GB2053568A - A chip type electronic component - Google Patents
A chip type electronic component Download PDFInfo
- Publication number
- GB2053568A GB2053568A GB8016039A GB8016039A GB2053568A GB 2053568 A GB2053568 A GB 2053568A GB 8016039 A GB8016039 A GB 8016039A GB 8016039 A GB8016039 A GB 8016039A GB 2053568 A GB2053568 A GB 2053568A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electronic component
- resin
- chip type
- type electronic
- metal foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011347 resin Substances 0.000 claims abstract description 74
- 229920005989 resin Polymers 0.000 claims abstract description 74
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- 239000011888 foil Substances 0.000 claims abstract description 30
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000003990 capacitor Substances 0.000 claims abstract description 27
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 27
- 239000007787 solid Substances 0.000 claims abstract description 12
- 238000005520 cutting process Methods 0.000 claims abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- ROSDCCJGGBNDNL-UHFFFAOYSA-N [Ta].[Pb] Chemical compound [Ta].[Pb] ROSDCCJGGBNDNL-UHFFFAOYSA-N 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 5
- 238000004382 potting Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 abstract description 12
- 239000011889 copper foil Substances 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000004848 polyfunctional curative Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000006258 conductive agent Substances 0.000 description 1
- 239000012611 container material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004590 silicone sealant Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
- H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
- H01G2/065—Mountings specially adapted for mounting on a printed-circuit support for surface mounting, e.g. chip capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/028—Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/08—Housing; Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
A chip type electronic component includes a resin frame 21, two metal foil terminals 31, 32 bonded to respective ends of the frame and an electronic component element 1, such as a tantalum solid electrolytic capacitor element, enclosed in the frame. At least one of the frame ends and associated metal foil terminal has a slit 4 for accepting lead wires 5a, 5b of the element 1, the lead wires being connected to the respective terminals. Insulating resin 22 is potted in the space remaining in the frame. Methods for making such components include fabricating a number of frames 21 connected together from a piece, e.g. a sheet, of resin and cutting the piece so as to separate the frames once the individual components have otherwise been completed. <IMAGE>
Description
SPECIFICATION
A chip type electronic component and method for making the same
This invention relates to a chip type electronic component particularly to tantalum chip capacitor, which has terminal electrodes of metal foil bonded rigidly to resin package.
Recently, chip type electronic components have been widely employed in an electronic circuit in accordance with demands for miniaturization in value or in thickness of electronic apparatus. The terminal construction of chip resistor or chip ceramic capacitor characterized by glazed silver electrode terminals formed on ends of a ceramic substrate or a dielectric substrate gives high volume efficiency and good size tolerance to the chip component. However, a chip type electronic element having a terminal of lead wire such as tantalum solid electrolytic capacitor element is not easily formed into chip component in such good volume efficiency and good size tolerance as compared with a ceramic chip capacitor.
Better volume efficiency of tantalum chip capacitor is obtained by packaging the element with thinner covering or coating. The thinner outside coating of the element is conventionally obtained by employing a metal case or a sleeve.
However, such a packaging means does not give a good size tolerance at lower cost. Further, transfer molding method is known to give a good size tolerance. However, it does not give good volume efficiency. It is a desirable feature for components made by transfer mold method that a pair of metal plate terminals as thin and wide as possible are bonded to ends of package. Such terminals are not strongly bonded to ends of package after transfer molding because terminals are conventionally bent without injuring the inner element.
An object of the present invention is to provide a chip component having a high volume efficiency at lower cost.
Another object of the present invention is to provide a chip component having a mechanically strongly bonded metal foil terminal on both ends of resin package.
Yet another object of the present invention is to provide a chip component having a wide insulating area at underside facing to a circuit board.
Electronic components applicable for the present invention are various kind of electronic elements such as capacitors, resistors, diodes and other electronic elements besides an element of tantalum solid electrolytic capacitor.
These and other objects and features of the invention can be more clearly understood with reference to the attached drawings which illustrate preferred embodiments of the present invention, wherein:
FIG. 1 to FIG. 4 show (a) perspective views and (b) cross-sectional views of chip type electronic components according to the present invention; and
FIG. 5 to FIG. 7 schematicaily show processes of making a chip component according to the present invention.
Referring now to FIG. 1 to FIG. 3, a pair of metal foils 3 (31, 32) as a pair of terminals of the chip component are bonded to both ends of resin frame 21 which encloses an electronic element 1.
Construction of package characterized by the present invention is that insulating resin package 2 has resin frame 21 and potted resin 22 formed by distinct step. A pair of metal foils 3 as terminals of a chip component are bonded rigidly to both ends of resin frame 22 by adhesive agent. An electronic element 1 is enclosed in the resin frame.
Element terminal lead wires ( 1 sot type element terminal) 5a and 5b are inserted through a slit 4 formed through the metal foil 3 and resin frame 21 and electrically connected to metal foil 3. The metal foil 3 consists of copper, nickel, iron or an alloy of these metals. Excellent solderable metal such as tin, silver or solder is preferred to be coated on the metal layer. The metal foil is preferred to consist of copper on which an element lead wire is connected by solder, or electric conductive paste such as silver conductive paste. The metal foil is further preferred to consist of such a metal as nickel, iron or an alloy of these metals to which a terminal wire of element such as tantalum lead wire of tantalum capacitor element is connected by welding.In the case of welding described above, nickel plated copper as a terminal foil can also be used.
Construction of resin enclosure 2 in FIG. 2 is different from that of FIG. 1. In FIG. 1, resin frame between which electronic element is to be enclosed has no bottom. Meanwhile, in FIG. 2, resin frame in which electronic element 1 is to be enclosed is a groove having a bottom.
Composition of the frame resin 21 may be either the same as or different from the potted resin 22. For example, chip component of light emitting diode according to the present invention is produced by employing non-transparent resin as the frame resin and transparent resin as the potted resin, respectivity.
Another electrical connection between the metal layer and electronic element will be described below for an electronic element having at least one element terminal which is formed on the surface portion of the element (2nd type of element terminal) by means of coated silver or solder metal instead of lead wire terminal described above. In such a case shown in FIG. 3 and FIG. 4, element terminal is electrically connected by employing additional lead ribbons or wires 17 in FIG. 3 and 6a and 6b in FIG. 4 setting round about frame resin or through slits of the resin frame and metal foils 31 and 32, by means of adhesive conductive agent such as solder or conductive paste.
Processes of making a chip component according to the present invention are shown in FIG. 5 to
FIG. 7. Although the present invention will be described in connection with a chip tantalum solid electrolytic capacitor, the present invention is not limited to tantalum capacitor and applicable to any other electronic components in general.
A method for making a chip type electronic component will be described below in connection with a chip type tantalum solid electrolytic capacitor.
In FIG. 5(a), an insulating resin plate 7 bonded by adhesive agent on a side thereof with copper foil 8 of about 35 micron thick and another side with nickel foil 9 of 30 to 100 microns thick is provided. Thickness of the insulating resin plate corresponds to the length of chip component to be produced. In FIG. 5(b), the metal bonded resin plate is sliced into slabs 10 of 1.3 mm thick. In
FIG. 5 (c), the open spaces like hole 11 for electronic elements to be enclosed in one by one are provided in the resin 7 and slits 1 2 from holes through resin to outside of the metal foil are provided. Width of the slit 12 is preferred to be slightly longer than a diameter of element lead wire, and the depth of the slit 12 is preferred to be about half a thickness of the slab.In next step shown in FIG. 5(d), tantalum solid electrolytic capacitor elements are inserted in the holes 11.
Each of the cathodes of the capacitor elements 1 is electrically connected to the outside copper foil 8 by means of metal wire or ribbon with a conductive adhesive agent such as silver paste or solder in a manner shown in FIG. 3 or 4. A tantalum capacitor element mentioned here is made in a manner well known in prior art described below.
Tantalum sintered anode of 0.7 mm diameter and 1.3 mm length having a 0.2 mm tantalum terminal lead wire at the end is anodically oxidized. By the anodic oxidation, dielectric tantalum oxide film is formed on surface of the tantalum metal. Layers of manganese dioxide, colloidal graphite and silver as a cathode is formed on the dielectric film in order. The silver paste layer corresponds to the second type element terminal and tantalum lead wire to the first type element terminal as previously described.
In FIG. 5(e), the hole 11 in which tantalum capacitor element enclosed is filled with liquidous resin such as epoxy resin containing hardener 1 5 to the top surface of the resin frame 7. Before putting the resin, outside of the slits 12 and underside of the hole 11 are sealed with adhesive tape, grease or another sealing material in order to prevent leakage of the filled resin. After curing of the epoxy resin, stains on the surface of the slab are removed if necessary. Tantalum wire 14 is electrically connected to nickel foil 9 by welding.
Other work after welding is cut to be divided into individual chip components along at the center position between adjacent two slits shown by broken line in FIG. 5(e). FIG. 5(f) shows thus produced chip tantalum capacitor.
