GB2272995B - Method for making or treating a semiconductor - Google Patents

Method for making or treating a semiconductor

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Publication number
GB2272995B
GB2272995B GB9322966A GB9322966A GB2272995B GB 2272995 B GB2272995 B GB 2272995B GB 9322966 A GB9322966 A GB 9322966A GB 9322966 A GB9322966 A GB 9322966A GB 2272995 B GB2272995 B GB 2272995B
Authority
GB
United Kingdom
Prior art keywords
substrate
corona discharge
semiconductor
making
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9322966A
Other languages
English (en)
Other versions
GB9322966D0 (en
GB2272995A (en
Inventor
Byung Chul Ahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Gold Star Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19342745&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=GB2272995(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by LG Electronics Inc, Gold Star Co Ltd filed Critical LG Electronics Inc
Priority to GB9611159A priority Critical patent/GB2299711B/en
Publication of GB9322966D0 publication Critical patent/GB9322966D0/en
Publication of GB2272995A publication Critical patent/GB2272995A/en
Application granted granted Critical
Publication of GB2272995B publication Critical patent/GB2272995B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • H10P30/20—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • Chemical & Material Sciences (AREA)
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GB9322966A 1992-11-09 1993-11-08 Method for making or treating a semiconductor Expired - Fee Related GB2272995B (en)

