GB2388709A - Circuit fabrication method - Google Patents

Circuit fabrication method Download PDF

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Publication number
GB2388709A
GB2388709A GB0211424A GB0211424A GB2388709A GB 2388709 A GB2388709 A GB 2388709A GB 0211424 A GB0211424 A GB 0211424A GB 0211424 A GB0211424 A GB 0211424A GB 2388709 A GB2388709 A GB 2388709A
Authority
GB
United Kingdom
Prior art keywords
conductive
layer
insulator
semiconductor
strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0211424A
Other languages
English (en)
Other versions
GB0211424D0 (en
Inventor
Takeo Kawase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to GB0211424A priority Critical patent/GB2388709A/en
Publication of GB0211424D0 publication Critical patent/GB0211424D0/en
Priority to AU2003227947A priority patent/AU2003227947A1/en
Priority to TW092113498A priority patent/TWI253178B/zh
Priority to PCT/GB2003/002131 priority patent/WO2003098696A1/en
Priority to CN03800694.4A priority patent/CN100472793C/zh
Priority to US10/482,101 priority patent/US7198885B2/en
Priority to JP2004506090A priority patent/JP4165507B2/ja
Priority to EP03725412A priority patent/EP1456887A1/en
Priority to KR1020047000479A priority patent/KR100606182B1/ko
Publication of GB2388709A publication Critical patent/GB2388709A/en
Priority to JP2008108667A priority patent/JP2008235919A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
GB0211424A 2002-05-17 2002-05-17 Circuit fabrication method Withdrawn GB2388709A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GB0211424A GB2388709A (en) 2002-05-17 2002-05-17 Circuit fabrication method
KR1020047000479A KR100606182B1 (ko) 2002-05-17 2003-05-19 회로 제조 방법
CN03800694.4A CN100472793C (zh) 2002-05-17 2003-05-19 电路制作方法
TW092113498A TWI253178B (en) 2002-05-17 2003-05-19 Circuit fabrication method
PCT/GB2003/002131 WO2003098696A1 (en) 2002-05-17 2003-05-19 Circuit fabrication method
AU2003227947A AU2003227947A1 (en) 2002-05-17 2003-05-19 Circuit fabrication method
US10/482,101 US7198885B2 (en) 2002-05-17 2003-05-19 Circuit fabrication method
JP2004506090A JP4165507B2 (ja) 2002-05-17 2003-05-19 回路の製造方法
EP03725412A EP1456887A1 (en) 2002-05-17 2003-05-19 Circuit fabrication method
JP2008108667A JP2008235919A (ja) 2002-05-17 2008-04-18 回路、電気光学装置、および回路の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0211424A GB2388709A (en) 2002-05-17 2002-05-17 Circuit fabrication method

Publications (2)

Publication Number Publication Date
GB0211424D0 GB0211424D0 (en) 2002-06-26
GB2388709A true GB2388709A (en) 2003-11-19

Family

ID=9936937

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0211424A Withdrawn GB2388709A (en) 2002-05-17 2002-05-17 Circuit fabrication method

Country Status (9)

Country Link
US (1) US7198885B2 (https=)
EP (1) EP1456887A1 (https=)
JP (2) JP4165507B2 (https=)
KR (1) KR100606182B1 (https=)
CN (1) CN100472793C (https=)
AU (1) AU2003227947A1 (https=)
GB (1) GB2388709A (https=)
TW (1) TWI253178B (https=)
WO (1) WO2003098696A1 (https=)

Cited By (6)

