GB2289984B - Method for the fabrication of a semiconductor device - Google Patents

Method for the fabrication of a semiconductor device

Info

Publication number
GB2289984B
GB2289984B GB9509207A GB9509207A GB2289984B GB 2289984 B GB2289984 B GB 2289984B GB 9509207 A GB9509207 A GB 9509207A GB 9509207 A GB9509207 A GB 9509207A GB 2289984 B GB2289984 B GB 2289984B
Authority
GB
United Kingdom
Prior art keywords
fabrication
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9509207A
Other languages
English (en)
Other versions
GB2289984A (en
GB9509207D0 (en
GB2289984A8 (en
Inventor
Jae Kap Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9509207D0 publication Critical patent/GB9509207D0/en
Publication of GB2289984A publication Critical patent/GB2289984A/en
Publication of GB2289984A8 publication Critical patent/GB2289984A8/en
Application granted granted Critical
Publication of GB2289984B publication Critical patent/GB2289984B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
GB9509207A 1994-05-07 1995-05-05 Method for the fabrication of a semiconductor device Expired - Fee Related GB2289984B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940009963A KR0126640B1 (ko) 1994-05-07 1994-05-07 반도체소자 및 그 제조방법

Publications (4)

Publication Number Publication Date
GB9509207D0 GB9509207D0 (en) 1995-06-28
GB2289984A GB2289984A (en) 1995-12-06
GB2289984A8 GB2289984A8 (en) 1997-07-14
GB2289984B true GB2289984B (en) 1998-03-11

Family

ID=19382624

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9509207A Expired - Fee Related GB2289984B (en) 1994-05-07 1995-05-05 Method for the fabrication of a semiconductor device

Country Status (3)

Country Link
KR (1) KR0126640B1 (zh)
CN (1) CN1049300C (zh)
GB (1) GB2289984B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100213209B1 (ko) * 1996-07-29 1999-08-02 윤종용 반도체장치의 제조방법
GB2324408A (en) * 1997-01-21 1998-10-21 United Microelectronics Corporation Forming DRAM cells
CN1059983C (zh) * 1997-07-04 2000-12-27 联华电子股份有限公司 形成动态随机存取存储器的方法
JP2000012687A (ja) * 1998-06-23 2000-01-14 Mitsubishi Electric Corp 半導体装置及びその製造方法
GB2341427A (en) * 1998-09-08 2000-03-15 Gerard Francis Robinson Sealing member
JP3241020B2 (ja) * 1999-03-26 2001-12-25 日本電気株式会社 半導体装置の製造方法
US7266798B2 (en) * 2005-10-12 2007-09-04 International Business Machines Corporation Designer's intent tolerance bands for proximity correction and checking
KR100751663B1 (ko) * 2006-09-06 2007-08-23 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US9254998B2 (en) * 2013-03-11 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS device with a capping substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449422A2 (en) * 1990-02-26 1991-10-02 Nec Corporation Semiconductor memory device
EP0600850A1 (de) * 1990-02-23 1994-06-08 INSTITUT FÜR HALBLEITERPHYSIK FRANKFURT (ODER) GmbH DRAM-Zellenstruktur mit Kondensator über Bitleitung und Verfahren zu deren Herstellung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128549A (en) * 1990-03-30 1992-07-07 Beckman Instruments, Inc. Stray radiation compensation
JP3123073B2 (ja) * 1990-11-08 2001-01-09 日本電気株式会社 半導体記憶装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0600850A1 (de) * 1990-02-23 1994-06-08 INSTITUT FÜR HALBLEITERPHYSIK FRANKFURT (ODER) GmbH DRAM-Zellenstruktur mit Kondensator über Bitleitung und Verfahren zu deren Herstellung
EP0449422A2 (en) * 1990-02-26 1991-10-02 Nec Corporation Semiconductor memory device

Also Published As

Publication number Publication date
CN1116771A (zh) 1996-02-14
GB2289984A (en) 1995-12-06
KR950034516A (ko) 1995-12-28
GB9509207D0 (en) 1995-06-28
GB2289984A8 (en) 1997-07-14
KR0126640B1 (ko) 1998-04-02
CN1049300C (zh) 2000-02-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130505