GB2197126A - A light emitting semi- conductor device having current overload protection - Google Patents

A light emitting semi- conductor device having current overload protection Download PDF

Info

Publication number
GB2197126A
GB2197126A GB08725476A GB8725476A GB2197126A GB 2197126 A GB2197126 A GB 2197126A GB 08725476 A GB08725476 A GB 08725476A GB 8725476 A GB8725476 A GB 8725476A GB 2197126 A GB2197126 A GB 2197126A
Authority
GB
United Kingdom
Prior art keywords
light emitting
region
semi
resistor
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB08725476A
Other languages
English (en)
Other versions
GB8725476D0 (en
Inventor
Bun-Joong Kim
Ki-Joon Kim
Choon-Woo Nahm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor and Telecomunications Co Ltd
Original Assignee
Samsung Semiconductor and Telecomunications Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor and Telecomunications Co Ltd filed Critical Samsung Semiconductor and Telecomunications Co Ltd
Publication of GB8725476D0 publication Critical patent/GB8725476D0/en
Publication of GB2197126A publication Critical patent/GB2197126A/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
GB08725476A 1986-11-04 1987-10-30 A light emitting semi- conductor device having current overload protection Withdrawn GB2197126A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860009285A KR890002811B1 (ko) 1986-11-04 1986-11-04 히트 싱크를 겸한 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지

Publications (2)

Publication Number Publication Date
GB8725476D0 GB8725476D0 (en) 1987-12-02
GB2197126A true GB2197126A (en) 1988-05-11

Family

ID=19253177

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08725476A Withdrawn GB2197126A (en) 1986-11-04 1987-10-30 A light emitting semi- conductor device having current overload protection

Country Status (5)

Country Link
JP (1) JPS63122293A (fr)
KR (1) KR890002811B1 (fr)
DE (1) DE3735818A1 (fr)
FR (1) FR2606211B1 (fr)
GB (1) GB2197126A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4242604A1 (en) * 1991-12-18 1993-06-24 Gold Star Co Light-emitting diode with different light output levels for vehicle rear braking light - uses integrated resistance with different resistance terminals providing respective resistance values for controlling light level
GB2299205A (en) * 1995-03-23 1996-09-25 Mitsubishi Electric Corp Semiconductor laser device including heat sink with PN junction
WO1997037390A1 (fr) * 1996-03-28 1997-10-09 Siemens Aktiengesellschaft Circuit integre a semi-conducteur
DE102006015335A1 (de) * 2006-04-03 2007-10-11 Ivoclar Vivadent Ag Halbleiter-Strahlungsquelle sowie Lichthärtgerät
GB2479120A (en) * 2010-03-26 2011-10-05 Cambridge Display Tech Ltd Organic electrolumunescent device having conductive layer connecting metal over well defining layer and cathode
FR3001357A1 (fr) * 2013-01-22 2014-07-25 Sylumis Support de fixation mecanique et de raccordement electrique de diodes electroluminescentes

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4019091A1 (de) * 1990-06-15 1991-12-19 Battelle Institut E V Waermeableitungseinrichtung fuer halbleiterbauelemente und verfahren zu deren herstellung
DE4205789A1 (de) * 1992-02-26 1993-09-02 Abb Patent Gmbh Lichtquelle mit mindestens einem lichtemittierenden bauelement und einer vorgeschalteten schutzeinrichtung
KR20030049211A (ko) * 2001-12-14 2003-06-25 서오텔레콤(주) 발광다이오드소자

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1483849A (en) * 1974-09-21 1977-08-24 Nippon Electric Co Semiconductor laser device equipped with a silicon heat sink
GB2180985A (en) * 1985-09-28 1987-04-08 Int Standard Electric Corp Laser device with stabilised power output

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element
NL178376C (nl) * 1978-06-19 1986-03-03 Philips Nv Koppelelement met een lichtbron en een lens.
FR2445617A1 (fr) * 1978-12-28 1980-07-25 Ibm France Resistance a tension de claquage amelioree obtenue par une double implantation ionique dans un substrat semi-conducteur et son procede de fabrication
GB2098714B (en) * 1980-06-04 1984-08-22 Tranilamp Ltd Led cluster assembly
JPS6081879A (ja) * 1983-10-11 1985-05-09 Nec Corp 発光ダイオ−ド
JPS60186076A (ja) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> 半導体発光装置
JPS61107783A (ja) * 1984-10-30 1986-05-26 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1483849A (en) * 1974-09-21 1977-08-24 Nippon Electric Co Semiconductor laser device equipped with a silicon heat sink
GB2180985A (en) * 1985-09-28 1987-04-08 Int Standard Electric Corp Laser device with stabilised power output

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4242604A1 (en) * 1991-12-18 1993-06-24 Gold Star Co Light-emitting diode with different light output levels for vehicle rear braking light - uses integrated resistance with different resistance terminals providing respective resistance values for controlling light level
GB2299205A (en) * 1995-03-23 1996-09-25 Mitsubishi Electric Corp Semiconductor laser device including heat sink with PN junction
US5636234A (en) * 1995-03-23 1997-06-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device including heat sink with pn junction
WO1997037390A1 (fr) * 1996-03-28 1997-10-09 Siemens Aktiengesellschaft Circuit integre a semi-conducteur
US5990499A (en) * 1996-03-28 1999-11-23 Siemens Aktiengesellschaft Integrated semiconductor circuit
DE102006015335A1 (de) * 2006-04-03 2007-10-11 Ivoclar Vivadent Ag Halbleiter-Strahlungsquelle sowie Lichthärtgerät
US7595513B2 (en) 2006-04-03 2009-09-29 Ivoctar Vivadent Ag Semiconductor radiation source and light curing device
DE102006015335B4 (de) * 2006-04-03 2013-05-02 Ivoclar Vivadent Ag Halbleiter-Strahlungsquelle sowie Lichthärtgerät
GB2479120A (en) * 2010-03-26 2011-10-05 Cambridge Display Tech Ltd Organic electrolumunescent device having conductive layer connecting metal over well defining layer and cathode
US8686632B2 (en) 2010-03-26 2014-04-01 Cambridge Display Technology Limited Organic electroluminescent device
FR3001357A1 (fr) * 2013-01-22 2014-07-25 Sylumis Support de fixation mecanique et de raccordement electrique de diodes electroluminescentes

Also Published As

Publication number Publication date
JPS63122293A (ja) 1988-05-26
GB8725476D0 (en) 1987-12-02
KR880006772A (ko) 1988-07-25
FR2606211A1 (fr) 1988-05-06
FR2606211B1 (fr) 1991-07-12
KR890002811B1 (ko) 1989-07-31
DE3735818A1 (de) 1988-05-11

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732 Registration of transactions, instruments or events in the register (sect. 32/1977)
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)