GB2082384A - Oxidation of silicon wafers - Google Patents

Oxidation of silicon wafers Download PDF

Info

Publication number
GB2082384A
GB2082384A GB8124252A GB8124252A GB2082384A GB 2082384 A GB2082384 A GB 2082384A GB 8124252 A GB8124252 A GB 8124252A GB 8124252 A GB8124252 A GB 8124252A GB 2082384 A GB2082384 A GB 2082384A
Authority
GB
United Kingdom
Prior art keywords
process according
percent
hydrogen chloride
wafer
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8124252A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2082384A publication Critical patent/GB2082384A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
GB8124252A 1980-08-11 1981-08-07 Oxidation of silicon wafers Withdrawn GB2082384A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17690180A 1980-08-11 1980-08-11

Publications (1)

Publication Number Publication Date
GB2082384A true GB2082384A (en) 1982-03-03

Family

ID=22646361

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8124252A Withdrawn GB2082384A (en) 1980-08-11 1981-08-07 Oxidation of silicon wafers

Country Status (5)

Country Link
JP (1) JPS5754331A (enrdf_load_stackoverflow)
DE (1) DE3131086A1 (enrdf_load_stackoverflow)
FR (1) FR2488443A1 (enrdf_load_stackoverflow)
GB (1) GB2082384A (enrdf_load_stackoverflow)
NL (1) NL8103752A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606935A (en) * 1985-10-10 1986-08-19 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
EP0577262A3 (en) * 1992-05-29 1994-10-12 Olin Corp Use of oxalyl chloride for the formation of a layer of SiO2 doped with chlorine on a silicon substrate.

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0518182Y2 (enrdf_load_stackoverflow) * 1985-01-25 1993-05-14

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2026156A1 (en) * 1970-05-29 1971-12-09 Licentia Gmbh Thermal oxidizer for solid bodies - using water vapour - enriched carrier gas as oxidant
CA936791A (en) * 1970-11-10 1973-11-13 Northern Electric Company Limited Method of reducing the mobile ion contamination in thermally grown silicon dioxide
US4167915A (en) * 1977-03-09 1979-09-18 Atomel Corporation High-pressure, high-temperature gaseous chemical apparatus
NL7903198A (nl) * 1979-04-24 1980-10-28 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd volgens de werkwijze.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606935A (en) * 1985-10-10 1986-08-19 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
US4674442A (en) * 1985-10-10 1987-06-23 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
EP0218177A3 (en) * 1985-10-10 1989-04-26 International Business Machines Corporation A process for producing a high purity oxide layer on a semiconductor substrate
EP0577262A3 (en) * 1992-05-29 1994-10-12 Olin Corp Use of oxalyl chloride for the formation of a layer of SiO2 doped with chlorine on a silicon substrate.

Also Published As

Publication number Publication date
FR2488443A1 (fr) 1982-02-12
DE3131086A1 (de) 1982-03-25
NL8103752A (nl) 1982-03-01
JPS5754331A (enrdf_load_stackoverflow) 1982-03-31

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)