In FIG. 6 (a), a container 1 6 for a chip component shown in FIG. 2 or 3 according to the presentinvention is illustrated. The container comprises a resin 7, a groove 1 6 formed on resin part 7 of the slab 10, and slits through at least one side of the container brims. In FIG. 6(b), a plurality of tantalum solid electrolytic capacitor elements 18 are inserted in the groove 1 6. After insert of the element, chip components are finished as previously described.
Another method for making a chip component according to the present invention is described below. Although tantalum solid electrolytic capacitor elements are employed as elements to be enclosed, the present invention is not limited to tantalum chip capacitor and applicable to any other electronic components in general.
In this example, a rather thinner glass-epoxy resin laminate on a side of which metal foil is bonded is used as a container material in place of the material shown in FIG. 5 (a). The copper bonded resin laminate is commercially available as a material for flexible printed circuit board.
In FIG. 7 (a), copper bonded sheet having a base insulating resin laminate 41 such as glassepoxy resin laminate and a copper foil 42 of 35 microns thick bonded on a side of the laminate is cut into a rectangular sheet 40 of 6 mm wide and conveniently long. Slits 44 located in a regular interval are provided at one edge portion of the sheet 40. The slit 44 has size of 0.35 mm wide and 0.7 mm long. Interval of the slits is 2 mm. In
FIG. 7(b), nickel metal layer of about 50 microns and 1.5 mm wide is plated on the copper foil 42 in the portion from the edge where slits locate.
Two scratches in straight line 46 are provided on surface of the base resin 41 parallel to and apart by 1.5 mm distance from both width ends of the sheet 40 as deep as possible in the base resin by using a scratching tool. The scratches are necessary to avoid breaking of the base resin due to its brittleness in the following bending step. The scratches 56, therefore, should not be so deep as to reach the copper foil 42. In FIG. 7 (c), the scratched rectangular sheet 40 is bent by substantially 900 along the scratches in a manner that resin sides, after bending, face each other and are formed into a U-shaped container 60 for electronic element to be enclosed in. Thus produced container 60 of about 3 mm width at bottom and 1.5 mm height has a strength tolerable to keep the U-shape by mechanical strength of the copper foil. In FIG. 7(d), an end of copper ribbon as an electric connection means is connected onto copper foil 42 in a manner such as soldering, and another end is introduced onto the bottom of the U-shaped container 60 beyond brim of the container. In FIG. 7(e), a plurality of tantalum solid capacitor elements 48 are inserted into the container 60 in order, and each cathode of the tantalum capacitor elements is electrically connected to each copper ribbon 47 with an electric conductive adhesive agent such as solder or silver paste. Electric conductive adhesive agent is applied on either on both of the copper ribbon and the cathode surface of the capacitor element preliminarily before element inserting.Tantalum solid capacitor element employed in this method has a size of 1 Ox 1.2 1.9 mm3 in brick-shape and has a tantalum lead wire at an end.
In FIG. 7(f), liquidous resin such as epoxy resin containing hardener 41 is potted in the container.
Preliminarily before epoxy resin potting, slits and ends of the container are required to be sealed for the purpose of avoiding resin leakage by means of any suitable sealant such as silicone resin or UVresin (resin which is solidified by ultra-violet ray) having a rather high viscosity. The potted resin is cured. After curing, sealant and stains are removed if necessary. In FIG. 7 (g), copper foil 42 of 2 mm wide at center of under-side of container is removed by means of grinding or chemical etching. Consequently, remaining copper foils become both terminals of a chip component.
Tantalum lead wire 59 is bent to be attached to nickel layer 45 and welded by means of resistance welder having parallel gap electrodes.
The work after welding is cut to be divided into individual chip components along the center position between adjacent two slits shown by broken line in FIG. 6(h). FIG. 6(i) illustrates thus produced chip component.
In the method according to FIG. 7, the copper foil on underside of the container is removed after tantalum welding step as shown in FIG. 7(g).
However, the removal of copper foil may be carried out after the rectangular sheet providing step.
In the above method, furthermore, tantalum capacitor element is employed as a component element and consequently nickel plated layer is required on copper foil for the purpose of welding tantalum wire to component terminal. However, nickel plated layer is not necessary in the case that the component element has soldemble lead wires.
Solder coating on copper foil and nickel layer is further preferred in view of superior solderability to a circuit board.
In place of electrical connection between tantalum cathode layer and component terminal
42a by copper ribbon 47, the connection may be
carried out by soldering through metal plated hole
cut through at a position on component terminal
which end reverse to tantalum capacitor element
lead wire faces.