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WO2008041027A1 (en) * 2006-10-03 2008-04-10 Plastic Logic Limited Distortion-tolerant processing
US7361594B2 (en) 2003-11-19 2008-04-22 Seiko Epson Corporation Method of manufacturing a thin film transistor, thin film transistor, thin film transistor circuit, electronic device, and electronic apparatus
WO2009083438A1 (fr) * 2007-12-21 2009-07-09 The Swatch Group Research And Development Ltd Dispositif d ' affichage a matrice active ayant un transistor organique a couches minces
WO2011124792A1 (fr) * 2010-04-08 2011-10-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication de deux zones adjacentes en matériaux différents
JP2012169502A (ja) * 2011-02-15 2012-09-06 Fuji Xerox Co Ltd 電子素子及びその製造方法
US10585456B2 (en) 2015-08-26 2020-03-10 Lg Display Co., Ltd. Flexible display device having bending sensing device

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JP4615197B2 (ja) * 2002-08-30 2011-01-19 シャープ株式会社 Ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法
TWI237892B (en) * 2004-01-13 2005-08-11 Ind Tech Res Inst Method of forming thin-film transistor devices with electro-static discharge protection
GB0400997D0 (en) 2004-01-16 2004-02-18 Univ Cambridge Tech N-channel transistor
JP4266842B2 (ja) * 2004-02-02 2009-05-20 セイコーエプソン株式会社 電気光学装置用基板の製造方法及び電気光学装置の製造方法
JP4729855B2 (ja) * 2004-03-15 2011-07-20 セイコーエプソン株式会社 薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
JP4800594B2 (ja) * 2004-06-09 2011-10-26 三菱電機株式会社 高周波デバイス
US7868903B2 (en) 2004-10-14 2011-01-11 Daktronics, Inc. Flexible pixel element fabrication and sealing method
US8001455B2 (en) * 2004-10-14 2011-08-16 Daktronics, Inc. Translation table
US8344410B2 (en) 2004-10-14 2013-01-01 Daktronics, Inc. Flexible pixel element and signal distribution means
US7893948B1 (en) * 2004-10-14 2011-02-22 Daktronics, Inc. Flexible pixel hardware and method
KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
GB0426563D0 (en) 2004-12-03 2005-01-05 Plastic Logic Ltd Alignment tolerant patterning on flexible substrates
US20060127817A1 (en) * 2004-12-10 2006-06-15 Eastman Kodak Company In-line fabrication of curved surface transistors
US7125495B2 (en) * 2004-12-20 2006-10-24 Palo Alto Research Center, Inc. Large area electronic device with high and low resolution patterned film features
JP2006201217A (ja) 2005-01-18 2006-08-03 Seiko Epson Corp 配線基板、電気光学装置及び電子機器
US7341680B2 (en) 2005-03-02 2008-03-11 Hewlett-Packard Development Company, L.P. Printable composition with nanostructures of first and second types
KR101219035B1 (ko) 2005-05-03 2013-01-07 삼성디스플레이 주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
KR101133767B1 (ko) * 2005-03-09 2012-04-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
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JP4686232B2 (ja) * 2005-03-30 2011-05-25 セイコーエプソン株式会社 半導体装置及び半導体装置の製造方法
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CN103793089B (zh) * 2012-10-30 2017-05-17 宸鸿科技(厦门)有限公司 触控面板
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CN104505365B (zh) * 2014-12-25 2017-06-30 中国电子科技集团公司第二十九研究所 一种制作含侧面图形的陶瓷薄膜电路的方法及高精度夹持装置
CN107204375B (zh) * 2017-05-19 2019-11-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法
TWI736695B (zh) 2017-10-24 2021-08-21 啟耀光電股份有限公司 電子裝置與其製造方法
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TWI893770B (zh) * 2024-04-18 2025-08-11 友達光電股份有限公司 顯示裝置

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CN100472793C (zh) 2009-03-25
US20040235227A1 (en) 2004-11-25
KR100606182B1 (ko) 2006-08-01
AU2003227947A1 (en) 2003-12-02
CN1533607A (zh) 2004-09-29
TWI253178B (en) 2006-04-11
GB0211424D0 (en) 2002-06-26
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JP2005531134A (ja) 2005-10-13
EP1456887A1 (en) 2004-09-15

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