GB9509207D0 - Method for the fabrication of a semiconductor device - Google Patents
Method for the fabrication of a semiconductor deviceInfo
- Publication number
- GB9509207D0 GB9509207D0 GBGB9509207.8A GB9509207A GB9509207D0 GB 9509207 D0 GB9509207 D0 GB 9509207D0 GB 9509207 A GB9509207 A GB 9509207A GB 9509207 D0 GB9509207 D0 GB 9509207D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- fabrication
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940009963A KR0126640B1 (en) | 1994-05-07 | 1994-05-07 | Semiconductor device & manufacturing method |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| GB9509207D0 true GB9509207D0 (en) | 1995-06-28 |
| GB2289984A GB2289984A (en) | 1995-12-06 |
| GB2289984A8 GB2289984A8 (en) | 1997-07-14 |
| GB2289984B GB2289984B (en) | 1998-03-11 |
Family
ID=19382624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9509207A Expired - Fee Related GB2289984B (en) | 1994-05-07 | 1995-05-05 | Method for the fabrication of a semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR0126640B1 (en) |
| CN (1) | CN1049300C (en) |
| GB (1) | GB2289984B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100213209B1 (en) * | 1996-07-29 | 1999-08-02 | 윤종용 | Manufacturing method of semiconductor devices |
| GB2324408A (en) * | 1997-01-21 | 1998-10-21 | United Microelectronics Corporation | Forming DRAM cells |
| CN1059983C (en) * | 1997-07-04 | 2000-12-27 | 联华电子股份有限公司 | Method for forming dynamic random access storage |
| JP2000012687A (en) | 1998-06-23 | 2000-01-14 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| GB2341427A (en) * | 1998-09-08 | 2000-03-15 | Gerard Francis Robinson | Sealing member |
| JP3241020B2 (en) * | 1999-03-26 | 2001-12-25 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| US7266798B2 (en) * | 2005-10-12 | 2007-09-04 | International Business Machines Corporation | Designer's intent tolerance bands for proximity correction and checking |
| KR100751663B1 (en) * | 2006-09-06 | 2007-08-23 | 주식회사 하이닉스반도체 | Manufacturing method for semiconductor device |
| US9254998B2 (en) * | 2013-03-11 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS device with a capping substrate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD299990A5 (en) * | 1990-02-23 | 1992-05-14 | Dresden Forschzentr Mikroelek | One-transistor memory cell arrangement and method for its production |
| EP0449422B1 (en) * | 1990-02-26 | 1997-06-18 | Nec Corporation | Semiconductor memory device |
| US5128549A (en) * | 1990-03-30 | 1992-07-07 | Beckman Instruments, Inc. | Stray radiation compensation |
| JP3123073B2 (en) * | 1990-11-08 | 2001-01-09 | 日本電気株式会社 | Method for manufacturing semiconductor memory device |
-
1994
- 1994-05-07 KR KR1019940009963A patent/KR0126640B1/en not_active IP Right Cessation
-
1995
- 1995-05-05 GB GB9509207A patent/GB2289984B/en not_active Expired - Fee Related
- 1995-05-05 CN CN95104257A patent/CN1049300C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2289984A8 (en) | 1997-07-14 |
| CN1049300C (en) | 2000-02-09 |
| GB2289984B (en) | 1998-03-11 |
| CN1116771A (en) | 1996-02-14 |
| KR950034516A (en) | 1995-12-28 |
| KR0126640B1 (en) | 1998-04-02 |
| GB2289984A (en) | 1995-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR970004450B1 (en) | Method for manufacturing semiconductor device | |
| KR970008346B1 (en) | Method for forming a semiconductor device | |
| GB9326286D0 (en) | Semiconductor device manufacturing method | |
| GB2288276B (en) | Semiconductor device and method for manufacturing the same | |
| EP0588055A3 (en) | Method for manufacturing wafer | |
| EP0690486A3 (en) | Semiconductor device fabrication | |
| GB9713223D0 (en) | Method of fabricating a semiconductor device | |
| GB2296819B (en) | Method for fabricating semiconductor devices | |
| EP0717477A3 (en) | Semiconductor device and method for manufacturing the same | |
| EP0466195A3 (en) | A fabrication method for semiconductor devices | |
| EP0675530A3 (en) | Manufacturing method of a field effect semiconductor device. | |
| GB2290167B (en) | Method for fabricating a semiconductor device | |
| GB2291536B (en) | Method for manufacturing semiconductor device | |
| EP0442493A3 (en) | A semiconductor device and a method for fabricating the same | |
| GB2289984B (en) | Method for the fabrication of a semiconductor device | |
| GB9500996D0 (en) | Semiconductor device and method for fabrication thereof | |
| GB2289162B (en) | Method for fabricating a semiconductor device | |
| EP0709879A4 (en) | Method for manufacturing semiconductor | |
| GB9502863D0 (en) | Method for fabricating semiconductor device | |
| GB2320805B (en) | Method of fabricating a semiconductor device | |
| GB2280546B (en) | A semiconductor device and a method for manufacturing the same | |
| GB9426147D0 (en) | Method for fabricating semi-conductor device | |
| GB2310759B (en) | Method of manufacturing a semiconductor device | |
| GB2290906B (en) | Method for the fabrication of a semiconductor device | |
| GB2313477B (en) | Method of manufacturing a semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20130505 |