Moreover, a method in which resin is potted
and cured under being free from its leakage out of
slits without sealant will be described below. For
the container shown in FIG. 6(b) and FIG. 7(e),
both ends of the groove are preliminarily banked
with sealant such as silicone sealant before resin
potting. For the container shown in FIG. 5(d), the
under-side of holes are sealed with adhesive tape
before resin potting. The container is no sooner
potted with resin such as liquidous epoxy resin
containing hardener than the container is turned
upside down before the resin leaks from the slits.
Under the condition that the opening of the
container is faced downwards, the resin is cured.
Under the condition that the opening of the
container is faced downwards, the resin of the
ordinary viscosity does not drop out and leak out
from the slit as far as the width of the container opening is narrow as less than about 10 mm.
In accordance with the previous description, the terminal electrodes of the chip component according to the present invention is much resistant to peeling off. This is firstly because the thin metal foil of the terminal is resistant to the peeling force by, for example, the difference of thermal expansion coefficient of the metal and the frame resin. It is secondly because the metal foil can be strongly bonded to the resin frame under the more favorable condition such as high pressure or high temperature by using adhesive agent without any fear of element injurying because of bonding before element enclosure.
Claims (14)
1. A chip type electronic component comprising an insulating resin frame having two opposite ends; two substantially flat metal foil terminals bonded to the ends of said frame, at least one of said frame ends having a slit through said frame opening to the outside of said metal foil terminal; an electronic component element having two element terminals enclosed in said frame, each of said element terminals being connected electrically to a respective said metal foil terminal; and insulating resin potted in the space remaining inside of said frame.
2. A chip type electronic component according to Claim 1, wherein said electronic component is a solid tantalum electrolytic capacitor.
3. A chip type electronic component according to Claim 1, wherein said electronic component is a light emitting diode.
4. A chip type electronic component according to Claim 3, wherein said potted insulating resin is transparent resin.
5. A chip type electronic component according to any one of the preceding claims wherein said metal foil terminal is made of copper or nickel.
6. A method of making a chip type electronic component, comprising the steps of:
(a) bonding metal foil onto both sides of an insulating resin plate with adhesive agent;
(b) cutting the metal bonded insulating resin plate into slabs;
(c) providing open spaces in each said slot in which spaces electronic components are to be containable, and slits opening to the outside of at least one of said metal foils on the ends of the resin of said slab;
(d) inserting electronic component elements in said open spaces;
(e) potting liquidous insulating resin therein and curing the liquidous resin;
(f) connecting electrically each of said element terminals to said metal foil after curing of the potted insulating resin; and
(g) cutting the thus cured work into individual components.
7. A method of making a chip type electronic component, comprising the steps of:
(h) providing a metal clad resin sheet in a rectangular form and having a plurality of slits located at regular intervals along at least one longer edge portion of said sheet, said sheet comprising insulating resin laminate and metal foil bonded on said resin laminate with adhesive agent;
(i) providing a container of U-shaped form by bending said metal clad resin sheet along lines parallel to the longer edges of said rectangular sheet through substantially a right angle in a manner that the resin sides face each other;
(j) inserting a plurality of electronic component elements in said container at regular intervals;
(k) connecting electrically terminals of each of said electronic component elements to said metal foil on the outside surface of said container by electric conducting means;;
(I) filling said container with a liquidous insulating resin and curing said liquidous resin
(m) removing a portion of the metal foil on the underside of said container so as to form a pair of component terminals of the remaining metal foil; and
(n) cutting said cured container between adjacent component elements into individual components.
8. A method of making a chip type electronic component according to Claim 6 or 7, wherein said electronic component elements are tantalum solid electrolytic capacitors of which anode leads are inserted in said slits and welded to said metal foil, and of which cathodes are electrically connected to said metal layer by means of lead - ribbons, the metal foil component terminal which is to remain as an anode terminal being plated with a nickel layer for welding with a tantalum lead.
9. A method of making a chip type electronic component according to Claim 7, which further comprises the step of providing grooves for bending on the bending lines on the resin side of the metal clad resin sheet, which step is carried out between said steps (h) and (i).
10. A method of making a chip type electronic component according to Claim 7 or 9, wherein said electric conducting means comprises solder fed through a hole at a position facing a terminal of each said electronic component element.
11. A method of making a chip type electronic component according to Claim 7, 9 or 10 wherein said step (m) is carried out between said steps (h) and (i).
12. A method of making a chip type electronic component according to any one of Claims 6 to 11, wherein the step of curing the liquidous resin is carried out with the opening of said container facing downwards.