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Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472664A (en) * 1989-03-08 1995-12-05 Abtox, Inc. Plasma gas mixture for sterilizer and method
US5593649A (en) * 1989-03-08 1997-01-14 Abtox, Inc. Canister with plasma gas mixture for sterilizer
US5650693A (en) * 1989-03-08 1997-07-22 Abtox, Inc. Plasma sterilizer apparatus using a non-flammable mixture of hydrogen and oxygen
US5578130A (en) * 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
MX9303141A (es) * 1992-05-28 1994-04-29 Polar Materials Inc Metodos y aparatos para depositar recubrimientos de barrera.
FR2704558B1 (fr) * 1993-04-29 1995-06-23 Air Liquide Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement.
JPH09502646A (ja) * 1993-07-16 1997-03-18 フュージョン システムズ コーポレーション 残留物を除去するために励起させたハロゲンを含有するガスでのコーティングした基板の後処理
US5556474A (en) * 1993-12-14 1996-09-17 Nissin Electric Co., Ltd. Plasma processing apparatus
US5558843A (en) * 1994-09-01 1996-09-24 Eastman Kodak Company Near atmospheric pressure treatment of polymers using helium discharges
WO1996031997A1 (en) * 1995-04-07 1996-10-10 Seiko Epson Corporation Surface treatment apparatus
US5783641A (en) * 1995-04-19 1998-07-21 Korea Institute Of Science And Technology Process for modifying surfaces of polymers, and polymers having surfaces modified by such process
US5620573A (en) * 1995-04-28 1997-04-15 Lucent Technologies Inc. Reduced stress tungsten deposition
TW371796B (en) 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
KR970017960A (ko) * 1995-09-11 1997-04-30 윌리엄 이. 힐러 대 표면 영역 실리콘 기판
US5660639A (en) * 1995-10-17 1997-08-26 Ford Motor Company Method and apparatus for plasma treating an article
JP3789485B2 (ja) * 1996-02-23 2006-06-21 株式会社荏原製作所 化学蒸着方法および蒸着装置
US5821548A (en) * 1996-12-20 1998-10-13 Technical Visions, Inc. Beam source for production of radicals and metastables
JPH11288893A (ja) 1998-04-03 1999-10-19 Nec Corp 半導体製造装置及び半導体装置の製造方法
US6602806B1 (en) 1999-08-17 2003-08-05 Applied Materials, Inc. Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
EP1077480B1 (en) * 1999-08-17 2008-11-12 Applied Materials, Inc. Method and apparatus to enhance properties of Si-O-C low K films
JP4495851B2 (ja) * 2000-11-15 2010-07-07 積水化学工業株式会社 半導体素子の製造装置
JP2002208563A (ja) * 2001-01-09 2002-07-26 Ebara Corp 被加工物の加工装置及び加工方法
US20030213561A1 (en) * 2001-03-12 2003-11-20 Selwyn Gary S. Atmospheric pressure plasma processing reactor
AU2002326783A1 (en) * 2001-08-27 2003-03-10 University Of New Hampshire Dielectric barrier discharge process for depositing silicon nitride film on substrates
JP2003100717A (ja) * 2001-09-21 2003-04-04 Tokyo Electron Ltd プラズマ処理装置
KR100512774B1 (ko) * 2001-10-06 2005-09-07 종근당바이오 주식회사 7-아미노세팔로스포란산의 제조를 위한 세팔로스포린ｃ배양액의 전처리방법
US6808741B1 (en) * 2001-10-26 2004-10-26 Seagate Technology Llc In-line, pass-by method for vapor lubrication
US20050045103A1 (en) * 2002-01-23 2005-03-03 Mikhael Michael G. Method and apparatus for applying material to glass
ATE402277T1 (de) 2002-02-05 2008-08-15 Dow Global Technologies Inc Chemische dampfphasenabscheidung auf einem substrat mittels eines korona-plasmas
WO2004015862A2 (en) * 2002-08-13 2004-02-19 Trikon Technologies Limited Acoustic resonators
US7157659B2 (en) 2002-08-26 2007-01-02 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
KR100464856B1 (ko) 2002-11-07 2005-01-05 삼성전자주식회사 표면 식각 방법 및 실리콘 기판 이면 식각 방법.
EP1568077B1 (de) 2002-12-04 2018-07-11 Suss MicroTec Lithography GmbH Verfahren zur vorbehandlung der oberflächen von zu bondenden substraten
JP4233348B2 (ja) * 2003-02-24 2009-03-04 シャープ株式会社 プラズマプロセス装置
JP2004362901A (ja) * 2003-06-04 2004-12-24 Sharp Corp イオンドーピング装置、イオンドーピング方法および半導体装置
US7483255B2 (en) * 2003-06-11 2009-01-27 Ion Systems Ionizing electrode structure and apparatus
US7339778B1 (en) * 2003-06-11 2008-03-04 Ion Systems Corona discharge static neutralizing apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
DE102005045331A1 (de) * 2005-06-16 2006-12-28 Süss MicroTec AG Entfernen von dünnen strukturierten Polymerschichten durch atmosphärisches Plasma
US20070138405A1 (en) * 2005-12-16 2007-06-21 3M Innovative Properties Company Corona etching
US7642150B2 (en) * 2006-11-08 2010-01-05 Varian Semiconductor Equipment Associates, Inc. Techniques for forming shallow junctions
US20090165716A1 (en) * 2008-01-01 2009-07-02 Dongguan Anwell Digital Machinery Ltd. Method and system for plasma enhanced chemical vapor deposition
KR20090088056A (ko) * 2008-02-14 2009-08-19 삼성전기주식회사 가스공급 유닛 및 화학기상증착 장치
US20100037824A1 (en) * 2008-08-13 2010-02-18 Synos Technology, Inc. Plasma Reactor Having Injector
US8770142B2 (en) * 2008-09-17 2014-07-08 Veeco Ald Inc. Electrode for generating plasma and plasma generator
US8851012B2 (en) * 2008-09-17 2014-10-07 Veeco Ald Inc. Vapor deposition reactor using plasma and method for forming thin film using the same
US8871628B2 (en) * 2009-01-21 2014-10-28 Veeco Ald Inc. Electrode structure, device comprising the same and method for forming electrode structure
KR101172147B1 (ko) 2009-02-23 2012-08-07 시너스 테크놀리지, 인코포레이티드 플라즈마에 의한 라디칼을 이용한 박막 형성 방법
DE102009020163B4 (de) * 2009-05-07 2012-07-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum zwischenschichtfreien Verbinden von Substraten, Vorrichtung zur Durchführung einer Plasmabehandlung sowie deren Verwendung
US8758512B2 (en) 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
US8771791B2 (en) 2010-10-18 2014-07-08 Veeco Ald Inc. Deposition of layer using depositing apparatus with reciprocating susceptor
KR20140138328A (ko) * 2010-11-05 2014-12-03 비코 에이엘디 인코포레이티드 다중 플라즈마 챔버를 구비한 라디칼 반응기
JP5263266B2 (ja) * 2010-11-09 2013-08-14 パナソニック株式会社 プラズマドーピング方法及び装置
CN103189543A (zh) * 2010-11-24 2013-07-03 思诺斯技术公司 用于在大衬底上执行原子层沉积的具有多个分段的延伸反应器组件
DE102010053214A1 (de) * 2010-12-03 2012-06-06 Evonik Degussa Gmbh Verfahren zur Wasserstoffpassivierung von Halbleiterschichten
US8877300B2 (en) 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
US8697198B2 (en) * 2011-03-31 2014-04-15 Veeco Ald Inc. Magnetic field assisted deposition
JP5977986B2 (ja) * 2011-11-08 2016-08-24 株式会社日立ハイテクノロジーズ 熱処理装置
US20140205769A1 (en) * 2013-01-22 2014-07-24 Veeco Ald Inc. Cascaded plasma reactor
JP6123796B2 (ja) * 2013-03-15 2017-05-10 東レ株式会社 プラズマｃｖｄ装置およびプラズマｃｖｄ方法
US10704144B2 (en) 2015-10-12 2020-07-07 Universal Display Corporation Apparatus and method for printing multilayer organic thin films from vapor phase in an ultra-pure gas ambient
KR20210094694A (ko) 2020-01-21 2021-07-30 삼성전자주식회사 기판 처리 장치, 물질막 증착 장치, 및 상압 화학 기상 증착 장치
US20250054771A1 (en) * 2021-12-20 2025-02-13 Hpsp Co., Ltd. Method for doping carbon in thin film on wafer
US20240404794A1 (en) * 2023-06-02 2024-12-05 Tokyo Electron Limited Plasma processing method and apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551353A (en) * 1981-12-30 1985-11-05 Unitrode Corporation Method for reducing leakage currents in semiconductor devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4664951A (en) * 1985-07-31 1987-05-12 Energy Conversion Devices, Inc. Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration
DE3738344A1 (de) * 1986-11-14 1988-05-26 Mitsubishi Electric Corp Anlage zum einfuehren von gitterstoerstellen und verfahren dazu
JPH03107108A (ja) * 1989-09-20 1991-05-07 Japan Aviation Electron Ind Ltd 広帯域光ファイバカプラ及びその製造方法
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5082517A (en) * 1990-08-23 1992-01-21 Texas Instruments Incorporated Plasma density controller for semiconductor device processing equipment
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551353A (en) * 1981-12-30 1985-11-05 Unitrode Corporation Method for reducing leakage currents in semiconductor devices

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Abstract of JP02-281730 and JP02-281734 (SUMITOMO) *
Abstract of JP02-281734 and JP02-281734 (SUMITOMO) *
Abstract of JP03-236475 and JP03-236475 (KAGAKU) *
Abstract of JP59-121843 and JP59-121843 (TOKYO DAIGAKU) *

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JPH06208955A (ja) 1994-07-26
KR960000190B1 (ko) 1996-01-03
GB2272995A (en) 1994-06-01
TW239225B (enExample) 1995-01-21
US5560777A (en) 1996-10-01

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