GB201207448D0 - Method of depositing silicon dioxide films - Google Patents

Method of depositing silicon dioxide films

Info

Publication number
GB201207448D0
GB201207448D0 GBGB1207448.0A GB201207448A GB201207448D0 GB 201207448 D0 GB201207448 D0 GB 201207448D0 GB 201207448 A GB201207448 A GB 201207448A GB 201207448 D0 GB201207448 D0 GB 201207448D0
Authority
GB
United Kingdom
Prior art keywords
silicon dioxide
depositing silicon
dioxide films
temperatures
teos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1207448.0A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPTS Technologies Ltd
Original Assignee
SPTS Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPTS Technologies Ltd filed Critical SPTS Technologies Ltd
Priority to GBGB1207448.0A priority Critical patent/GB201207448D0/en
Publication of GB201207448D0 publication Critical patent/GB201207448D0/en
Priority to US13/869,369 priority patent/US9165762B2/en
Priority to EP13165092.1A priority patent/EP2657363B1/en
Priority to JP2013092954A priority patent/JP6290544B2/ja
Priority to TW102114803A priority patent/TWI581334B/zh
Priority to KR1020130046872A priority patent/KR102221064B1/ko
Priority to CN201310150780.3A priority patent/CN103540908A/zh
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
GBGB1207448.0A 2012-04-26 2012-04-26 Method of depositing silicon dioxide films Ceased GB201207448D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB1207448.0A GB201207448D0 (en) 2012-04-26 2012-04-26 Method of depositing silicon dioxide films
US13/869,369 US9165762B2 (en) 2012-04-26 2013-04-24 Method of depositing silicone dioxide films
EP13165092.1A EP2657363B1 (en) 2012-04-26 2013-04-24 Method of depositing silicon dioxide films
JP2013092954A JP6290544B2 (ja) 2012-04-26 2013-04-25 二酸化珪素フィルムを付着させる方法
TW102114803A TWI581334B (zh) 2012-04-26 2013-04-25 沉積二氧化矽膜的方法
KR1020130046872A KR102221064B1 (ko) 2012-04-26 2013-04-26 실리콘 디옥사이드를 증착하는 방법
CN201310150780.3A CN103540908A (zh) 2012-04-26 2013-04-26 沉积二氧化硅薄膜的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1207448.0A GB201207448D0 (en) 2012-04-26 2012-04-26 Method of depositing silicon dioxide films

Publications (1)

Publication Number Publication Date
GB201207448D0 true GB201207448D0 (en) 2012-06-13

Family

ID=46330494

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1207448.0A Ceased GB201207448D0 (en) 2012-04-26 2012-04-26 Method of depositing silicon dioxide films

Country Status (7)

Country Link
US (1) US9165762B2 (https=)
EP (1) EP2657363B1 (https=)
JP (1) JP6290544B2 (https=)
KR (1) KR102221064B1 (https=)
CN (1) CN103540908A (https=)
GB (1) GB201207448D0 (https=)
TW (1) TWI581334B (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015146807A1 (ja) * 2014-03-26 2015-10-01 コニカミノルタ株式会社 ガスバリア性フィルムの製造方法
JP6183965B2 (ja) * 2014-03-27 2017-08-23 Ｓｐｐテクノロジーズ株式会社 シリコン酸化膜及びその製造方法、並びにシリコン酸化膜の製造装置
US9460915B2 (en) * 2014-09-12 2016-10-04 Lam Research Corporation Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges
CN105063576A (zh) * 2015-08-24 2015-11-18 沈阳拓荆科技有限公司 一种采用teos源的低温镀膜方法
GB201522552D0 (en) * 2015-12-21 2016-02-03 Spts Technologies Ltd Method of improving adhesion
US10032868B2 (en) * 2016-09-09 2018-07-24 Texas Instruments Incorporated High performance super-beta NPN (SBNPN)
US10358717B2 (en) * 2017-04-21 2019-07-23 Lam Research Corporation Method for depositing high deposition rate, thick tetraethyl orthosilicate film with low compressive stress, high film stability and low shrinkage
KR102364476B1 (ko) * 2020-05-08 2022-02-18 주식회사 한솔케미칼 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법
CN112342531A (zh) * 2020-10-19 2021-02-09 绍兴同芯成集成电路有限公司 一种利用低频射频电浆制备ild绝缘层的晶圆制造工艺
CN113667964B (zh) * 2021-08-31 2023-01-20 陛通半导体设备(苏州)有限公司 Teos膜的制作方法
CN114000123A (zh) * 2021-11-02 2022-02-01 浙江光特科技有限公司 一种制备SiO2薄膜的方法、芯片及装置
CN115020221A (zh) * 2022-06-10 2022-09-06 广东越海集成技术有限公司 一种二氧化硅及其低温制备方法
GB202213794D0 (en) * 2022-09-21 2022-11-02 Spts Technologies Ltd Deposition of thick layers of silicon dioxide
KR102896684B1 (ko) * 2022-12-16 2025-12-09 주식회사 원익아이피에스 실리콘 산화막 형성 방법
CN116479405A (zh) * 2023-06-08 2023-07-25 上海陛通半导体能源科技股份有限公司 一种12英寸超高均匀性非晶氧化硅薄膜的化学气相沉积方法
CN116804270B (zh) * 2023-08-29 2023-11-10 上海陛通半导体能源科技股份有限公司 二氧化硅薄膜的低温沉积方法及器件制备方法
CN117888080A (zh) * 2024-03-14 2024-04-16 之江实验室 二氧化硅薄膜及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2684942B2 (ja) 1992-11-30 1997-12-03 日本電気株式会社 化学気相成長法と化学気相成長装置および多層配線の製造方法
US5382550A (en) * 1993-08-05 1995-01-17 Micron Semiconductor, Inc. Method of depositing SiO2 on a semiconductor substrate
US6037274A (en) * 1995-02-17 2000-03-14 Fujitsu Limited Method for forming insulating film
JP4476984B2 (ja) * 1995-09-08 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6001728A (en) * 1996-03-15 1999-12-14 Applied Materials, Inc. Method and apparatus for improving film stability of halogen-doped silicon oxide films
US5939831A (en) * 1996-11-13 1999-08-17 Applied Materials, Inc. Methods and apparatus for pre-stabilized plasma generation for microwave clean applications
US6028014A (en) * 1997-11-10 2000-02-22 Lsi Logic Corporation Plasma-enhanced oxide process optimization and material and apparatus therefor
JP4101340B2 (ja) * 1997-12-12 2008-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3184177B2 (ja) * 1999-03-26 2001-07-09 キヤノン販売株式会社 層間絶縁膜の形成方法、半導体製造装置、及び半導体装置
US6565759B1 (en) * 1999-08-16 2003-05-20 Vanguard International Semiconductor Corporation Etching process
US6300219B1 (en) * 1999-08-30 2001-10-09 Micron Technology, Inc. Method of forming trench isolation regions
US7544625B2 (en) * 2003-01-31 2009-06-09 Sharp Laboratories Of America, Inc. Silicon oxide thin-films with embedded nanocrystalline silicon
US7807225B2 (en) * 2003-01-31 2010-10-05 Sharp Laboratories Of America, Inc. High density plasma non-stoichiometric SiOxNy films
US6867086B1 (en) 2003-03-13 2005-03-15 Novellus Systems, Inc. Multi-step deposition and etch back gap fill process
JP2004336019A (ja) * 2003-04-18 2004-11-25 Advanced Lcd Technologies Development Center Co Ltd 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置
US7199061B2 (en) * 2003-04-21 2007-04-03 Applied Materials, Inc. Pecvd silicon oxide thin film deposition
KR100653994B1 (ko) * 2005-03-14 2006-12-05 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성방법
US20110318502A1 (en) * 2009-12-24 2011-12-29 Spp Process Technology Systems Uk Limited Methods of depositing sio2 films
GB0922647D0 (en) * 2009-12-24 2010-02-10 Aviza Technologies Ltd Methods of depositing SiO² films
TWI448576B (zh) * 2010-11-17 2014-08-11 Nanmat Technology Co Ltd 低介電材料及其薄膜之製備方法

Also Published As

Publication number Publication date
EP2657363A1 (en) 2013-10-30
TWI581334B (zh) 2017-05-01
CN103540908A (zh) 2014-01-29
TW201403714A (zh) 2014-01-16
KR102221064B1 (ko) 2021-02-25
JP6290544B2 (ja) 2018-03-07
US9165762B2 (en) 2015-10-20
JP2013229608A (ja) 2013-11-07
KR20130121061A (ko) 2013-11-05
EP2657363B1 (en) 2019-02-20
US20130288486A1 (en) 2013-10-31

Similar Documents

Publication Publication Date Title
GB201207448D0 (en) Method of depositing silicon dioxide films
WO2012024114A3 (en) Methods for forming a hydrogen free silicon containing dielectric film
WO2009149167A3 (en) Low temperature deposition of silicon-containing films
SG11201406391YA (en) Apparatus for growing diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein
TW201614094A (en) Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
WO2013039866A3 (en) Activated silicon precursors for low temperature deposition
WO2012036808A3 (en) Smooth silicon-containing films
TWI563121B (en) Gas distribution showerhead for inductively coupled plasma etch reactor
EP2761054A4 (en) SILICONE OXIDE COATING BY A CHEMICAL STEAM DEPOSITION UNDER NORMAL PRESSURE
MY158420A (en) P-doped silicon layers
EP2668312B8 (en) Vapour etch of silicon dioxide with improved selectivity
PL2817433T3 (pl) Sposób osadzania chemicznego z fazy gazowej w celu nakładania powłoki krzemionkowej na podłoże szklane
SG10201806569PA (en) Pecvd microcrystalline silicon germanium (sige)
WO2012102892A3 (en) Plasma treatment of silicon nitride and silicon oxynitride
TW201614713A (en) Carbon and/or nitrogen incorporation in silicon-based films using silicon precursors with organic co-reactants by pe-ald
WO2013006634A3 (en) Processes and intermediates for producing azaindoles
JP2013229608A5 (https=)
GB201103274D0 (en) Mesoporous silicon
EP2362003A3 (en) Methods of depositing SiO2 films
TWI563556B (en) Apparatus of etching glass substrate
MY170051A (en) Method for depositing layers on a glass substrate by means of low-pressure pecvd
EP2989229A4 (en) Methods for the photo-initiated chemical vapor deposition (picvd) of coatings and coatings produced by these methods
EP2938752A4 (en) PLASMA ACTIVATED CHEMICAL VAPOR DEPOSITION SOURCE (PECVD)
SG11201406275QA (en) Device for depositing a layer on a semiconductor wafer by means of vapour deposition
SG11201404047QA (en) Polishing composition, manufacturing process therefor, process for production of silicon substrate, and silicon substrate

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)