GB2093048B - Positive resist copolymer and method for manufacturing a pattern therewith - Google Patents

Positive resist copolymer and method for manufacturing a pattern therewith

Info

Publication number
GB2093048B
GB2093048B GB8201246A GB8201246A GB2093048B GB 2093048 B GB2093048 B GB 2093048B GB 8201246 A GB8201246 A GB 8201246A GB 8201246 A GB8201246 A GB 8201246A GB 2093048 B GB2093048 B GB 2093048B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
positive resist
resist copolymer
pattern therewith
therewith
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8201246A
Other languages
English (en)
Other versions
GB2093048A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP826681A external-priority patent/JPS57122430A/ja
Priority claimed from JP13935381A external-priority patent/JPS5840827A/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of GB2093048A publication Critical patent/GB2093048A/en
Application granted granted Critical
Publication of GB2093048B publication Critical patent/GB2093048B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/10—Homopolymers or copolymers of methacrylic acid esters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/109—Polyester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
GB8201246A 1981-01-22 1982-01-18 Positive resist copolymer and method for manufacturing a pattern therewith Expired GB2093048B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP826681A JPS57122430A (en) 1981-01-22 1981-01-22 Positive type resist material with dry etching resistance
JP13935381A JPS5840827A (ja) 1981-09-04 1981-09-04 レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
GB2093048A GB2093048A (en) 1982-08-25
GB2093048B true GB2093048B (en) 1984-09-19

Family

ID=26342757

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8201246A Expired GB2093048B (en) 1981-01-22 1982-01-18 Positive resist copolymer and method for manufacturing a pattern therewith

Country Status (6)

Country Link
US (1) US4430419A (en, 2012)
CA (1) CA1211600A (en, 2012)
DE (1) DE3201815A1 (en, 2012)
FR (1) FR2498198B1 (en, 2012)
GB (1) GB2093048B (en, 2012)
NL (1) NL186119C (en, 2012)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4548893A (en) * 1981-04-20 1985-10-22 Gte Laboratories Incorporated High resolution lithographic resist and method
DE3446074A1 (de) * 1984-12-18 1986-06-19 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur herstellung von roentgen-resists
US4748101A (en) * 1985-01-14 1988-05-31 Hoechst Celanese Corporation Overlay proofing film
US4842950A (en) * 1985-01-14 1989-06-27 Hoechst Celanese Corporation Overlay proofing film
JPH01161718A (ja) * 1987-12-18 1989-06-26 Toshiba Corp Ｘ線マスクの製造方法
US5175075A (en) * 1989-11-30 1992-12-29 Texas Instruments Incorporated Positron beam lithography
DE69322946T2 (de) * 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
JP2688168B2 (ja) 1992-11-03 1997-12-08 インターナショナル・ビジネス・マシーンズ・コーポレイション フォトレジストイメージ形成プロセス
US7278988B2 (en) 2000-12-15 2007-10-09 Kimberly-Clark Worldwide, Inc. Dual-use pantiliner
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
KR101647158B1 (ko) * 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535137A (en) 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
US3984582A (en) 1975-06-30 1976-10-05 Ibm Method for preparing positive resist image
US4130424A (en) * 1976-08-06 1978-12-19 Bell Telephone Laboratories, Incorporated Process using radiation curable epoxy containing resist and resultant product
JPS5321287A (en) * 1976-08-11 1978-02-27 Toshiba Corp Preparation of positive radiation sensitive material
US4087569A (en) * 1976-12-20 1978-05-02 International Business Machines Corporation Prebaking treatment for resist mask composition and mask making process using same
JPS53116831A (en) * 1977-03-23 1978-10-12 Toshiba Corp Radioactive-ray sensitive material
JPS5466829A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Pattern formation materil
JPS5568630A (en) * 1978-11-17 1980-05-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Pattern formation

Also Published As

Publication number Publication date
NL186119C (nl) 1990-09-17
GB2093048A (en) 1982-08-25
NL186119B (nl) 1990-04-17
DE3201815A1 (de) 1982-10-07
DE3201815C2 (en, 2012) 1988-07-21
CA1211600A (en) 1986-09-16
FR2498198A1 (fr) 1982-07-23
FR2498198B1 (fr) 1986-10-10
NL8200211A (nl) 1982-08-16
US4430419A (en) 1984-02-07

Similar Documents

Publication Publication Date Title
EP0262691A3 (en) A modified block copolymer
DE3478060D1 (en) Method for forming resist pattern
DE3260845D1 (en) Copolymer and method for manufacture thereof
GB8411412D0 (en) Forming resist pattern
DE3470965D1 (en) Resist structure and processes for making and patterning it
EP0069854A3 (en) Method of forming a pattern of openings in a layer of a positive resist system and method of forming via holes
DE3561771D1 (en) Dry resist film and process for producing resist patterns
DE3278182D1 (en) Method for manufacturing a mask type read only memory
DE3466741D1 (en) Process for forming pattern with negative resist
GB2093048B (en) Positive resist copolymer and method for manufacturing a pattern therewith
JPS57180129A (en) Method and device for forming polymerized resist
DE3269563D1 (en) Process for forming resist patterns
GB2101301B (en) Detecting a particle agglutination pattern
DE3360330D1 (en) Method and device for manufacturing a coreyarn
DE3166133D1 (en) Method of forming a microscopic pattern, and a photoresist
DE3477709D1 (en) Method for manufacturing a shadow mask
DE3277646D1 (en) Photosensitive resin composition and method for forming fine patterns with said composition
DE3474028D1 (en) Method of manufacturing a copolymer of trioxane
EP0153854A3 (en) Process for forming a pattern film
GB2115422B (en) A polymeric polydonor complexon and the method for preparation thereof
EP0164598A3 (en) Photosensitive resin composition and process for forming photo-resist pattern using the same
GB2111897B (en) Making patterns on concrete
GB2159836B (en) Copper-nickel-tin-titanium-alloy and a method for its manufacture
DE3161335D1 (en) Cis-6-undecene-1-chloride and a method for the preparation thereof
GB2102122B (en) Detecting defects in a pattern

Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20020117