ES2162861T3 - Procedimiento activado por energia de microondas para la preparacion de material semiconductor de alta calidad. - Google Patents

Procedimiento activado por energia de microondas para la preparacion de material semiconductor de alta calidad.

Info

Publication number
ES2162861T3
ES2162861T3 ES94909452T ES94909452T ES2162861T3 ES 2162861 T3 ES2162861 T3 ES 2162861T3 ES 94909452 T ES94909452 T ES 94909452T ES 94909452 T ES94909452 T ES 94909452T ES 2162861 T3 ES2162861 T3 ES 2162861T3
Authority
ES
Spain
Prior art keywords
semiconductor material
high quality
microwave energy
quality semiconductor
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES94909452T
Other languages
English (en)
Inventor
Subhendu Guha
Chi C Yang
Xixiang Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Solar Systems Corp
Original Assignee
United Solar Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Solar Systems Corp filed Critical United Solar Systems Corp
Application granted granted Critical
Publication of ES2162861T3 publication Critical patent/ES2162861T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

MATERIAL SEMICONDUCTOR DE ALTA CALIDAD SE DEPOSITA EN UN PROCESO DE ELECTRODEPOSICION DE DESCARGA LUMINESCENTE ENERGIZADO POR MICRONDAS, ENERGIZANDO UN GAS EN PROCESO CON ENERGIA POR MICRONDAS MEDIANTE UN GENERADOR DE MICRONDAS (24) A UN NIVEL DE POTENCIA SUFICIENTE PARA GENERAR UN PLASMA (30) A UN GRADO DE SATURACION DE APROXIMADAMENTE EL 100, E IMPIDIENDO EL ACCESO DE LAS ESPECIES DE ELECTRODEPOSICION A UN SUSTRATO (28) PARA REBAJAR EL INDICE DE ELECTRODEPOSICION A UN VALOR MENOR QUE EL QUE SE CONSEGUIRIA, DE OTRA FORMA, OPERANDO A UN GRADO DE SATURACION DEL 100.
ES94909452T 1993-01-28 1994-01-13 Procedimiento activado por energia de microondas para la preparacion de material semiconductor de alta calidad. Expired - Lifetime ES2162861T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/010,074 US5334423A (en) 1993-01-28 1993-01-28 Microwave energized process for the preparation of high quality semiconductor material

Publications (1)

Publication Number Publication Date
ES2162861T3 true ES2162861T3 (es) 2002-01-16

Family

ID=21743695

Family Applications (1)

Application Number Title Priority Date Filing Date
ES94909452T Expired - Lifetime ES2162861T3 (es) 1993-01-28 1994-01-13 Procedimiento activado por energia de microondas para la preparacion de material semiconductor de alta calidad.

Country Status (6)

Country Link
US (1) US5334423A (es)
EP (1) EP0680384B1 (es)
JP (1) JPH08506215A (es)
AU (1) AU6229494A (es)
ES (1) ES2162861T3 (es)
WO (1) WO1994016825A1 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274461B1 (en) * 1998-08-20 2001-08-14 United Solar Systems Corporation Method for depositing layers of high quality semiconductor material
DE19935046C2 (de) * 1999-07-26 2001-07-12 Schott Glas Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung
KR20030028296A (ko) * 2001-09-28 2003-04-08 학교법인 한양학원 플라즈마 화학기상증착 장치 및 이를 이용한 탄소나노튜브제조방법
DE10308381B4 (de) * 2003-02-27 2012-08-16 Forschungszentrum Jülich GmbH Verfahren zur Abscheidung von Silizium
FR2857379A1 (fr) * 2003-07-09 2005-01-14 Inanov Croissance catalytique et directionnelle de nanotubes de carbone individuels, applications a des sources froides d'electrons
DE10353996A1 (de) * 2003-11-19 2005-06-09 Degussa Ag Nanoskaliges, kristallines Siliciumpulver
EP1760045A1 (en) 2005-09-03 2007-03-07 Degussa GmbH Nanoscale silicon particles

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
US4721663A (en) * 1985-08-26 1988-01-26 Energy Conversion Devices, Inc. Enhancement layer for negatively charged electrophotographic devices
DE3853551T2 (de) * 1987-05-08 1995-10-05 Hitachi Ltd Plasmabehandlungsvorrichtung.
US4883686A (en) * 1988-05-26 1989-11-28 Energy Conversion Devices, Inc. Method for the high rate plasma deposition of high quality material
US5192717A (en) * 1989-04-28 1993-03-09 Canon Kabushiki Kaisha Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method

Also Published As

Publication number Publication date
EP0680384A4 (en) 1997-12-29
US5334423A (en) 1994-08-02
AU6229494A (en) 1994-08-15
EP0680384B1 (en) 2001-09-12
EP0680384A1 (en) 1995-11-08
JPH08506215A (ja) 1996-07-02
WO1994016825A1 (en) 1994-08-04

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