GB2007937B - Solid state image sensors - Google Patents

Solid state image sensors

Info

Publication number
GB2007937B
GB2007937B GB7838523A GB7838523A GB2007937B GB 2007937 B GB2007937 B GB 2007937B GB 7838523 A GB7838523 A GB 7838523A GB 7838523 A GB7838523 A GB 7838523A GB 2007937 B GB2007937 B GB 2007937B
Authority
GB
United Kingdom
Prior art keywords
solid state
state image
image sensors
sensors
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7838523A
Other languages
English (en)
Other versions
GB2007937A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB2007937A publication Critical patent/GB2007937A/en
Application granted granted Critical
Publication of GB2007937B publication Critical patent/GB2007937B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Picture Signal Circuits (AREA)
GB7838523A 1977-09-29 1978-09-28 Solid state image sensors Expired GB2007937B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12688577A JPS5451318A (en) 1977-09-29 1977-09-29 Solid pickup unit

Publications (2)

Publication Number Publication Date
GB2007937A GB2007937A (en) 1979-05-23
GB2007937B true GB2007937B (en) 1982-03-03

Family

ID=14946246

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7838523A Expired GB2007937B (en) 1977-09-29 1978-09-28 Solid state image sensors

Country Status (6)

Country Link
JP (1) JPS5451318A (US07291463-20071106-C00074.png)
CA (1) CA1125421A (US07291463-20071106-C00074.png)
DE (1) DE2842346C2 (US07291463-20071106-C00074.png)
FR (1) FR2409646A1 (US07291463-20071106-C00074.png)
GB (1) GB2007937B (US07291463-20071106-C00074.png)
NL (1) NL7809866A (US07291463-20071106-C00074.png)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151592U (US07291463-20071106-C00074.png) * 1979-04-19 1980-10-31
JPS55163882A (en) * 1979-06-06 1980-12-20 Nec Corp System for driving charge transfer element
JPS55163953A (en) * 1979-06-08 1980-12-20 Nec Corp Ccd shift register
JPS55163956A (en) * 1979-06-08 1980-12-20 Nec Corp Shift register and its driving method
DE2939403A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
JPS5665578A (en) * 1979-10-31 1981-06-03 Fujitsu Ltd Two dimensional solidstate image sensor
JPS5685981A (en) * 1979-12-15 1981-07-13 Sharp Corp Solid image pickup apparatus
JPS56104582A (en) * 1980-01-25 1981-08-20 Toshiba Corp Solid image pickup device
JPS56136086A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Two-dimensional image pickup device
JPS56160081A (en) * 1980-05-14 1981-12-09 Matsushita Electronics Corp Solid state image pickup apparatus
DE3173604D1 (en) * 1981-05-19 1986-03-13 Texas Instruments Inc Infrared imaging system with infrared detector matrix, and method of imaging infrared energy
DE3121494A1 (de) * 1981-05-29 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Anordnung zum beruehrungslosen messen von elektrischen ladungsbildern bei elektroradiographischen aufzeichnungsverfahren
EP0066020B1 (en) * 1981-06-03 1985-10-23 Texas Instruments Incorporated Infrared energy detector system utilizing a charge transfer device sensor
JPS586682A (ja) * 1981-07-06 1983-01-14 Sony Corp 固体撮像装置
JPS5847378A (ja) * 1981-09-17 1983-03-19 Canon Inc 撮像素子
JPS58142570A (ja) * 1982-02-19 1983-08-24 Sony Corp 固体撮像装置
JPS60254770A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd イメージセンサ
JPS61144874A (ja) * 1984-12-19 1986-07-02 Toshiba Corp 電荷転送装置
NL8503243A (nl) * 1985-11-25 1987-06-16 Optische Ind De Oude Delft Nv Beeldopneeminrichting voor digitale radiografie.
JPH07107928B2 (ja) * 1986-03-25 1995-11-15 ソニー株式会社 固体撮像装置
JPH02113678A (ja) * 1988-10-21 1990-04-25 Nec Corp 固体撮像装置
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
US5276520A (en) * 1991-06-07 1994-01-04 Eastman Kodak Company Enhancing exposure latitude of image sensors
FR2687265A1 (fr) * 1993-01-08 1993-08-13 Scanera Sc Dispositif de prise de vue electronique a haute dynamique et procede de prise de vue de scenes tres contrastees.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654115B2 (US07291463-20071106-C00074.png) * 1974-03-29 1981-12-23
US3931465A (en) * 1975-01-13 1976-01-06 Rca Corporation Blooming control for charge coupled imager
JPS5937629B2 (ja) * 1975-01-30 1984-09-11 ソニー株式会社 固体撮像体
US3953733A (en) * 1975-05-21 1976-04-27 Rca Corporation Method of operating imagers
JPS5846905B2 (ja) * 1975-11-10 1983-10-19 ソニー株式会社 コタイサツゾウソウチ
JPS52109825A (en) * 1976-03-11 1977-09-14 Sony Corp Solid state pick up unit

Also Published As

Publication number Publication date
DE2842346C2 (de) 1987-05-14
NL7809866A (nl) 1979-04-02
CA1125421A (en) 1982-06-08
FR2409646B1 (US07291463-20071106-C00074.png) 1983-11-18
FR2409646A1 (fr) 1979-06-15
DE2842346A1 (de) 1979-04-12
GB2007937A (en) 1979-05-23
JPS5451318A (en) 1979-04-23

Similar Documents

Publication Publication Date Title
JPS5487080A (en) Image sensor
JPS549997A (en) Solid state sensor element
GB2007937B (en) Solid state image sensors
GB1556820A (en) Solid state image sensor devices
GB2011840B (en) Image forming device
JPS53120256A (en) Image forming device
GB2062263B (en) Cameras
DE3067899D1 (en) Solid state image sensor
DE3071949D1 (en) Solid state image sensor
JPS5491283A (en) Acceleration sensor
GB2011079B (en) Sensor
GB2006448B (en) Camera
JPS55151751A (en) Picture sensor
GB2010512B (en) Cameras
JPS5454038A (en) Imaging element
JPS5418732A (en) Image formation
JPS5427431A (en) Image forming device
JPS5421856A (en) Image detection element
JPS53117440A (en) Image forming system
AU3280578A (en) Solid state image sensing device
JPS544584A (en) Xxray camera
JPS5484778A (en) Sensor
JPS5439672A (en) Load sensor
JPS5463822A (en) Xxray camera
JPS5474730A (en) Strobeecontained camera

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee