GB2124427B - Insulated gate semiconductor devices - Google Patents

Insulated gate semiconductor devices

Info

Publication number
GB2124427B
GB2124427B GB08317467A GB8317467A GB2124427B GB 2124427 B GB2124427 B GB 2124427B GB 08317467 A GB08317467 A GB 08317467A GB 8317467 A GB8317467 A GB 8317467A GB 2124427 B GB2124427 B GB 2124427B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
insulated gate
gate semiconductor
insulated
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08317467A
Other languages
English (en)
Other versions
GB8317467D0 (en
GB2124427A (en
Inventor
Victor Albert Keith Temple
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB8317467D0 publication Critical patent/GB8317467D0/en
Publication of GB2124427A publication Critical patent/GB2124427A/en
Application granted granted Critical
Publication of GB2124427B publication Critical patent/GB2124427B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0102—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode
    • H10D84/0105—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode the built-in components being field-effect devices
GB08317467A 1982-07-08 1983-06-28 Insulated gate semiconductor devices Expired GB2124427B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39622682A 1982-07-08 1982-07-08

Publications (3)

Publication Number Publication Date
GB8317467D0 GB8317467D0 (en) 1983-08-03
GB2124427A GB2124427A (en) 1984-02-15
GB2124427B true GB2124427B (en) 1986-01-08

Family

ID=23566380

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08317467A Expired GB2124427B (en) 1982-07-08 1983-06-28 Insulated gate semiconductor devices

Country Status (4)

Country Link
JP (1) JPS5936970A (enrdf_load_stackoverflow)
DE (1) DE3322669C2 (enrdf_load_stackoverflow)
FR (1) FR2530079B1 (enrdf_load_stackoverflow)
GB (1) GB2124427B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3346286A1 (de) * 1982-12-21 1984-06-28 International Rectifier Corp., Los Angeles, Calif. Hochleistungs-metalloxid-feldeffekttransistor- halbleiterbauteil
JP2552880B2 (ja) * 1986-11-12 1996-11-13 シリコニックス・インコーポレイテッド 垂直ｄｍｏｓセル構造
GB8810973D0 (en) * 1988-05-10 1988-06-15 Stc Plc Improvements in integrated circuits
JPH06244429A (ja) * 1992-12-24 1994-09-02 Mitsubishi Electric Corp 絶縁ゲート型半導体装置及びその製造方法
JP5213520B2 (ja) * 2008-05-14 2013-06-19 三菱電機株式会社 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
US4212683A (en) * 1978-03-27 1980-07-15 Ncr Corporation Method for making narrow channel FET
CA1138571A (en) * 1978-12-15 1982-12-28 Wolfgang M. Feist Semiconductor structures and manufacturing methods
FR2460542A1 (fr) * 1979-06-29 1981-01-23 Thomson Csf Transistor a effet de champ vertical de puissance pour hautes frequences et procede de realisation d'un tel transistor
DE2926874A1 (de) * 1979-07-03 1981-01-22 Siemens Ag Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide

Also Published As

Publication number Publication date
GB8317467D0 (en) 1983-08-03
JPH0363210B2 (enrdf_load_stackoverflow) 1991-09-30
FR2530079A1 (fr) 1984-01-13
GB2124427A (en) 1984-02-15
FR2530079B1 (fr) 1985-07-26
DE3322669A1 (de) 1984-01-12
JPS5936970A (ja) 1984-02-29
DE3322669C2 (de) 1986-04-24

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years