13. A method of making a chip type electronic component, substantially as hereinbefore described with reference to Figure 5, 6 or 7 of the accompanying drawings.
14. A chip type electronic component substantially as hereinbefore described with reference to any one of Figures 1 to 4 of the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54061834A JPS6041847B2 (en) | 1979-05-18 | 1979-05-18 | Manufacturing method for chip-type electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2053568A true GB2053568A (en) | 1981-02-04 |
| GB2053568B GB2053568B (en) | 1983-12-14 |
Family
ID=13182514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8016039A Expired GB2053568B (en) | 1979-05-18 | 1980-05-15 | Chip type electronic component |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS6041847B2 (en) |
| DE (1) | DE3018846A1 (en) |
| FR (1) | FR2457005A1 (en) |
| GB (1) | GB2053568B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2140207A (en) * | 1980-12-08 | 1984-11-21 | Gao Ges Automation Org | Assemblies of an ic module and a carrier |
| GB2294583A (en) * | 1994-10-26 | 1996-05-01 | George Tai | Method of making semiconductor diodes |
| WO2003003394A1 (en) * | 2001-06-28 | 2003-01-09 | Epcos Ag | Capacitor |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3134617C2 (en) * | 1981-09-01 | 1989-11-02 | Ernst Roederstein Spezialfabrik für Kondensatoren GmbH, 8300 Landshut | Foil capacitor |
| US4488204A (en) * | 1983-11-01 | 1984-12-11 | Union Carbide Corporation | Device for use in making encapsulated chip capacitor assemblies |
| DE3619311A1 (en) * | 1986-06-07 | 1987-12-10 | Telefunken Electronic Gmbh | Solar generator of high area efficiency |
| DE3638342A1 (en) * | 1986-11-10 | 1988-05-19 | Siemens Ag | Electrical component, made of ceramic and having multilayer metallisation, and a method for its production |
| ATE69908T1 (en) * | 1987-05-05 | 1991-12-15 | Siemens Ag | ELECTRICAL COMPONENT IN CHIP CONSTRUCTION AND PROCESS FOR ITS MANUFACTURE. |
| DE59008794D1 (en) * | 1989-09-19 | 1995-05-04 | Siemens Ag | Method for producing a solid electrolytic capacitor in chip design with a fuse element. |
| JP3520776B2 (en) * | 1998-05-28 | 2004-04-19 | 株式会社村田製作所 | Electronic components |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3221089A (en) * | 1960-07-01 | 1965-11-30 | James H Cotton | Method for capacitor fabrication |
| US3345544A (en) * | 1965-05-17 | 1967-10-03 | Mallory & Co Inc P R | Solid aluminum capacitors having a proted dielectric oxide film |
| FR1566728A (en) * | 1968-03-29 | 1969-05-09 | ||
| FR2054755A5 (en) * | 1969-07-25 | 1971-05-07 | Asscher Jean | |
| FR2079769A6 (en) * | 1970-02-02 | 1971-11-12 | Asscher Jean Claude | |
| US4247883A (en) * | 1978-07-31 | 1981-01-27 | Sprague Electric Company | Encapsulated capacitor |
-
1979
- 1979-05-18 JP JP54061834A patent/JPS6041847B2/en not_active Expired
-
1980
- 1980-05-15 GB GB8016039A patent/GB2053568B/en not_active Expired
- 1980-05-16 FR FR8011055A patent/FR2457005A1/en active Granted
- 1980-05-16 DE DE19803018846 patent/DE3018846A1/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2140207A (en) * | 1980-12-08 | 1984-11-21 | Gao Ges Automation Org | Assemblies of an ic module and a carrier |
| GB2294583A (en) * | 1994-10-26 | 1996-05-01 | George Tai | Method of making semiconductor diodes |
| GB2294583B (en) * | 1994-10-26 | 1998-05-06 | George Tai | Semiconductor diode and method of making semiconductor diodes |
| WO2003003394A1 (en) * | 2001-06-28 | 2003-01-09 | Epcos Ag | Capacitor |
| US7330347B2 (en) | 2001-06-28 | 2008-02-12 | Kemet Electronics Corporation | Capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55153361A (en) | 1980-11-29 |
| JPS6041847B2 (en) | 1985-09-19 |
| FR2457005A1 (en) | 1980-12-12 |
| FR2457005B1 (en) | 1984-04-06 |
| GB2053568B (en) | 1983-12-14 |
| DE3018846C2 (en) | 1989-07-27 |
| DE3018846A1 (en) | 1980-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19950515 |