07-04 Winbond Electronics Corporation Method for forming an inductor
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US20030157805A1 (en) * 2002-02-15 2003-08-21 Schultz Richard T. Thick traces from multiple damascene layers

Also Published As

Publication number Publication date
US7541238B2 (en) 2009-06-02
JP2005175434A (ja) 2005-06-30
TWI362098B (en) 2012-04-11
KR20050032009A (ko) 2005-04-06
US7068139B2 (en) 2006-06-27
US20060192647A1 (en) 2006-08-31
US20090100668A1 (en) 2009-04-23
TW200520195A (en) 2005-06-16
GB0421662D0 (en) 2004-10-27
US7678639B2 (en) 2010-03-16
JP4948756B2 (ja) 2012-06-06
GB2406720A (en) 2005-04-06
KR101045195B1 (ko) 2011-06-30
US20050099259A1 (en) 2005-05-12

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160929