GB2148540A - Lithographic mask - Google Patents
Lithographic mask Download PDFInfo
- Publication number
- GB2148540A GB2148540A GB8424302A GB8424302A GB2148540A GB 2148540 A GB2148540 A GB 2148540A GB 8424302 A GB8424302 A GB 8424302A GB 8424302 A GB8424302 A GB 8424302A GB 2148540 A GB2148540 A GB 2148540A
- Authority
- GB
- United Kingdom
- Prior art keywords
- base plate
- mask
- film
- mask structure
- magnetic material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000696 magnetic material Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 19
- 230000000873 masking effect Effects 0.000 claims description 18
- 238000001459 lithography Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 abstract description 7
- 229910052742 iron Inorganic materials 0.000 abstract description 6
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 4
- 229910001369 Brass Inorganic materials 0.000 abstract description 3
- 239000010951 brass Substances 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58177288A JPS6068341A (ja) | 1983-09-26 | 1983-09-26 | リソグラフィ−用マスク構造体 |
| JP58177287A JPS6068340A (ja) | 1983-09-26 | 1983-09-26 | Ｘ線リソグラフィー用マスク構造体の保持方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8424302D0 GB8424302D0 (en) | 1984-10-31 |
| GB2148540A true GB2148540A (en) | 1985-05-30 |
Family
ID=26497885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8424302A Withdrawn GB2148540A (en) | 1983-09-26 | 1984-09-26 | Lithographic mask |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE3435178A1 (de) |
| GB (1) | GB2148540A (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2233117A (en) * | 1989-04-20 | 1991-01-02 | Samsung Electronics Co Ltd | X-ray mask |
| CN104391426A (zh) * | 2014-11-21 | 2015-03-04 | 胜科纳米（苏州）有限公司 | 一种掩膜版 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07101663B2 (ja) * | 1987-02-09 | 1995-11-01 | キヤノン株式会社 | マスク保持装置 |
| US4963921A (en) * | 1985-06-24 | 1990-10-16 | Canon Kabushiki Kaisha | Device for holding a mask |
| DE3620970A1 (de) * | 1985-06-24 | 1987-01-08 | Canon Kk | Maskenhaltevorrichtung |
| JP2001100395A (ja) * | 1999-09-30 | 2001-04-13 | Toshiba Corp | 露光用マスク及びその製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1452116A (en) * | 1972-12-29 | 1976-10-13 | Rca Corp | Method of depositing a pattern of metal areas |
| GB1499294A (en) * | 1975-06-30 | 1978-01-25 | Ibm | Manufacture of masks |
| GB1544787A (en) * | 1976-06-15 | 1979-04-25 | Siemens Ag | Masks for x-ray lithography |
-
1984
- 1984-09-25 DE DE19843435178 patent/DE3435178A1/de not_active Withdrawn
- 1984-09-26 GB GB8424302A patent/GB2148540A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1452116A (en) * | 1972-12-29 | 1976-10-13 | Rca Corp | Method of depositing a pattern of metal areas |
| GB1499294A (en) * | 1975-06-30 | 1978-01-25 | Ibm | Manufacture of masks |
| GB1544787A (en) * | 1976-06-15 | 1979-04-25 | Siemens Ag | Masks for x-ray lithography |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2233117A (en) * | 1989-04-20 | 1991-01-02 | Samsung Electronics Co Ltd | X-ray mask |
| CN104391426A (zh) * | 2014-11-21 | 2015-03-04 | 胜科纳米（苏州）有限公司 | 一种掩膜版 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8424302D0 (en) | 1984-10-31 |
| DE3435178A1 (de) | 1985-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007036222A (ja) | 半導体処理装置において熱膨張差を有する材料間の結合に有用なシーリングデバイス及び方法 | |
| US5065506A (en) | Method of manufacturing circuit board | |
| US20040232109A1 (en) | Mask unit and film deposition apparatus using the same | |
| CN114300640B (zh) | 掩模制造方法及掩模 | |
| GB2148540A (en) | Lithographic mask | |
| JP2001028334A (ja) | Ｘ線用マスクのペリクルの構造およびその製造 | |
| JPH06216224A (ja) | 静電チャック及びその作製方法並びに基板処理装置及び基板搬送装置 | |
| US4454209A (en) | High resolution soft x-ray or ion beam lithographic mask | |
| US5112707A (en) | Mask structure for lithography | |
| JPS61134762A (ja) | リソグラフイ−用マスク構造体 | |
| JPS61134765A (ja) | リソグラフイ−用マスク構造体 | |
| GB2089524A (en) | High Resolution Lithographic Progress | |
| JPS60198820A (ja) | リソグラフイ−用マスク構造体 | |
| KR100223023B1 (ko) | X-선 마스크 | |
| JPS61134764A (ja) | リソグラフイ−用マスク構造体 | |
| JPH0564454B2 (de) | ||
| US4557986A (en) | High resolution lithographic process | |
| JP2000058706A (ja) | Ｂｇａ型半導体装置とその製造方法 | |
| JPH0563933B2 (de) | ||
| RU2350995C2 (ru) | Литографическая маска для liga-технологии и способ ее изготовления | |
| JPS6236669A (ja) | 転写マスクおよびその製造方法 | |
| JPS62118350A (ja) | 粒子線又は輻射線で照射し得るマスクとその作製方法 | |
| JPH0428132B2 (de) | ||
| JPS635522A (ja) | Ｘ線露光用マスクの製造方法 | |
| JPS63194332A (ja) | リソグラフイ−用マスク構造体およびリソグラフイ−法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |