GB1536013A - Data storage memories - Google Patents

Data storage memories

Info

Publication number
GB1536013A
GB1536013A GB6710/76A GB671076A GB1536013A GB 1536013 A GB1536013 A GB 1536013A GB 6710/76 A GB6710/76 A GB 6710/76A GB 671076 A GB671076 A GB 671076A GB 1536013 A GB1536013 A GB 1536013A
Authority
GB
United Kingdom
Prior art keywords
cell
restore
bit lines
phase
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6710/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19752511518 external-priority patent/DE2511518C3/de
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1536013A publication Critical patent/GB1536013A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
GB6710/76A 1975-03-15 1976-02-20 Data storage memories Expired GB1536013A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752511518 DE2511518C3 (de) 1975-03-15 Verfahren und Schaltungsanordnung zum Betreiben eines Halbleiterspeichers

Publications (1)

Publication Number Publication Date
GB1536013A true GB1536013A (en) 1978-12-13

Family

ID=5941550

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6710/76A Expired GB1536013A (en) 1975-03-15 1976-02-20 Data storage memories

Country Status (4)

Country Link
US (1) US4090255A (https=)
JP (1) JPS51114036A (https=)
FR (1) FR2304991A1 (https=)
GB (1) GB1536013A (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2556833C3 (de) * 1975-12-17 1981-11-05 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Betreiben eines Halbleiterspeichers
DE2855866C3 (de) * 1978-12-22 1981-10-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers
DE2926094A1 (de) * 1979-06-28 1981-01-08 Ibm Deutschland Verfahren und schaltungsanordnung zum entladen von bitleitungskapazitaeten eines integrierten halbleiterspeichers
DE2926050C2 (de) * 1979-06-28 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik
DE2929384C2 (de) * 1979-07-20 1981-07-30 Ibm Deutschland Gmbh, 7000 Stuttgart Nachladeschaltung für einen Halbleiterspeicher
DE2943565C2 (de) * 1979-10-29 1981-11-12 Ibm Deutschland Gmbh, 7000 Stuttgart Speicherzellennachbildung zur Referenzspannungserzeugung für Halbleiterspeicher in MTL-Technik
FR2469049A1 (fr) * 1979-10-30 1981-05-08 Ibm France Circuit comportant au moins deux dispositifs semi-conducteurs en technologie mtl presentant des temps de montee differents et circuits logiques en derivant
DE2944141A1 (de) * 1979-11-02 1981-05-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte speicheranordnung
DE2951945A1 (de) * 1979-12-22 1981-07-02 Ibm Deutschland Gmbh, 7000 Stuttgart Schaltungsanordnung zur kapazitiven lesesignalverstaerkung in einem integrierten halbleiterspeicher mit einem intergrierten halbleiterspeicher mit speicherzellen in mtl-technik
US4302823A (en) * 1979-12-27 1981-11-24 International Business Machines Corp. Differential charge sensing system
JPS594787B2 (ja) * 1979-12-28 1984-01-31 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション 低インピ−ダンス感知増幅器を有し読取専用メモリ及び読取一書込メモリに共用可能なメモリ装置
US4404662A (en) * 1981-07-06 1983-09-13 International Business Machines Corporation Method and circuit for accessing an integrated semiconductor memory
US4555776A (en) * 1982-04-19 1985-11-26 International Business Machines Corporation Voltage balancing circuit for memory systems
US4791613A (en) * 1983-09-21 1988-12-13 Inmos Corporation Bit line and column circuitry used in a semiconductor memory
DE3480443D1 (en) * 1984-05-14 1989-12-14 Ibm Deutschland Semiconductor memory
US4596002A (en) * 1984-06-25 1986-06-17 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4598390A (en) * 1984-06-25 1986-07-01 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4578779A (en) * 1984-06-25 1986-03-25 International Business Machines Corporation Voltage mode operation scheme for bipolar arrays
US4635228A (en) * 1984-12-17 1987-01-06 International Business Machines Corporation Random access memory employing unclamped complementary transistor switch (CTS) memory cells and utilizing word to drain line diode shunts
US4922455A (en) * 1987-09-08 1990-05-01 International Business Machines Corporation Memory cell with active device for saturation capacitance discharge prior to writing
US5200924A (en) * 1989-03-30 1993-04-06 Synergy Semiconductor Corporation Bit line discharge and sense circuit
US4991138A (en) * 1989-04-03 1991-02-05 International Business Machines Corporation High speed memory cell with multiple port capability
EP0426597B1 (en) * 1989-10-30 1995-11-08 International Business Machines Corporation Bit decode scheme for memory arrays

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3067336A (en) * 1957-05-03 1962-12-04 Honeywell Regulator Co Bistable electronic switching circuitry for manipulating digital data
US3177374A (en) * 1961-03-10 1965-04-06 Philco Corp Binary data transfer circuit
US3292008A (en) * 1963-12-03 1966-12-13 Rca Corp Switching circuit having low standby power dissipation
US3363115A (en) * 1965-03-29 1968-01-09 Gen Micro Electronics Inc Integral counting circuit with storage capacitors in the conductive path of steering gate circuits
US3447137A (en) * 1965-05-13 1969-05-27 Bunker Ramo Digital memory apparatus
US3284782A (en) * 1966-02-16 1966-11-08 Rca Corp Memory storage system
US3518635A (en) * 1967-08-22 1970-06-30 Bunker Ramo Digital memory apparatus
DE1524873B2 (de) * 1967-10-05 1970-12-23 Ibm Deutschland Monolithische integrierte Speicherzelle mit kleiner Ruheleistung
US3540010A (en) * 1968-08-27 1970-11-10 Bell Telephone Labor Inc Diode-coupled semiconductive memory
US3588848A (en) * 1969-08-04 1971-06-28 Us Army Input-output control circuit for memory circuit
US3806898A (en) * 1973-06-29 1974-04-23 Ibm Regeneration of dynamic monolithic memories
DE2457921C2 (de) * 1974-12-07 1976-12-09 Ibm Deutschland Verfahren und schaltungsanordnung zur erhoehung der schreibgeschwindigkeit in integrierten datenspeichern

Also Published As

Publication number Publication date
FR2304991A1 (fr) 1976-10-15
JPS5751191B2 (https=) 1982-10-30
US4090255A (en) 1978-05-16
DE2511518A1 (de) 1976-09-16
JPS51114036A (en) 1976-10-07
DE2511518B2 (de) 1976-12-30
FR2304991B1 (https=) 1979-04-06

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee